INF5470 — Fall 2012 Lecture 10: Analog Storage
Content Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions Lecture 10: Analog Storage 2
Content Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions Lecture 10: Analog Storage 3
Overview ◮ volatile short term storage ◮ capacitive storage/dynamic storage ◮ volatile long term storage ◮ digital storage and DAC ◮ capacitive storage with refresh ◮ multi level flipflops ◮ non-volatile storage ◮ floating gates, analog flash ROM Lecture 10: Analog Storage 4
Content Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions Lecture 10: Analog Storage 5
Capacitive Storage In contrast to digital DRAM there is no means for an ’analog refresh’. Thus, this is only useful for short term storage. in/out Lecture 10: Analog Storage 6
Content Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions Lecture 10: Analog Storage 7
AD/DA Multi-Level Storage Ib Iin/restore Iout/restore Ib Ci Ci Iin/restore Iout/restore restore 4Ib 2Ib Ib Isyn Iw C2 C1 C0 restore C2 C1 Lecture 10: Analog Storage 8 C0
Content Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions Lecture 10: Analog Storage 9
’Fusing’ Amplifier Vdd bias plus + bias out minus - plus minus out Lecture 10: Analog Storage 10
Lecture 10: Analog Storage Weak Multi-Level Memory - + level<0> - + level<1> - + level<2> - + level<3> - + level<4> - + level<5> 11
Content Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions Lecture 10: Analog Storage 12
Analog ’Flash’/Floating Gate Memory out up hot e tunneling down Vdd voltage Lecture 10: Analog Storage 13
Fowler Nordheim Tunneling Band Diagram 3.2eV e - gate distance for tunneling channel Lecture 10: Analog Storage 14
High Voltage nFET poly n+ n+ n- p- Lecture 10: Analog Storage 15
High Voltage Switch Vdd HV OUT Nwell drain Nwell drain switch bias Lecture 10: Analog Storage 16
Content Overview Volatile Short Term Storage Indirect Multi-Level (AD/DA Digital) Storage Direct Multi-Level Storage Non-Volatile Storage Weekly Questions Lecture 10: Analog Storage 17
Weekly Questions 1. In the light of the introductory lecture about analog CMOS: why is EEPROM storage potentially difficult in more advanced standard technologies, like 90nm, 65nm ... CMOS? 2. By what mechanism do you imagine a synaptic weight could be changed in a biological synapse? One would be that the amount of neurotransmitter release in the synaptic cleft changes. Can you think of others? Lecture 10: Analog Storage 18
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