Recombination parameter J 0 PVMD René van Swaaij Delft University of Technology
Learning objectives • How is V oc related to saturation current density, J 0 , and minority carrier lifetime? • Relation between J 0 and recombination
Recombination and V oc E Fn Fn eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn For: eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn For: eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn For: eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn For: eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn eV eV oc oc E Fp Fp
Recombination and V oc E Fn Fn eV eV oc oc E Fp Fp V oc depends on recombination rate
Three recombination processes Shockley- Radiative Auger Read-Hall - - - - - - + + +
Surface recombination conduction band E C tr trap states E V valence band x x = = 0, , surface
Total recombination rate p -type 0 W
Total recombination rate p -type 0 W
Total recombination rate p -type 0 W
Generation and recombination in thermal equilibrium • Thermal generation equals thermal recombination - - + +
Generation and recombination in thermal equilibrium • Thermal generation equals thermal recombination for any mechanism - - + +
Recombination rates in thermal equilibrium Radiative Auger SRH Surface
Recombination rates in thermal equilibrium Radiative Auger SRH Surface
Recombination parameter J 0 Radiative Auger SRH Surface
Recombination parameter J 0 Radiative Auger SRH Surface
Recombination parameter J 0 Radiative Auger SRH Surface
Recombination parameter J 0 Radiative Auger SRH Surface
Application J 0 in analysis Ag Ag n + SiN x p-type sc Si p ++ p ++ Al c-Si (200 – 300 μ m)
Application J 0 in analysis Ag Ag n + SiN x J 0,d p-type sc Si p ++ p ++ Al c-Si (200 – 300 μ m)
Application J 0 in analysis Ag Ag n + SiN x J 0,d J 0,Auger J 0,SR SRH p-type sc Si p ++ p ++ Al c-Si (200 – 300 μ m)
Application J 0 in analysis Ag Ag J 0,s,fron ont n + SiN x J 0,d J 0,Auger J 0,SR SRH p-type sc Si p ++ p ++ Al c-Si (200 – 300 μ m)
Summary • V oc is related to saturation current density J 0
Summary • V oc is related to saturation current density J 0 • V oc is related to lifetime recombination processes
Summary • V oc is related to saturation current density J 0 • V oc is related to lifetime recombination processes • Recombination processes can be expressed in J 0
Recommend
More recommend