Heterostructures Heterojunction: e.g. between GaAs (W g ~1.4 eV) - PowerPoint PPT Presentation

Apr 02, 2024 •347 likes •454 views

Heterostructures Heterojunction: e.g. between GaAs (W g ~1.4 eV) and AlGaAs (W g ~1.6-1.9 eV) HBT Heterojunction bipolar tr: - very fast (highly doped base!) - e.g. with AlGaAs and GaAs HBT or with SiGe - more current - faster -

Heterostructures
Heterojunction: e.g. between GaAs (W g ~1.4 eV) and AlGaAs (W g ~1.6-1.9 eV)
HBT � Heterojunction bipolar tr: - very fast (highly doped base!) - e.g. with AlGaAs and GaAs
HBT � …or with SiGe - more current - faster - higher V A
HEMT � High electron mobility tr. (HEMT, or MODFET): fast (electrons don’t move close to the surface, and are in a undoped region)
� FET: performance comparison:
[2015]

Recommend

Nanomorphology controls in colloidal nanocrystal polymer bulk heterojunction solar

Nanomorphology controls in colloidal nanocrystal polymer bulk heterojunction solar nanocrystal polymer bulk heterojunction solar cells based on non-toxic inorganic acceptors and functional block copolymers functional block copolymers

220 views • 10 slides

Scanning probe lithography on semiconductor heterostructures: Technology and scientific

Scanning probe lithography on semiconductor heterostructures: Technology and scientific applications Thomas Heinzel Heinrich-Heine-Universitt Dsseldorf Motivation and technology Options offered Some application examples 1

466 views • 19 slides

Proximity effects on topological surface: TI/FM heterostructures Ilya Eremin Theoretische

Proximity effects on topological surface: TI/FM heterostructures Ilya Eremin Theoretische Physik III, Ruhr-Uni Bochum NQS Workshop Kyoto, 20.11.2017 Collaborators: Flavio S. Nogueira Jagadeesh Moodera Ferhat Katmis IFW Dresden & RUB

2.64k views • 33 slides

Electrically tunable trion-polaritons in MoSe 2 heterostructures V. Kondratyev 1 , E.Khestanova 1 ,

Electrically tunable trion-polaritons in MoSe 2 heterostructures V. Kondratyev 1 , E.Khestanova 1 , V. Kravtsov 1 ,T.Ivanova 1 ,F.Benimetskiy 1 , A.Samusev 1 ,I. Iorsh 1 1 Department of Physics and Engineering, ITMO University, St.

68 views • 5 slides

Graphene heterostructures: electronic properties and potential applications Leonid Ponomarenko

Graphene heterostructures: electronic properties and potential applications Leonid Ponomarenko School on Anomalous Transport, Superconductivity and Magnetism in Nanosystems BITP , 15 - 20 June 2015, Kiev, Ukraine Graphene Graphite: strong

930 views • 54 slides

Silicon Heterojunction Solar Cells Screen-printing: PECVD: intrinsic Ag front electrode PECVD: p

W INDOW L AYERS FOR S ILICON H ETEROJUNCTION S OLAR C ELLS : Properties and Impact on Device Performance Johannes P. Seif UNSW, Sydney / SPREE Seminar 01.05.2019 Silicon Heterojunction Solar Cells Screen-printing: PECVD: intrinsic Ag front

858 views • 42 slides

Charge transport and recombination in bulk-heterojunction solar cells Ronald sterbacka

Charge transport and recombination in bulk-heterojunction solar cells Ronald sterbacka Department of Physics and Center for Functional Materials bo Akademi University http://www.funmat.fi Finnish-Japanese Workshop on Functional Materials,

278 views • 26 slides

Negative Magnetoresistance in High-Mobility Heterostructures Rolf J. Haug Abteilung

Negative Magnetoresistance in High-Mobility Heterostructures Rolf J. Haug Abteilung Nanostrukturen Institut fr Festkrperphysik Gottfried Wilhelm Leibniz Universitt Hannover nanostrukturen uni hannover Dr. Lina Bockhorn Dr. Eddy

1.79k views • 27 slides

To establish compliance of NGAs with the GAD Budget Policy per GAAs To ascertain whether

3/8/11 GAD Budget Advocacy Forum 1 March 2011 To establish compliance of NGAs with the GAD Budget Policy per GAAs To ascertain whether the objectives of the lawsupport for gender mainstreaming and for ensuring that women benefit

1.6k views • 9 slides

S terling College Required Communication Unqualified opinion GAAS and GAS

PRES ENTATION OF JUNE 30, 2015 AUDITED FINANCIAL S TATEMENTS October 16, 2015 S terling College Required Communication Unqualified opinion GAAS and GAS reasonable but not absolute assurance S ignificant accounting

441 views • 13 slides

EEE23 Low Cost and High Efficiency Si/TMO Heterojunction Solar cell Loh Zhang Chao, Xavier | Lim

EEE23 Low Cost and High Efficiency Si/TMO Heterojunction Solar cell Loh Zhang Chao, Xavier | Lim Hua En Dr Rusli | Dr Ari Bimo Prakoso 1. Rationale behind our research Why we decided to embark on this research 3 Traditional Solar Cells

1.18k views • 26 slides

Photoluminescence Investigation of Bulk GaAsBi on GaAs A. R. Mohmad, F. Bastiman, J. S.

Photoluminescence Investigation of Bulk GaAsBi on GaAs A. R. Mohmad, F. Bastiman, J. S. Ng, J. P. R. David University of Sheffield, UK S. Jin, S. J. Sweeney University of Surrey, UK 2 Outline Introduction Wafer Details

143 views • 12 slides

Non-Uniform Degradation Behavior Across Device Width in RF Power GaAs PHEMTs A. A. Villanueva 1 ,

Non-Uniform Degradation Behavior Across Device Width in RF Power GaAs PHEMTs A. A. Villanueva 1 , J. A. del Alamo 1 , T. Hisaka 2 , K. Hayashi 2 and M. Somerville 3 1 Massachusetts Institute of Technology 2 Mitsubishi Electric 3 Olin College of

462 views • 21 slides

Molecular Dynamics Simulations of Displacement Cascades in GaAs Stephen M. Foiles Computational

Molecular Dynamics Simulations of Displacement Cascades in GaAs Stephen M. Foiles Computational Materials Science and Engineering Dept. Sandia National Laboratories Albuquerque, NM, USA Presented at Session 2: Computational Methods and

396 views • 14 slides

Scintillation detector based on InAs quantum dots in a GaAs semiconductor matrix for charged

Scintillation detector based on InAs quantum dots in a GaAs semiconductor matrix for charged particle tracking or can one build a tracker out of scintillating wafers ? S.Oktyabrsky 1 , M.Yakimov 1 , V.Tokranov 1 , K.Dropiewsky 1 , A.Minns 1 ,

491 views • 18 slides

Scintillating GaAs for the Detection of Electron Recoils from Dark Matter in the MeV Mass Range

Scintillating GaAs for the Detection of Electron Recoils from Dark Matter in the MeV Mass Range Stephen E. Derenzo Lawrence Berkeley National Laboratory New Directions in the Search for Light Dark Matter Particles Fermilab, June 4-7, 2019 1

307 views • 19 slides

GaaS Workload Characterization under NUMA Architecture for Virtualized GPU Huixiang Chen, Meng

GaaS Workload Characterization under NUMA Architecture for Virtualized GPU Huixiang Chen, Meng Wang, Yang Hu, Mingcong Song, Tao Li Presented by Huixiang Chen ISPASS 2017 April 24, 2017, Santa Rosa, California IDEAL (Intelligent Design of

276 views • 27 slides

Long Wavelength Metamorphic InGaAs Detectors on GaAs Substrates I. Adesida, J. H. Jang, J. W.

Micro and Nanotechnology Lab University of Illinois at Urbana-Champaign Long Wavelength Metamorphic InGaAs Detectors on GaAs Substrates I. Adesida, J. H. Jang, J. W. Bae, S. Kim Micro and Nanotechnology Laboratory Department of Electrical and

636 views • 34 slides

Temperature Dependent Hole Mobility in MBE grown GaAs 1 x Bi x D.A. Beaton, R.B. Lewis, M.

Temperature Dependent Hole Mobility in MBE grown GaAs 1 x Bi x D.A. Beaton, R.B. Lewis, M. Masnadi-Shirazi and T. Tiedje dan.beaton@gmail.com Univ. of British Columbia, Vancouver, Canada Univ. of Victoria, Vancouver, Canada Sample growth

310 views • 13 slides

Odd frequency pairing in q y p g superconducting heterostructures p g Alexander Golubov

Odd frequency pairing in q y p g superconducting heterostructures p g Alexander Golubov Twente University, The Netherlands Twente University The Netherlands Y. Tanaka Nagoya University Japan Nagoya University, Japan Y. Asano Hokkaido

359 views • 34 slides

Characterization of CdTe, CdZnTe and GaAs detectors Igor A. Sokolov Igor A. Sokolov NDIP 2008

Characterization of CdTe, CdZnTe and GaAs detectors Igor A. Sokolov Igor A. Sokolov NDIP 2008 1 Non-steady-state photoEMF LASER Phase modulator Signal Selective generator amplifier CdTe R L 2 m k T i K =

176 views • 4 slides

PVMD Ren van Swaaij Delft University of Technology Learning objectives Why use a

Heterojunctions PVMD Ren van Swaaij Delft University of Technology Learning objectives Why use a heterojunction? 2 Learning objectives Why use a heterojunction? Types of heterojunctions 3 Learning objectives Why use a

914 views • 63 slides

Unusual compositional dependence of the Unusual compositional dependence of the exciton reduced

Unusual compositional dependence of the Unusual compositional dependence of the exciton reduced mass exciton reduced mass it it d d d d in GaAs 1 x Bi x ( x =0 10%) in GaAs 1 x Bi x ( x =0 10%) x ( x ( ) ) 1 x 1 x G Pettinari

762 views • 33 slides

NANOMEDICINE AND DRUG DELIVERY SYSTEMS (NANO-MEDIC) NANO-MEDIC-P-01 Sukanya Kreeinthong

NANOMATERIALS (NANO-MATS) NANO-MATS-P-01 Maetee Kunrugsa Type-II GaSb/GaAs nanostructures grown by droplet epitaxy with various Ga amounts Pongbordin Ukahapunyakul Heterostructure of ZnO Nanowire Arrays on Ag thin film prepared by RF Magnetron

322 views • 4 slides