9/6/2018 CORIAL D250 / D250L PECVD equipment for wafer sizes up to 200 mm Large process range for Designed for NO Smaller wafer pieces up High & Low Temp mechanical cleaning to full 200 mm wafer deposition of silicon compounds Corial D250 / D250L 2
SYSTEM DESCRIPTION CORIAL D250 / D250L
9/6/2018 SYSTEM DESCRIPTION General View THE MOST 390 COMPACT 30 % MACHINE 960 600 ON THE MARKET SMALLER 750 FOOTPRINT 1080 Corial D250 / D250L 4
9/6/2018 SYSTEM DESCRIPTION Detailed View EPD with laser PECVD reactor Pumping system (TMP 350l/s and dry pump 110 m 3 /h) TMP controller HV and LV power Heating controller supplies Process controller 300 W RF generator Corial D250 / D250L 5
9/6/2018 SYSTEM DESCRIPTION General View THE MOST 390 COMPACT 30 % 960 MACHINE 600 ON THE MARKET SMALLER 750 FOOTPRINT 1570 Corial D250 / D250L 6
9/6/2018 SYSTEM DESCRIPTION Detailed View EPD with laser PECVD reactor Load lock Pumping system (TMP 350l/s and dry pump 110 m 3 /h) TMP controller HV and LV power Heating controller supplies Process controller 300 W RF generator Corial D250 / D250L 7
9/6/2018 SYSTEM DESCRIPTION Loading EASY EXCHANGE BETWEEN SUBSTRATE SHAPE AND Shuttle SIZE < 180 s < 240 s VACUUM ROBOT ON Corial D250L FOR FAST AND REPEATABLE LOAD AND UNLOAD LOADING TIME WITH Corial D250 Corial D250 / D250L 8
PECVD REACTOR CORIAL D250 / D250L
9/6/2018 PECVD REACTOR 1. Precise and uniform temperature control of the substrate and reactor walls delivers excellent deposition RAPID AND UNIFORM repeatability and uniformity 2. Pressurized reactor ensures high-quality films free of DEPOSITION pinholes 3. Optimized gas showerhead and symmetrical pumping deliver excellent deposition uniformity 4. High temperature, dual pumped configuration enables efficient plasma cleaning at operating temperature, with no corrosion of mechanical parts 5. Optimizing film stress control is simple to accomplish thanks to the reactor’s symmetrical design 6. System can operate for years without the need for manual cleaning SiO 2 520 nm/min Si 3 N 4 250 nm/min SiC 100 nm/minn … Corial D250 / D250L 10
9/6/2018 PECVD REACTOR Flexibility 20 TO 120 TO 150°C 325°C TEMPERATURE TEMPERATURE RANGE RANGE 0.2 TO 2 T PRESSURE RANGE ≤ 65 °C VACUUM VESSEL WALLS Corial D250 / D250L 11
9/6/2018 PECVD REACTOR Operation Sequence 1 Cathode (Gas shower) Vacuum Substrate Holder Chamber Lift Corial D250 / D250L 12
9/6/2018 PECVD REACTOR Operation Sequence Cathode (Gas shower) 2 Substrate Holder Vacuum Chamber Lift Compressed Air TMP Corial D250 / D250L 13
9/6/2018 PECVD REACTOR Laser interferometer Gas Inlet Operation Sequence Match Box Heating cable Cathode (Gas shower) RF Generator 13.56 MHz PLASMA Substrate Holder Vacuum Chamber 3 Infra-red reflectors Lift Process Pump Compressed Air TMP Corial D250 / D250L 14
9/6/2018 PECVD REACTOR Design IR reflector High pumping ring Gas shower Heating cable Substrate holder Vertical pipe Corial D250 / D250L 15
9/6/2018 PECVD REACTOR Standard vs. Pressurized Reactor Standard PECVD CORIAL Pressurized Reactor Cold walls P2 PLASMA PLASMA P1 300 ° C H 2 O H 2 O TMP Roots TMP Outgasing from the P1 >> P2 leads to cold walls leads to NO film contamination film contamination ( H 2 O is pumped away by TMP ) Corial D250 / D250L 16
9/6/2018 PECVD REACTOR Improved Film Quality Very low concentration of O and C atoms in aSi-H films deposited in Pressurized Plasma Reactor OXYGEN CONTAMINATION REDUCED BY 50 IN aSi-H FILM 10 18 O atoms/cm 3 CARBON CONTAMINATION REDUCED BY 5 10 18 C atoms/cm 3 5.10 17 C atoms/cm 3 IN aSi-H FILM Corial D250 / D250L 17
9/6/2018 PECVD REACTOR Symmetrical Pumping EXCELLENT Gas inlet DEPOSITION High UNIFORMITY pumping ring Vertical pipe Low pumping ring SiO2 uniformity < ±2 % Process pump On 8’’ wafer Corial D250 / D250L 18
9/6/2018 PECVD REACTOR Symmetrical Design When an RF electric field is applied, the plasma potential adjusts itself until it is clamped on the positive portion of RF Cathode area voltage (At the nearest floating potential (Vf)). The plasma potential is always higher than the highest potential of any surface in contact with the plasma = Anode area The mean plasma potential ( Vp ) and the self bias voltage (VDC) accelerate the positive ions and give them a high kinetic energy. In case of pressurized reactor the VDC is zero. Ion energy is equal to e∙Vp + Initial energy of positive ions Mean plasma potential (V p ) Self bias voltage (-V DC ). Zero bias in case of CORIAL reactor Corial D250 / D250L 19
9/6/2018 PECVD REACTOR Symmetrical Design Standard PECVD CORIAL Pressurized Reactor Cathode (13.56 MHz) Anode Anode area >> Cathode area Anode area = Cathode area • • Self bias voltage on cathode (V DC ) >> 100 V Self bias voltage on cathode (V DC ) = 0V • Mean plasma potential = (V RF – V DC )/2 (≈ few Volts) • Mean plasma potential = V RF / 2 (Few hundred • Low energy ion bombardment on wafers sitting on the anode volts) • (ground) High energy ion bombardment on wafers sitting on anode Corial D250 / D250L 20
9/6/2018 PECVD REACTOR Stress Control PRECISE AND SIMPLE STRESS CORIAL Pressurized Standard PECVD Reactor CONTROL Double frequency system Single frequency convenient for stress control required for stress control 13.56 MHz for compressive stress 13.56 MHz for compressive & tensile stress 100 to 400 KHz for stress control Corial D250 / D250L 21
9/6/2018 PECVD REACTOR Stress Control Stress controlled by RF power, Ar flow rate and gas mixture Si x N y with tunable stress SiO 2 with tunable stress SiC with tunable stress Corial D250 / D250L 22
PERFORMANCES PECVD PROCESSES CORIAL D250 / D250L
9/6/2018 LAYER SPECIFICATIONS MEMS SiO 2 with tunable stress SiO 2 with breakdown voltage Si x N y with tunable stress > 10 MV/cm SiO 2 with low BOE etch rate Si 3 N 4 with low KOH etch rate Corial D250 / D250L 24
9/6/2018 LAYER SPECIFICATIONS III-V Compounds, Optoelectronics SiO 2 with tunable stress Si 3 N 4 with low KOH etch Low SiO 2 BOE etch rate rate DRIE of glass SiC tunable stress Low damaged after annealing Corial D250 / D250L 25
9/6/2018 LAYER SPECIFICATIONS Step coverage by Step coverage by Self-planarized SiH 4 + N 2 O deposition HMDSO + O 2 deposition Deposition of SiOF Corial D250 / D250L 26
9/6/2018 HIGH DEPOSITION RATES Excellent Uniformities Deposition Rate Refractive Index Stress Uniformity Process on 8” Wafers (nm/min) (MPa) < ± 3% SiO x 20 to 500 * 1.458 to 1.478 -300 to +50 < ± 3% Si x N y 20 to 250 * 1.8 to 2.1 -300 to +150 1.41 ± 0.02 < ± 3% SiOF > 50 -100 to -0 1.45 ± 0.02 < ± 3% SiOCH 50 to 200 -100 to -20 < ± 3% Si x C 20 to 150 2.6 to 2.9 -100 to +100 * Configuration-dependent Measurement performed with 5 mm edge exclusion Corial D250 / D250L 27
PERFORMANCES TIME-MULTIPLEXED PROCESSES CORIAL D250 WITH COSMA PULSE
9/6/2018 COSMA PULSE DESCRIPTION Advanced Process Control Show/close all the Details of the pulsed details of the pulsed parameter setting Mode: Pulsed parameters Show the pulsed parameters 10 ms ALL PARAMETERS UPGRADE DATA AQUISITION CAN BE CONTROLLED AND PULSED FOR CORIAL’S SYSTEMS ALREADY INSTALLED AT CUSTOMERS’ SITES Corial D250 / D250L 30
9/6/2018 TIME-MULTIPLEXED PROCESSES Example Enlarged process window to achieve better control of film properties, and supports Atomic Layer Deposition Corial D250 / D250L 31
9/6/2018 TIME-MULTIPLEXED PROCESSES Performances Deposition of 30 periods: 6 nm SiO2 + 4 nm aSi-H` by COSMA Pulse software Corial D250 / D250L 32
CLEANING CORIAL D250 / D250L
9/6/2018 PARTICLE CONTAMINATION Standard PECVD Reasons for particle contamination: • Films are deposited on cold surfaces (<100 ° C), giving rise to poor film adhesion responsible for film pealing (big particles, Cathode size > 50 µm) (<100 ° C) • Plasma cleaning cannot fully remove deposited films on cold surfaces, giving rise to built up of thick films and, thereby, film Anode pealing, (300 ° C) • Plasma cleaning leads to corrosion of metals other than Al having a high Walls temperature (> 200 ° C). This corrosion is (<60 ° C) responsible for big particles (size > 50 µm), • Powders (*) in the plasma responsible for pin-holes in deposited films. (*) Powders or clusters come from fast exothermic anion-radical reactions as SinHm - + SiHm' to Sin+1Hm+m'- 2q- +qH2 that can lead to nucleation of up to 10 4 Si atoms. Corial D250 / D250L 35
9/6/2018 REACTOR PLASMA CLEANING For Particle Free Processes HIGH UPTIME In situ Automatic Reactor plasma EPD of reactor plasma cleaning cleaning process NO Pressurized Reactor Design MECHANICAL CLEANING Corial D250 / D250L 36
9/6/2018 PECVD REACTOR In Situ Cleaning Sequence 1 Closed gate valve Roots Corial D250 / D250L 37
9/6/2018 PECVD REACTOR In Situ Cleaning Sequence SF 6 Gas Inlet N2 leaks P2 Send N 2 2 P1 Closed gate valve P1 << P2 Roots Corial D250 / D250L 38
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