The study of topological nontrivial materials Bezryadina Tatiana, Faculty of Physics, Tomsk State University
Quantum Hall effect The quantization of the transverse resistance of two dimensional electron gas in a strong magnetic field.
Topological insulators Electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface
Magnetization of Topological Surface States of Topological Insulators (a)Doping magnetic impurities (b)Chemical adsorption on the surface (c)Interfacial magnetic proximity (d)Magnetic extension
VSe CrSe a=3.91 Ȧ, c=6.23Ȧ a=3.88 Ȧ, c=6.28Ȧ
Bulk band structure
Bilayer VSe CrSe a=4.12 Ȧ , μ =3 μ B a=4.12 Ȧ , μ =4 μ B
Band structure
Heterostructure formed by subsurface incorporation of a ferromagnetic layer Total energy of TI+VSe (Se-top)= -34.10 eV TI+VSe (V-in)= -35.69 eV TI+CrSe (Se-top)= -34.74eV TI+CrSe (Cr-in)= -35.22 eV
VBi 2 Se 4 SL CrBi 2 Se 4 SL μ= 4 μ B μ =3 μ B
Band dispersion of the free-standing layer
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