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CMOS Analog VLSI Design Course Code: EE618 Department: Electrical - PowerPoint PPT Presentation

CMOS Analog VLSI Design Course Code: EE618 Department: Electrical Engineering Semester: Autumn 2015 Date: July 20, 2015 Instructor: M. Shojaei Baghini E-Mail ID: mshojaei@ee.iitb.ac.in 1 2 What is called an analog element? Why are analog


  1. CMOS Analog VLSI Design Course Code: EE618 Department: Electrical Engineering Semester: Autumn 2015 Date: July 20, 2015 Instructor: M. Shojaei Baghini E-Mail ID: mshojaei@ee.iitb.ac.in 1

  2. 2 What is called an analog element? Why are analog integrated circuits required? IIT-Bombay Lecture 1 M. Shojaei Baghini

  3. 4 Content of the course  Introduction  A review of MOS devices  Biasing concept in analog circuits  Basic single-stage and single-input analog modules  Differential amplifiers  Frequency response of basic analog modules  Feedback theory in analog circuits  Operational amplifiers IIT-Bombay Lecture 1 M. Shojaei Baghini

  4. 5 Content of the course (cont’d)  Reference generators  Noise  Output stages  Comparators  Basic considerations in the layout of analog circuits IIT-Bombay Lecture 1 M. Shojaei Baghini

  5. 6 Course References  Design and Analysis of Integrated Circuits by Paul R. Gray and Meyer, 2009 (main reference 1)  Design of Analog CMOS Integrated Circuits by Behzad Razavi, McGraw Hill, 2001 edition onwards (main reference 2)  CMOS Analog Circuit Design by P. E. Allen et al. , Oxford University Press, 2002 edition onwards.  CMOS circuit design, layout and simulation, by R. J. Baker, IEEE press, 2010.  We may use a paper for the course project IIT-Bombay Lecture 1 M. Shojaei Baghini

  6. 7 Grading  Quiz : (2 quizzes) 10%  Assignments (3): 15% (no late submission!)  Course Project: 15% (no late submission!)  Midsem Exam: 30% (20%)  Final Exam: 30% (40%) • EDA tools: - NGSPICE for circuit simulations - XCircuit for the schematic capture • Technology: 180nm CMOS process (test BSIM3 Version 3.1 model parameters available from MOSIS) BSIM stands for Berkeley Short-channel IGFET Model . IIT-Bombay Lecture 1 M. Shojaei Baghini

  7. 8 Notations for Signals • DC Bias values of the signals • Average value of a signal • Large signal • Small signal IIT-Bombay Lecture 1 M. Shojaei Baghini

  8. 9 Basic Definitions Related to Energy Band Diagram of Materials • Vacuum level: Energy state (energy level) of electrons outside the material (E 0 ) • E c : Lowest energy level corresponding to the conduction band • E v : Highest energy level corresponding to the valence band • Electron affinity: The difference between E 0 and E c IIT-Bombay Lecture 1 M. Shojaei Baghini

  9. 10 MOS Capacitor Structure, Flat-band Condition V FB = ψ g - ψ s (gate and Source: Modern Semiconductor Devices for semiconductor Integrated Circuits by work functions) Chenming C. Hu, 2010 Ex.: V FB = 4.05 -(4.05 + (E c -E f )/q) ≈ -0.7V IIT-Bombay Lecture 1 M. Shojaei Baghini

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