9/5/2018 CORIAL D500 Large capacity batch system for 24/7 production environment High-quality films for a Film deposition from Large batch loading wide range of materials, 120°C up to 325°C. capacity (104 X 2”, 25 X incl. SiO2, Si3N4, SiOCH, Optional low-temperature 4”, 9 X 6”, 4 X 8” wafers, SiOF, SiC and aSi-H films chamber for film or large format substrates deposition at 20°C Corial D500 2
SYSTEM DESCRIPTION CORIAL D500
9/5/2018 SYSTEM DESCRIPTION General View COMPACT 390 Corial FOOTPRINT 960 600 D500 920 1340 700 2035 Corial D500 4
9/5/2018 SYSTEM DESCRIPTION Detailed View PECVD reactor Pumping system (TMP 500l/s and dry pump 560 m 3 /h) TMP controller Heating controller HV and LV power supplies Process controller 3000 W RF generator Corial D500 5
9/5/2018 SYSTEM DESCRIPTION Detailed View PECVD reactor Heating station Pumping system (TMP 500l/s and dry pump 560 m 3 /h) Cooling station TMP controller Heating controller HV and LV power supplies Process controller 3000 W RF generator Corial D500 6
9/5/2018 SYSTEM DESCRIPTION Mechanically Assisted Loading SAFE OPERATION AVOID 6 MIN HANDLING PRE-HEATING TIME IN DEDICATED STATION FOR FASTER SHUTTLE HEATING IN REACTOR DAMAGE TO THE 5 MIN WAFERS HEATING TIME IN REACTOR TO REACH 280°C 5 MIN COOLING TIME IN DEDICATED STATION AFTER PROCESSING TO REACH <70°C SUBSTRATE Corial D500 7 TEMPERATURE
9/5/2018 SYSTEM DESCRIPTION Mechanically Assisted Loading Shuttle Temperature Versus Time Shuttle Heating in Reactor Shuttle Temperature Versus Time 140 300 200 180 120 250 160 Temperature (°C) Temperature (°C) Temperature (°C) 100 140 200 120 80 150 100 60 80 100 60 40 40 50 20 20 0 0 0 0 5 10 15 0 2 4 6 0 5 10 15 Time (min) Time (min) Time (min) 5 MIN 6 MIN 5 MIN COOLING TIME IN DEDICATED STATION AFTER PROCESSING TO PRE-HEATING TIME IN DEDICATED STATION FOR FASTER HEATING TIME IN REACTOR TO REACH 280°C REACH <70°C SUBSTRATE TEMPERATURE SHUTTLE HEATING IN REACTOR Corial D500 8
PECVD REACTOR CORIAL D500
9/5/2018 PECVD REACTOR 1. Precise and uniform temperature control of the substrate and reactor walls delivers excellent RAPID AND UNIFORM deposition repeatability and uniformity DEPOSITION 2. Pressurized reactor ensures high-quality films free of pinholes 3. Optimized gas showerhead and symmetrical pumping deliver excellent deposition uniformity 4. High temperature, dual pumped configuration enables efficient plasma cleaning at operating temperature, with no corrosion of mechanical parts 5. Optimizing film stress control is simple to accomplish thanks to the reactor’s symmetrical design 6. System can operate for years without the need for manual cleaning Corial D500 10
9/5/2018 PECVD REACTOR Flexibility 20 TO 120 TO 150°C 325°C TEMPERATURE TEMPERATURE RANGE RANGE 0.2 TO 2 T PRESSURE RANGE ≤ 65 °C VACCUM VESSEL WALLS Corial D500 11
9/5/2018 PECVD REACTOR Operation Sequence 1 Cathode (Gas shower) Vacuum Substrate Holder Chamber Lift Corial D500 12
9/5/2018 PECVD REACTOR Operation Sequence Cathode (Gas shower) 2 Substrate Holder Vacuum Chamber Lift Compressed Air TMP Corial D500 13
9/5/2018 PECVD REACTOR Laser interferometer Gas Inlet Operation Sequence Match Box Heating cable Cathode (Gas shower) RF Generator 13.56 MHz PLASMA Substrate Holder Vacuum Chamber 3 Infra-red reflectors Lift Process Pump Compressed Air TMP Corial D500 14
9/5/2018 PECVD REACTOR Standard vs. Pressurized Reactor Standard PECVD CORIAL Pressurized Reactor Cold walls P2 PLASMA PLASMA P1 300 ° C H 2 O H 2 O TMP Roots TMP Outgasing from the P1 >> P2 leads to cold walls leads to NO film contamination film contamination ( H 2 O is pumped away by TMP ) Corial D500 15
9/5/2018 PECVD REACTOR Improved Film Quality Very low concentration of O and C atoms in aSi-H films deposited in Pressurized Plasma Reactor OXYGEN CONTAMINATION REDUCED BY 50 IN aSi-H FILM 10 18 O atoms/cm 3 CARBON CONTAMINATION REDUCED BY 5 10 18 C atoms/cm 3 5.10 17 C atoms/cm 3 IN aSi-H FILM Corial D500 16
9/5/2018 PECVD REACTOR Symmetrical Pumping EXCELLENT Gas inlet DEPOSITION High UNIFORMITY pumping ring Vertical pipe Low pumping ring SiO2 uniformity < ±2 % Process pump On 8’’ wafer Corial D500 17
9/5/2018 PECVD REACTOR Symmetrical Design When an RF electric field is applied, the plasma potential adjusts itself until it is clamped on the positive portion of RF Cathode area voltage (At the nearest floating potential (Vf)). The plasma potential is always higher than the highest potential of any surface in contact with the plasma = Anode area The mean plasma potential ( Vp ) and the self bias voltage (VDC) accelerate the positive ions and give them a high kinetic energy. In case of pressurized reactor the VDC is zero. Ion energy is equal to e∙Vp + Initial energy of positive ions Mean plasma potential (V p ) Self bias voltage (-V DC ). Zero bias in case of CORIAL reactor Corial D500 18
9/5/2018 PECVD REACTOR Symmetrical Design Standard PECVD CORIAL Pressurized Reactor Cathode (13.56 MHz) Anode Anode area >> Cathode area Anode area = Cathode area • • Self bias voltage on cathode (V DC ) >> 100 V Self bias voltage on cathode (V DC ) = 0V • Mean plasma potential = (V RF – V DC )/2 (≈ few Volts) • Mean plasma potential = V RF / 2 (Few hundred • Low energy ion bombardment on wafers sitting on the anode volts) • (ground) High energy ion bombardment on wafers sitting on anode Corial D500 19
9/5/2018 PECVD REACTOR Stress Control PRECISE AND SIMPLE STRESS CORIAL Pressurized Standard PECVD Reactor CONTROL Double frequency system Single frequency convenient for stress control required for stress control 13.56 MHz for compressive stress 13.56 MHz for compressive & tensile stress 100 to 400 KHz for stress control Corial D500 20
9/5/2018 PECVD REACTOR Stress Control Stress controlled by RF power, Ar flow rate and gas mixture Si x N y with tunable stress SiO 2 with tunable stress SiC with tunable stress Corial D500 21
PERFORMANCES PECVD PROCESSES CORIAL D500
9/5/2018 LAYER SPECIFICATIONS MEMS SiO 2 with tunable stress SiO 2 with breakdown voltage Si x N y with tunable stress > 10 MV/cm SiO 2 with low BOE etch rate Si 3 N 4 with low KOH etch rate Corial D500 23
9/5/2018 LAYER SPECIFICATIONS III-V Compounds, Optoelectronics SiO 2 with tunable stress Si 3 N 4 with low KOH etch Low SiO 2 BOE etch rate rate DRIE of glass SiC tunable stress Low damaged after annealing Corial D500 24
9/5/2018 LAYER SPECIFICATIONS Step coverage by Step coverage by Self-planarized SiH 4 + N 2 O deposition HMDSO + O 2 deposition Deposition of SiOF Corial D500 25
9/5/2018 HIGH DEPOSITION RATES Excellent Uniformities Deposition Rate Refractive Index Stress Uniformity Process on 8” Wafers (nm/min) (MPa) < ± 3% SiO x 20 to 500 * 1.458 to 1.478 -300 to +50 < ± 3% Si x N y 20 to 250 * 1.8 to 2.1 -300 to +150 1.41 ± 0.02 < ± 3% SiOF > 50 -100 to -0 1.45 ± 0.02 < ± 3% SiOCH 50 to 200 -100 to -20 < ± 3% Si x C 20 to 150 2.6 to 2.9 -100 to +100 * Configuration-dependent Measurement performed with 5 mm edge exclusion Corial D500 26
9/5/2018 HIGH THROUGHPUT Large Capacity Batch System Throughput calculations for 0,25 µm deposition of SiO2 Configuration Deposition Time Loading Time Cleaning Time Throughput (min) (min) (min) (Wafer/month) 104 x 2’’ 5 12 64 > 200,000 25 x 4’’ 5 12 64 > 50,000 9 x 6’’ 5 12 64 > 18,000 5 x 8’’ 5 12 64 > 10,000 Plasma cleaning when 5 µm of SiO2 are deposited Corial D500 27
9/5/2018 HIGH THROUGHPUT Large Capacity Batch System Throughput calculations for 2 µm deposition of SiO2 Configuration Deposition Time Loading Time Cleaning Time Throughput (min) (min) (min) (Wafer/month) 104 x 2’’ 18 12 74 > 78,000 25 x 4’’ 18 12 74 > 18,000 9 x 6’’ 18 12 74 > 6,700 5 x 8’’ 18 12 74 > 3,700 Plasma cleaning when 6 µm of SiO2 are deposited Corial D500 28
CLEANING CORIAL D500
9/5/2018 REACTOR PLASMA CLEANING For Particle Free Processes HIGH UPTIME In situ Automatic Reactor plasma EPD of reactor plasma cleaning cleaning process NO Pressurized Reactor Design MECHANICAL CLEANING Corial D500 31
9/5/2018 PECVD REACTOR In Situ Cleaning Sequence 1 Closed gate valve Roots Corial D500 32
9/5/2018 PECVD REACTOR In Situ Cleaning Sequence SF 6 Gas Inlet N2 leaks P2 Send N 2 2 P1 Closed gate valve P1 << P2 Roots Corial D500 33
9/5/2018 PECVD REACTOR In Situ Cleaning Sequence SF 6 Gas Inlet N2 leaks P2 Send N 2 Walls at 300 ° C PLASMA P1 Closed gate valve P1 << P2 3 NO fluorine Walls at 300°C leads to atoms in the efficient plasma cleaning SiH 4 stopped while vacuum vessel plasma still ON and, thereby, minimum NO corrosion particle contamination NO pin holes Corial D500 34
USABILITY CORIAL D500
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