9/5/2018 CORIAL 360IL 300 mm ICP-RIE equipment for high performances and low CoO Wide process range for Industry-leading Large batch capacity with Silicon, Metals, III-V and uniformity and 23x2”, 7x4’’ or 3x6’’ wafer II-VI compounds repeatability handling Corial 360IL 2
SYSTEM DESCRIPTION CORIAL 360IL
9/5/2018 SYSTEM DESCRIPTION General View 390 COMPACT 960 600 FOOTPRINT 750 200 190 1760 500 357 550 460 Corial 360IL 4
9/5/2018 SYSTEM DESCRIPTION Detailed View ICP reactor Load lock Pumping system (TMP 1600l/s and dry pump 110 m 3 /h) Chiller / Heater Process controller HV and LV power supplies 2000 W ICP generator 2000 W RF generator Corial 360IL 5
9/5/2018 SYSTEM DESCRIPTION Loading < 240 s Vacuum robot Shuttle LOADING TIME FAST AND REPEATABLE LOAD AND UNLOAD EASY EXCHANGE BETWEEN SUBSTRATE SHAPE AND SIZE Corial 360IL 6
ICP SOURCE CORIAL 360IL
9/5/2018 ICP SOURCE 1. Load lock to run fluorinated and chlorinated chemistries in FAST AND the same process recipe UNIFORM ETCHING 2. Load lock for stable and repeatable process conditions 3. RF match box with matching range up to 2000 W 4. Optimized gas injection with top gas inlets, allowing fast etch rates and excellent uniformities 5. Uniform temperature control (from -50°C) for best repeatability 6. Hot walls (>250°C) minimize polymer condensation for selective processes 7. Shuttle holding to minimize process cross-contamination GaAs 500 nm/min Sapphire 75 nm/min GaN 200 nm/min … Corial 360IL 8
9/5/2018 ICP SOURCE Operation Sequence Aluminum enclosure Match Box Window 2 KW RF PLASMA Generator Gas shower at 2 MHz Cathode Coolant OUT Coolant IN Plasma heats the wafers Quartz Shuttle for Heat is transferred to shuttle 7 x 4’’ or 3 x 6 and to the cooled cathode by He pressure at 5 Torr Helium Corial 360IL 9
SHUTTLE HOLDING APPROACH CORIAL 360IL
9/5/2018 SHUTTLE HOLDING APPROACH Portfolio Quartz shuttle < 1 MM EDGE EFFECT Wafers Aluminum table with o-rings Shuttle Metal fingers >5,000 RUNS wafers CARRIER LIFETIME Aluminum table with o-rings Corial 360IL 11
9/5/2018 SHUTTLE HOLDING APPROACH Benefits VERY CLEAN AND SHARP FINGER At 1 mm from finger At 2 mm from finger At 3 mm from finger PRINT At finger Place At 1 mm from Top At 2 mm from Top At 3 mm from Top From Wafer Edge DISCOLOR AT WAFER EDGE NO Corial 360IL 12
PERFORMANCES ICP-RIE PROCESSES CORIAL 360IL
9/5/2018 PSS APPLICATION CUSTOMERS’ SPECIFICATIONS FOR 6’’ PSS ETCHING Features Specifications 50 – 60 ° Profile angle d = 100 ± 20 nm Midpoint PSS Height Gap < 50 nm gap PSS Width Gap < 70 nm gap Throughput (Wafers / h) 2.5 Throughput (Wafers / month) > 1700 Corial 360IL 14
9/5/2018 PSS APPLICATION SEM Results CORIAL Conical PSS SHAPE W1 W2 W4 PSS HEIGHT UNIFORMITY Top 1.78 ± 0.045 µm PSS WIDTH Centre UNIFORMITY 2.79 ± 0.045 µm Flat Corial 360IL 15
9/5/2018 PSS APPLICATION SEM Results CORIAL Triangle PSS SHAPE PSS HEIGHT Top 5 mm Centre Flat 5 mm UNIFORMITY 1.665 ± 0.035 µm PSS WIDTH UNIFORMITY 2.758 ± 0.035 µm Corial 360IL 16
9/5/2018 PSS APPLICATION Unimap Results CORIAL RUN TO RUN REPEATABILITY No RF Avg RF Std 1 3.506 0.329 6 3.365 0.257 7 3.571 0.322 0.2 0.20 STD OF BATCH AVERAGE REFLECTIVITY WAFER STD Corial 360IL 17
9/5/2018 PSS APPLICATION CORIAL’s Advantage OVER 95 % UPTIME IN LARGE SCALE PRODUCTION LESS THAN AFTER 60 MIN 400 RUNS REACTOR OF PSS CLEANING PROCESSES Corial 360IL 18
9/5/2018 PSS APPLICATION Throughput 4’’ and 6’’ wafers Cleaning Throughput Configuration Etch time Loading Total Time time (Wafers / h) Time 4” wafer 38 min 7 min 3 min 48 min > 8 6” wafer 45 min 7 min 3 min 50 min > 3 Throughput calculations for 1.7 µm high sapphire patterns Reactor manual cleaning after 1,000 µm of sapphire etch 1hour manual cleaning + 2 dummy runs after cleaning = Production stopped for 2 hours Corial 360IL 19
9/5/2018 MESA APPLICATION CORIAL’s Advantage 200 NM/MIN 30° GAN ETCH RATE ETCH PROFILE > 15 1.1 6’’ WAFERS/HOUR SELECTIVITY < ±5 % 1.2 µm etch depth UNIFORMITY Corial 360IL 20
9/5/2018 MESA APPLICATION Throughpput 4’’ and 6’’ wafers Cleaning Throughput Configuration Etch time Loading Total Time time (Wafers / h) Time 4” wafer 7 min 1 min 4 min 12 min > 36 6” wafer 8 min 1 min 4 min 13 min > 15 Throughput calculations for 1.2 µm high GaN patterns Corial 360IL 21
9/5/2018 ISO APPLICATION CORIAL’s Advantage 200 NM/MIN 35° GAN ETCH RATE ETCH PROFILE 18 > 1.1 WAFERS/HOUR SELECTIVITY < ± 5 % 7 µm etch depth UNIFORMITY Corial 360IL 22
9/5/2018 ISO APPLICATION Throughput 4’’ and 6’’ wafers Cleaning Throughput Configuration Etch time Loading Total Time time (Wafers / h) Time 4” wafer 36 min 2 min 4 min 42 min > 9 6” wafer 36 min 2 min 4 min 42 min > 4 Throughput calculations for 7 µm high GaN patterns Corial 360IL 23
USABILITY CORIAL 360IL
9/5/2018 PROCESS CONTROL SOFTWARE COSMA COSMA CO RIAL O PERATING S YSTEM FOR MA CHINE The simplest, most efficient software to develop processes, operate, and maintain CORIAL systems DESKTOP APPLICATION Process Editing I Process Adjustment I Process Operation I Process Tracability I System Maintenance REMOTE CONTROL Corial D250 / D250L 25
9/5/2018 REPROCESSING SOFTWARE COSMA RS DISPLAY UP TO Simple and efficient 4 software to analyze process runs and accelerate process development PARAMETERS FROM A RUN REMOTE ANALYSIS OF RUNS DRAG AND DROP CURVES TO CHECK PROCESS REPEATABILITY Corial 360IL 26
9/5/2018 CORIAL 360IL 300 mm ICP-RIE equipment for high performances and low CoO Wide process range for Industry-leading Large batch capacity with Silicon, Metals, III-V and uniformity and 23x2”, 7x4’’ or 3x6’’ wafer II-VI compounds repeatability handling Corial 360IL 27
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