Oerlikon PVD production solution for in-situ large scale deposition - - PowerPoint PPT Presentation

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Oerlikon PVD production solution for in-situ large scale deposition of PZT 2nd International Workshop on Piezoelectric MEMS Materials - Processes - Tools - Devices Lausanne, 06./07.09.2011 M. . Kr Kratzer er , L. Castaldi and B. Heinz

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SLIDE 1

Oerlikon PVD production solution for in-situ large scale deposition of PZT

2nd International Workshop on Piezoelectric MEMS Materials - Processes - Tools - Devices Lausanne, 06./07.09.2011 M. . Kr Kratzer er, L. Castaldi and B. Heinz Oerlikon Systems R&D, Liechtenstein

  • D. Kaden, H.J. Quenzer

Fraunhofer ISIT, Germany

  • A. Mazzalai, S. Harada, P. Muralt

EPFL, Switzerland

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SLIDE 2

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

§ piezoVo

  • Volume pro

roject t § Sputter e er equipment nt § Key hardware are fac actors

  • rs

§ Results s of in-situ PZT T deposition process cess § Summ mmar ary and nd out utlook

  • k

Agenda

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SLIDE 3

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

High quality PZT films on 8” substrates § Dielectric constant ~ 1200 and dielectric loss tanδ < 0.03 § Piezoelectric coefficients d33,f > 100pm/V and - e31,f > 14 C/m2 § Thickness uniformity < ± 5% at max. thickness 4 - 5 µm § Throughput > 3.6 wafer/hr·µm (= 1nm/s) Goal of this cooperation is to develop in-situ tu PZT processes on a Oerlikon sputter system which meet commercial production requirements Ov Overvi view ew Pro roject ect go goals ls Devel elopment of a aut utomated high h vo volume e sp sputt tter system em

  • M. Kratzer, L. Castaldi and B. Heinz

Pro roce cess ss devel elopment nt

  • A. Mazzalai, S. Harada and P. Muralt

Pro roce cess ss devel elopment nt

  • D. Kaden and H.J. Quenzer
  • F. Tyholdt - 14:00

FP7 piezoVolume

EU projec ect “pi piezoVolume” e” Sputt tter coo

  • operation and go

goals ls

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SLIDE 4

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

RF sputte ter mod module e e equipp pped with h 8” Very Hot t Chuck ck CLN20 200 sputte ter tool

  • ol

Loadlocks Robot handling

Support stations Aligner (A) Degasser (D) Cooler (C)

A C D

Equip ipment for PZT in-s

  • situ sputt

ttering ng RF magnetron sputt ttering from single ce ceramic target et

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SLIDE 5

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

RF ca cath thode de Anode & Shi hieldings gs Hea eated chu huck ck

PZT sputter equipment

RF B Bias & & mast ster oscill illator

  • r

Ma Magnet arr rray & Targ rget et

Key hardware facto tors rs Overview ew

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SLIDE 6

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

8” Very Hot t Chuck ck 6” Very Hot t Chuck ck

Temperature sense wafer vs. Heater set point

(6" and 8" Very Hot Chuck)

350 400 450 500 550 600 650 450 500 550 600 650 700 750 800 850

Heater set point [°C] Temperature_sense wafer [°C]

6" wafer 8" wafer

Operational range

Key hardware facto tors rs Very Hot

  • t Chu

huck ck

Heated substrate holder for 6” and 8” wafer enable deposition process in the temperature range needed for in-situ sputtered PZT films

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SLIDE 7

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

8” Very Hot t Chuck ck

Measurement Statistics Uniformity 2.44% Mean 430.76 [°C] Range 10.50 [°C] Max 434.70 [°C] Min 424.20 [°C]

  • 100
  • 80
  • 60
  • 40
  • 20

20 40 60 80 100

  • 100
  • 80
  • 60
  • 40
  • 20

20 40 60 80 100

Uniformity (Temperatur)

x [mm] y [mm]

458.0-460.0 456.0-458.0 454.0-456.0 452.0-454.0 450.0-452.0 448.0-450.0 446.0-448.0 444.0-446.0 442.0-444.0 440.0-442.0 438.0-440.0 436.0-438.0 434.0-436.0 432.0-434.0 430.0-432.0 428.0-430.0 426.0-428.0 424.0-426.0 422.0-424.0 420.0-422.0

Key hardware facto tors rs Temperature un uniformity 8” Very Hot

  • t Chu

huck ck

Temperature uniformity

Optimization of process settings to achieve highest wafer temperatures and excellent temperature uniformity by § Back gas flow § ID / OD heating (Alpha factor)

Chuck temperature: 600°C Backside gas: 4 sccm Wafer temperature: 430 °C

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SLIDE 8

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com
  • 300
  • 250
  • 200
  • 150
  • 100
  • 50

10 20 30 40 50 60 70 80 90 100 110

Ar flow [sccm] Target self bias voltage [V]

1 kW 2 kW 3 kW

USB

SB = U

UA - U

  • UB

UB = U UPlasma

ma

UA / U UB = ( (Area eaB / Area eaA)n

Plasma

A B dA UA dB UB USB CS RF C UPlasma UA USB UB

Cathode area ~ Anode area ea Cathode area < Anode area ea

Key hardware facto tors rs RF target self bi bias voltage ge

Target self bias voltage influenced by § Process pressure § RF power § Anode area

  • 1. RF

F power er

  • 2. Anode a

e area ea

  • 300
  • 250
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10 20 30 40 50 60 70 80 90 100 110

Ar flow [sccm] Target self bias voltage [V]

Higher anode area Lower anode area

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SLIDE 9

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

0.97 0.98 0.99 1.00 1.01 1.02 1.03 Composition (normalized) Pb/(Zr+Ti) 1.000 1.004 Zr/(Zr+Ti) 1.000 0.989 620°C, ID 620°C, OD

Key hardware facto tors rs Magnetron design gn

PZT thickness and composition uniformity influenced by § Erosion profile § Emission characteristic of sputtered atoms § Scattering (~ pressure · distance) § Substrate temperature Actual sputter performance § Deposition rate > 40 nm/min § Estimated target life time ~ 1600 µm film thickness for 4mm target

Thickness uniformity of PZT films on Pt substrates

0.85 0.90 0.95 1.00 1.05 1.10 1.15 10 20 30 40 50 60 70 80 90 100

Radius [mm] Uniformity

Standard Improved

Thickne ness un uniform

  • rmity

ty Composition un uniformity y

OD ID

§ Standard setup § Improved setup

Normalized thickness

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SLIDE 10

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

In In-s

  • situ PZT deposition proce

cess ss General trends ds

Relative Pb content can be influenced § Pb decrease with temperature increase § Pb decrease with Ar flow increase § Pb increase with RF power increase

Variation of Ar flow

  • w

Variation of substrate t e temp mperatu ature re Variation of RF po power er

0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 1.5 kW 2.0 kW 2.5 kW Composition (normalized) Pb/(Zr+Ti) i) Zr/ r/(Zr+Ti) i) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 500° C 550° C 600° C 650° C 700° C 750° C Composition (normalized) Pb/(Zr+Ti) i) Zr/(Zr+Ti) i) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 50 sccm 100 sccm 250 sccm 350 sccm Composition (normalized) Pb/(Zr+Ti) i) Zr/ r/(Zr+Ti) i)

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SLIDE 11

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

In-s

  • situ PZT deposition proce

cess ss 6” PZT w with PTO seed layer er

§ Best PZT films achieved with a PTO seed layer to promote the nucleation of the PZT perovskite structure § For films sputtered at 1 kW § ε ~ 1500 § tanδ = 3.2% § d33,f = 100pm/V § -e31,f = 7.5 C/m2

Perfor

  • rmanc

ance of fil ilms depo posited at at 2 kW kW

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SLIDE 12

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com
  • 50
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10 20 30 40 50

  • 300
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50 100 150 200 250 300

Field [kV/cm] Polarisation [µC/cm

2]

Th = 600°C Ec (avg) = 49.6 kV/cm Prem (avg) = 23.5 µC/cm2 Pmax (avg) = 42.5 µC/cm2

In-s

  • situ PZT deposition proce

cess ss 8” PZT w with TiO iO2 see eed layer er

§ Best piezoelectric data § ε ~ 1200 § tanδ = 3% § d33,f = 120 pm/V § -e31,f = 12.6 C/m2 § Similar performance for films without TiO2 seed layer

  • 0.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

  • 30
  • 25
  • 20
  • 15
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  • 5

5 10 15 20 25 30

Voltage [V] Displacement [nm]

Th = 600°C => d33,f = 120 pm/V

  • 0.05
  • 0.04
  • 0.03
  • 0.02
  • 0.01

0.00 0.01 0.02 0.03 0.04 0.05

  • 2000
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500 1000 1500 2000

Displacement [nm] Polarisation [µC/cm2]

Th = 600°C => e31,f = 12.6 C/m2

Polarisat ation vs. displacement nt Di Displac acement ent vs. . voltage ge

=> d33,f = 120 pm/V => -e31,f = 12.6 C/m2

44.88, PZT (200) 69.132, Si (400) 40.02, Pt (111) 38.25, PZT (111) 85.71, Pt (222) 25 30 35 40 45 50 55 60 65 70 75 80 85 90 2 Theta Intensity [a.u] 55.47, PZT (211)

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SLIDE 13

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

In-s

  • situ PZT deposition proce

cess ss Summ mmary ry

§ The existing sputter equipment is capable to deposit PZT films in-situ with the required perovskite structure § Therefore no additional annealing step is needed in the process sequence § Electrodes and PZT films can be deposited consecutively in a cluster tool without breaking the vacuum § Piezoelectric performance of best films comparable to state-of-the-art films deposited by chemical solution deposition (CSD) § Further improvements achievable by § Magnetron design => Thickness and composition uniformity, deposition rate § Target properties => Deposition rate § Process optimization => Piezoelectric properties

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SLIDE 14

2nd International Workshop on Piezoelectric MEMS - Lausanne, 06./07.09.2011

  • M. Kratzer, Oerlikon Systems R&D, e-mail: martin.kratzer@oerlikon.com

Thank you for your attention

  • n

The research leading to these results has received funding from the European Community's Seventh Framework Programme (FP7/2010-2013) under grant agreement n° 229196