CORIAL 200S 7/19/18 Easy-to-use Reactive Ion Etching equipment Wide process range for Si, Rapid substrate loading and Smaller wafer pieces up to silicon-based compounds, unloading full 200 mm wafer 1 x2’’ to 7x2’’ ; 1x3’’ to 3x3’’ metals and Polymers ; 1x4’’ ; 1x6’’ ; 1x8’’ Corial 200S 2
SYSTEM DESCRIPTION CORIAL 200S
SYSTEM DESCRIPTION 7/19/18 General View 193 SMALL 627 FOOTPRINT 600 Low CoO 0.81 m2 750 1080 357 490 420 Corial 200S 4
SYSTEM DESCRIPTION 7/19/18 Detailed View RIE reactor Pumping system (TMP 500l/s and dry pump 28m 3 /h) Chiller / Heater HV and LV power supplies 300 W RF generator Process controller (13,56 Mhz) Corial 200S 5
SYSTEM DESCRIPTION 7/19/18 Loading < 210 s Direct loading Shuttle LOADING TIME FAST LOAD AND UNLOAD EASY EXCHANGE BETWEEN SUBSTRATE SHAPE AND SIZE Corial 200S 6
STANDARD RIE SOURCE CORIAL 200S
RIE SOURCE 7/19/18 Easy-to-use For fluorine-based 1. Excellent process control enabled by efficient substrate etch processes cooling 2. Retractable liner for sputter-etch increase time between cleans and reduce clean time 3. shuttle (carrier) design, combined with a standard cathode, for a cost-effective and fast reactor adaptation, suitable for multiple applications and substrate types 4. Minimized maintenance SiO2 50 nm/min Si3N4 60 nm/min Nb 100 nm/min … Corial 200S 8
RIE SOURCE 7/19/18 Operation Sequence Substrate Laser window 200 mm wafer holder PLASMA Cathode TMP Helium IN A He pressure at 5 Torrs maintains the substrate Coolant IN Coolant OUT holder at constant temperature Corial 200S 9
PERFORMANCES RIE PROCESSES CORIAL 200S
RIE OF SI, OXIDES, NITRIDES 7/19/18 Fluorinated chemistry RIE of SiO2 with PR mask – RIE of SiO2 with PR mask – 0.8 µm RIE of Si – 0.8 µm deep - RIE of Si3N4 - 0.8 µm deep Vertical profile – High etch deep Anisotropic profile uniformity Corial 200S 11
RIE OF METALS 7/19/18 Fluorinated chemistry Nb Etching with PR mask – TaEtching with PR mask – RIE of Nb / Ta Ti Etching with PR mask - Anisotropic profile Anisotropic profile Anisotropic profile Corial 200S 12
HIGH ETCH RATES 7/19/18 Excellent Uniformities Etch rate Selectivity Uniformity Process Mask (nm/min) (vs mask) (across wafer) Polymers PR 400 1 ±5% SiO 2 PR 50 3 ±3% Si 3 N 4 PR 60 > 2 ±3% Si PR 100 1 ±5% Nb PR 100 > 0.5 ±5% Ta PR 90 > 0.5 ±5% Ti PR 25 0.3 ±5% Corial 200S 13
RIE SOURCE FOR SPUTTER-ETCH CORIAL 200S
SPUTTER-ETCH 7/19/18 RIE Process Chamber for Etching and Sputtering LINER TO COLLECT ETCH-BY-PRODUCTS AND SPUTTERED MATERIALS EASY LINER replacement by a 4 min 5 min single person Pumping down Liner replacement to 10 -4 Tor Dedicated process 1 min 5 min chamber for Reactor Venting Plasma Au, Ag, Ni, Fe, Co, cleaning Pt, PZT… SPUTTERING Corial 200S 15
SPUTTER ETCH 7/19/18 Ar chemistry Etch rate Selectivity Uniformity Process Mask (nm/min) (vs mask) (across wafer) Au, Pt, PZT, Fe, Co PR 45 > 1 ±5% Back sputtering of Pt with PR mask Corial 200S 16
SHUTTLE HOLDING APPROACH CORIAL 200S
SHUTTLE HOLDING APPROACH 7/19/18 Portfolio NG20 wafer carrier NQ200 wafer carrier 50 mm wafer 75 mm wafer 100 mm wafer 50 mm wafer 75 mm wafer 100 mm wafer 150 mm wafer 200 mm wafer 150 mm wafer 200 mm wafer Corial 200S 18
SHUTTLE HOLDING APPROACH 7/19/18 Impact on Performances SiO2 etching with aSi-H mask Positive slope Conductive Shuttle Negative slope Thick Quartz Conductive Shuttle Optimized Quartz Vertical slope Conductive Shuttle Corial 200S 19
SHUTTLE HOLDING APPROACH 7/19/18 Benefits 1. Quick adaptation to sample shape and size 2. Optimum process conditions with NO modification of process chamber 3. Limited cross contamination between processes by using dedicated shuttles 2’’ Wafer carrier Corial 200S 20
USABILITY CORIAL 200S
PROCESS CONTROL SOFTWARE 7/19/18 COSMA The simplest, most efficient software to develop processes, operate, and maintain CORIAL systems DESKTOP APPLICATION Process Editing I Process Adjustment I Process Operation I Process Tracability I System Maintenance REMOTE CONTROL MOBILE APPLICATION NEW 2018 Module & Process Follow-Up I Alarms & Warnings Connected Users Corial 200S 22
REPROCESSING SOFTWARE 7/19/18 COSMA RS DISPLAY UP TO Simple and efficient 4 software to analyze process runs and accelerate process development PARAMETERS FROM A RUN REMOTE ANALYSIS OF RUNS DRAG AND DROP CURVES TO CHECK PROCESS REPEATABILITY Corial 200S 23
END POINT DETECTION 7/19/18 EPD with laser A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the wafer surface and the laser beam impact on it. A 20 µm diameter laser spot facilitates the record of interference signals. Real-Time etch rate measurement Real-Time etched depth measurement Corial 200S 24
CORIAL 200S 7/19/18 Easy-to-use Reactive Ion Etching equipment Wide process range for Si, Rapid substrate loading and Smaller wafer pieces up to silicon-based compounds, unloading full 200 mm wafer 1 x2’’ to 7x2’’ ; 1x3’’ to 3x3’’ metals and Polymers ; 1x4’’ ; 1x6’’ ; 1x8’’ Corial 200S 25
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