CMOS Analog VLSI Design Course Code: EE618 Department: Electrical Engineering Semester: Autumn 2015 Date: July 20, 2015 Instructor: M. Shojaei Baghini E-Mail ID: mshojaei@ee.iitb.ac.in 1
2 What is called an analog element? Why are analog integrated circuits required? IIT-Bombay Lecture 1 M. Shojaei Baghini
4 Content of the course Introduction A review of MOS devices Biasing concept in analog circuits Basic single-stage and single-input analog modules Differential amplifiers Frequency response of basic analog modules Feedback theory in analog circuits Operational amplifiers IIT-Bombay Lecture 1 M. Shojaei Baghini
5 Content of the course (cont’d) Reference generators Noise Output stages Comparators Basic considerations in the layout of analog circuits IIT-Bombay Lecture 1 M. Shojaei Baghini
6 Course References Design and Analysis of Integrated Circuits by Paul R. Gray and Meyer, 2009 (main reference 1) Design of Analog CMOS Integrated Circuits by Behzad Razavi, McGraw Hill, 2001 edition onwards (main reference 2) CMOS Analog Circuit Design by P. E. Allen et al. , Oxford University Press, 2002 edition onwards. CMOS circuit design, layout and simulation, by R. J. Baker, IEEE press, 2010. We may use a paper for the course project IIT-Bombay Lecture 1 M. Shojaei Baghini
7 Grading Quiz : (2 quizzes) 10% Assignments (3): 15% (no late submission!) Course Project: 15% (no late submission!) Midsem Exam: 30% (20%) Final Exam: 30% (40%) • EDA tools: - NGSPICE for circuit simulations - XCircuit for the schematic capture • Technology: 180nm CMOS process (test BSIM3 Version 3.1 model parameters available from MOSIS) BSIM stands for Berkeley Short-channel IGFET Model . IIT-Bombay Lecture 1 M. Shojaei Baghini
8 Notations for Signals • DC Bias values of the signals • Average value of a signal • Large signal • Small signal IIT-Bombay Lecture 1 M. Shojaei Baghini
9 Basic Definitions Related to Energy Band Diagram of Materials • Vacuum level: Energy state (energy level) of electrons outside the material (E 0 ) • E c : Lowest energy level corresponding to the conduction band • E v : Highest energy level corresponding to the valence band • Electron affinity: The difference between E 0 and E c IIT-Bombay Lecture 1 M. Shojaei Baghini
10 MOS Capacitor Structure, Flat-band Condition V FB = ψ g - ψ s (gate and Source: Modern Semiconductor Devices for semiconductor Integrated Circuits by work functions) Chenming C. Hu, 2010 Ex.: V FB = 4.05 -(4.05 + (E c -E f )/q) ≈ -0.7V IIT-Bombay Lecture 1 M. Shojaei Baghini
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