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6.2009 .2009 6.2009 .2009 On On On On On On On On CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit 29.06 29.06 29.0 29.0 Reliability Reliability Reliability

  1. 6.2009 .2009 6.2009 .2009 On On On On On On On On CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit CMOS Circuit 29.06 29.06 29.0 29.0 Reliability Reliability Reliability Reliability Reliability Reliability Reliability Reliability liability liability liability liability liability liability liability liability al • ugal al ugal tug tug l, Port l, Port il, Por il, Por from from from from Estori Estori Estor Estor T The The he he • • • N’09 • N’09 N’09 N’09 MOSFETs MOSFET MOSFETs MOSFET MOSFETs MOSFET MOSFETs MOSFET SN/DS SN/DS SN/DS SN/DS and the and the and the and the Inp Input V Inp Input V ut Vectors ut Vectors ctors ctors WD WD WD WD Valeriu Beiu Beiu Beiu Beiu and and and and Walid Ibr Wa Walid I alid Ibrahim Ibrahim him Va Valeriu Va

  2. 6.2009 6.2009 .2009 .2009 Structure o Structure o tructure of the tructure of the f f f f the presentation the presentation p p p p resentation resentation 29.06 29.06 29.0 29.0 � Classical view Classical view � Ubiquitous … variations Ubiquitous … variations al • ugal al ugal Thermal Thermal tug tug � l, Port l, Port Leakage Leakage il, Por il, Por � Vdd Vdd � Estori Estori Estor Estor Fabrication … Fabrication … � � Detailed (atomistic) view Detailed (atomistic) view ( ( ) ) • • • N’09 • � Vth variations Vth variations N’09 N’09 N’09 � Gate � Gate Gate level simulations Gate-level simulations level simulations level simulations SN/DS SN/DS SN/DS SN/DS � Conclusions Conclusions WD WD WD WD 2

  3. 6.2009 .2009 .2009 6.2009 Classical view Classical view Classical view Classical view 29.06 29.06 29.0 29.0 al • ugal ugal al tug tug 90 90 65 65 DRAM ½ pitch DRAM ½ pitch 45 45 32 32 22 22 l, Port l, Port il, Por il, Por 130 130 90 90 65 65 45 45 32 32 22 22 16 16 Logic Generation Logic Generation 100nm 100nm Estori Estori Estor Estor 75nm 75nm New material New material • • • N’09 • for strained for strained- -Si Si Cutline B- Cutline B -B’ B’ N’09 N’09 N’09 50nm 50nm HfSiON HfSiON High- High -k k S G S S Si Si Si Si D G G D D Metal gate Metal gate Metal gate Metal gate BOX BOX BOX BOX SN/DS SN/DS SN/DS SN/DS Double gate Double gate 25nm 25nm 3D FinFET 3D FinFET WD WD WD WD 0 ‘20 ‘20 ‘00 ‘00 ‘05 ‘05 ‘10 ‘10 ‘15 ‘15 From Samsung From Samsung 3

  4. WD WD WD WD SN/DS SN/DS SN/DS SN/DS N’09 • N’09 N’09 N’09 • • • Estori Estor Estori Estor il, Por il, Por l, Port l, Port tug tug ugal ugal al • al 29.06 29.0 29.06 29.0 6.2009 6.2009 .2009 .2009 Variations … thermal Variations … thermal ariations … thermal ariations … thermal 4

  5. WD WD WD WD SN/DS SN/DS SN/DS SN/DS N’09 • N’09 N’09 N’09 • • • Estori Estor Estori Estor il, Por il, Por l, Port l, Port tug tug ugal ugal al • al 29.06 29.0 29.06 29.0 6.2009 6.2009 .2009 .2009 Variations … leaka Variations … leaka ariations … leakage ariations … leakage g 5

  6. WD WD WD WD SN/DS SN/DS SN/DS SN/DS N’09 • N’09 N’09 N’09 • • • Estori Estor Estori Estor il, Por il, Por l, Port l, Port tug tug ugal ugal al • al 29.06 29.0 29.06 29.0 6.2009 6.2009 .2009 .2009 Variations … Vdd Variations … Vdd ariations … Vdd ariations … Vdd 6

  7. 6.2009 6.2009 .2009 .2009 Vdd noise (Itanium, 90nm) Vdd noise (Itanium, 90nm) dd noise (Itanium, 90nm) dd noise (Itanium, 90nm) 29.06 29.06 29.0 29.0 al • ugal ugal al tug tug l, Port l, Port il, Por il, Por Estori Estori Estor Estor N’09 • • • • N’09 N’09 N’09 SN/DS SN/DS SN/DS SN/DS WD WD WD WD S. Naffziger, B. Stackhouse, T. Grutkowski, D. Josephson, J. Desai, E. Alon, and M. Horowitz The Implementation of a 2-Core, Multi-Threaded Itanium Family Processor, J. Solid-State Circ. , Jan. 2006 7

  8. 6.2009 6.2009 .2009 .2009 Variations … when Variations … when ariations … when fabricatin ariations … when fabricatin f f f f abricating abricating g g g g 29.06 29.06 29.0 29.0 al • ugal al ugal tug tug l, Port l, Port il, Por il, Por Estori Estori Estor Estor • • • N’09 • N’09 N’09 N’09 SN/DS SN/DS SN/DS SN/DS WD WD WD WD S. Nassif, DAC’03 S. Nassif, DAC’03 8

  9. WD WD WD WD SN/DS SN/DS SN/DS SN/DS N’09 N’09 • N’09 N’09 • • • Estor Estori Estor Estori il, Por il, Por l, Port l, Port tug tug ugal ugal al al • 29.06 29.0 29.06 29.0 6.2009 6.2009 .2009 .2009 Variations … mis Variations … mis ariations … misplacin ariations … misplacin p p p p lacing atoms lacing atoms g g g g atoms atoms 9

  10. WD WD WD WD SN/DS SN/DS SN/DS SN/DS N’09 N’09 • N’09 N’09 • • • Estor Estor Estori Estori il, Por il, Por l, Port l, Port tug tug ugal ugal al • al 29.06 29.0 29.06 29.0 6.2009 6.2009 .2009 .2009 Detailed view (atomistic) Detailed view (atomistic) etailed view (atomistic) etailed view (atomistic) 35nm 35nm 22 22 22nm 22nm 4.2nm 4.2nm 10 10

  11. e – … 6.2009 .2009 6.2009 .2009 Countin Counting e Countin Counting e g e 29.06 29.06 29.0 29.0 al • ugal al ugal tug tug l, Port l, Port il, Por il, Por Estori Estori Estor Estor N’09 • • • • N’09 N’09 N’09 SN/DS SN/DS SN/DS SN/DS WD WD WD WD E. Pop: Movie of an 18nm ultra E. Pop: Movie of an 18nm ultra- -thin body SOI, MONET & Medici (energy in thin body SOI, MONET & Medici (energy in eV eV on the right bar) on the right bar) 11 11

  12. 6.2009 .2009 .2009 6.2009 Vth variations Vth variations th variations th variations 29.06 29.06 29.0 29.0 � Keyes Keyes 1975 1975 � Hagigava et al. Hagigava et al. 1982 1982 al • al ugal ugal tug tug � Wong & Taur Wong & Taur g 1993 1993 l, Port l, Port il, Por il, Por � Mizuno et al. Mizuno et al. 1994 1994 � Wong et al � Wong et al. Wong et al Wong et al. 1998 1998 1998 1998 Estori Estori Estor Estor � Asenov Asenov 1998 1998 • • • N’09 • N’09 N’09 N’09 � Random dopants, oxide thickness variations, line Random dopants, oxide thickness variations, line edge roughness, polysilicon granularity, interface edge roughness, polysilicon granularity, interface SN/DS SN/DS SN/DS SN/DS roughness, high roughness, high- - k morphology morphology 0.45 / ( WD WD WD WD � σ = = t ox ox N A / ( L eff eff W eff eff ) 1/2 0.45 1/2 12 12

  13. WD WD WD WD SN/DS SN/DS SN/DS SN/DS N’09 N’09 • N’09 N’09 • • • Estori Estor Estor Estori il, Por il, Por l, Port l, Port tug tug ugal ugal al al • 29.06 29.0 29.06 29.0 6.2009 6.2009 .2009 .2009 group group group group Asenov’s A Asenov’s fro fro fro fro fro from fro from results results results results Latest Latest atest atest senov’s senov’s 13 13

  14. WD WD WD WD SN/DS SN/DS SN/DS SN/DS N’09 • N’09 N’09 N’09 • • • Estor Estori Estor Estori il, Por il, Por l, Port l, Port tug tug ugal ugal al al • 29.06 29.0 29.06 29.0 6.2009 6.2009 .2009 .2009 gates g gates to to to to to to to to MOS MOS From From From From ates ates OS OS 14 14

  15. 6.2009 6.2009 .2009 .2009 Devices Devices evices evices get into get into et into et into 29.06 29.06 29.0 29.0 the the the pi the pi the pi ture the the the pi ture picture picture ture ture ure ure al • ugal al ugal tug tug l, Port l, Port il, Por il, Por Estori Estori Estor Estor N’09 • • • • N’09 N’09 N’09 SN/DS SN/DS SN/DS SN/DS WD WD WD WD V. Beiu V. Beiu et al. et al. , , IWANN’07 IWANN’07 , 2007 , 2007 15 15

  16. WD WD WD WD SN/DS SN/DS SN/DS SN/DS N’09 N’09 • N’09 N’09 • • • Estor Estori Estor Estori il, Por il, Por l, Port l, Port tug tug ugal ugal al al • 29.06 29.0 29.06 29.0 6.2009 6.2009 .2009 .2009 Probabilit Probabilit robability densit robability densit y y y y density functions density functions y f y y f y unctions unctions 16 16

  17. WD WD WD WD SN/DS SN/DS SN/DS SN/DS N’09 • N’09 N’09 N’09 • • • Estori Estor Estori Estor il, Por il, Por l, Port l, Port tug tug ugal ugal al • al 29.06 29.0 29.06 29.0 6.2009 6.2009 .2009 .2009 nMOS … Vth at Vdd/2, /3, /4 nMOS … Vth at Vdd/2, /3, /4 MOS … Vth at Vdd/2, /3, /4 MOS … Vth at Vdd/2, /3, /4 17 17

  18. 6.2009 .2009 6.2009 .2009 Inverter (noise at Vdd/3, /4, /5 …) Inverter (noise at Vdd/3, /4, /5 …) nverter (noise at Vdd/3, /4, /5 …) nverter (noise at Vdd/3, /4, /5 …) 29.06 29.06 29.0 29.0 0 10 al • ugal al ugal tug tug re l, Port l, Port y of failur il, Por il, Por − 5 10 Estori Estori robability Estor Estor N’09 • • • • INV Pr − 10 10 N’09 N’09 N’09 SN/DS SN/DS SN/DS SN/DS − 15 15 10 10 WD WD WD WD 0 5 10 15 20 25 30 35 40 45 Feature size [nm] 18 18

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