characterization of cdte cdznte and gaas detectors
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Characterization of CdTe, CdZnTe and GaAs detectors Igor A. Sokolov Igor A. Sokolov NDIP 2008 1 Non-steady-state photoEMF LASER Phase modulator Signal Selective generator amplifier CdTe R L 2 m k T i K =


  1. Characterization of CdTe, CdZnTe and GaAs detectors Igor A. Sokolov Igor A. Sokolov NDIP 2008 1

  2. Non-steady-state photoEMF LASER Phase modulator Signal Selective generator amplifier CdTe R L − ω ω Δ 2 m k T i K ω = σ 0 B J + + ω ω 0 2 2 2 1 e 1 K L i 0 D NDIP 2008 2

  3. Frequency transfer function 12 3 CdZnTe, CdTe, 10 λ =1.15 μ m λ =1.15 μ m 8 2 ω |, pA ω |, pA 6 |J |J 1 4 2 0 0 0 500 1000 1500 2000 0 500 1000 1500 2000 ω /2 π , Hz ω /2 π , Hz Non-steady-state photo-EMF measured in CdTe and CdZnTe for different light =3.0, 5.7, 11, 18, 24 mW/cm 2 . K=5.5 × 10 4 m -1 , m=0.73. intensities:I 0 NDIP 2008 3

  4. References 1. M.A. Bryushinin and I.A. Sokolov, Phys. Rev. B 62 , 7186 (2000). 2. M.A. Bryushinin and I.A. Sokolov, Phys. Rev. B 63 , 153203 (2001). 3. M. Bryushinin, V. Kulikov, and I. Sokolov, Phys. Rev. B 65 , 245204 (2002). 4. M. Bryushinin, V. Kulikov, and I. Sokolov, Phys. Rev. B 67 , 075202 (2003). 5. I.A. Sokolov, Nucl. Instr. Meth. Phys. Res. A 504 , 196 (2003). 6. M. Bryushinin, V. Kulikov, and I. Sokolov, Phys. Rev. B 71 , 165208 (2005). NDIP 2008 4

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