New Models for Burn-In of Semiconductor Devices Horst Lewitschnig - - PowerPoint PPT Presentation

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling New Models for Burn-In of Semiconductor Devices Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ urgen Pilz - Alpen Adria University Klagenfurt, Austria 2015-10-17 - Daejeon - South Korea Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn-In today vs. new concepts 1 Countermeasure Model 2 Synergy Model 3 Multiple Reference Products 4 Area Specific Scaling 5 Publication List 6 Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn-In today vs. new concepts 1 Countermeasure Model 2 Synergy Model 3 Multiple Reference Products 4 Area Specific Scaling 5 Publication List 6 Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Bathtub curve Bathtub curve Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn in - Elimination of Early life Early Fails Means to weed out early life fails: DD-screening Stress tests Outlier detection ... Burn-In Burn-In is one method amongst many others to eliminate early life fails. Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn-In today 2 Concepts Random sampling: 100 % Burn-In Optimization by Burn-In time reduction. Burn-In study Random samples are taken out of production and put into burn-in. In parallel 100 % Burn-In, as long as the Burn-In study is not passed. If the Burn-In study is pass, switch to BI-monitoring. Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn-In today p @ 90 % CL Random sampling: 0 / 100000 = 23 ppm @ 90 % CL; 0 / 350000 = 6 . 6 ppm @ 90 % CL; 1 ppm @ 90 % CL = 0 / 2 . 31 Mio. Beyond Sampling Pure random sampling gives limited results. The idea is to include further information to the random sample. On the following pages some of these ideas are introduced. Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn In - new concepts Extended approach The classical approach looks only at the random sample. The extended approach takes further information into account: Countermeasure model: The efficiency of countermeasures as well as the overall performance of BI-studies is taken into account. Multiple reference products: In case of two or more reference products, an exact area scaling is now possible. Synergy model: Information about equal chip subsets, that have already passed Burn-In studies, are used. Area specific scaling: If different chip subsets show different ppm-values, referencing is done on these area-specific levels. Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn-In today vs. new concepts 1 Countermeasure Model 2 Synergy Model 3 Multiple Reference Products 4 Area Specific Scaling 5 Publication List 6 Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Idea: Burn In Fails and Countermeasures - Estimation of p 1 Burn In Fail, Countermeasure α % effective 0 . 1 = α · B (0; n , p ) + (1 − α ) · B (1; n , p ) Effectiveness The effectiveness of a countermeasure reflects expert knowledge, available data, ... It is a prior distribution. We propose to use the 10 % - quantile of this prior distribution. Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Idea: Burn In Fails and Countermeasures - Estimation of p Example n = 100 k pcs., 1 Burn In fail, countermeasure 80 % effective. 0 . 1 = 0 . 8 · B (0; n , p ) + 0 . 2 · B (1; n , p ) . Solution without countermeasure: p = 39 ppm @ 90% CL, with countermeasure: p = 27 ppm @ 90% CL. Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn In Fails and Countermeasures - full picture Burn In Fail with Countermeasure - full picture Let’s assume we put 100 k devices to burn in with 1 fail, introduce a countermeasure with 80 % effectiveness, and burn again 100 k pcs. with no fails. Taking all information into account, this results in 0 . 1 = 0 . 8 · B (0; 200000 , p ) + 0 . 2 · B (1; 200000 , p ) , → 13 . 7 ppm @ 90 % CL. Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn-In today vs. new concepts 1 Countermeasure Model 2 Synergy Model 3 Multiple Reference Products 4 Area Specific Scaling 5 Publication List 6 Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Synergy Model Let’s assume two technologies which only differ in the metal block: Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Synergy Model Let’s say technology 1 had 250 k pcs. in Burn-In, technology 2 had 100 k pcs. in Burn-In. Products are assembled from all combinations of their subsets (combinatorial model): Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Synergy Model Example - Comparison If we look only at technology 2: 1 / 100000 pcs. → 39 ppm @ 90 % CL. If we look at technology 1 and 2: 1 / (100000 + 250000) pcs. for the substrate 0 / 100000 pcs. for the metal block → 29 ppm @ 90 % CL. Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Burn-In today vs. new concepts 1 Countermeasure Model 2 Synergy Model 3 Multiple Reference Products 4 Area Specific Scaling 5 Publication List 6 Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Multiple Reference Products Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria

Countermeasure Model Synergy Model Multiple Reference Products Area Specific Scaling Multiple Reference Products Reference products 1 and 2 are built up with elements of size A gcd 1 fail at reference product 2 can be caused by 1 or several failed elements of size A gcd failed on the same chip (probabilities based on hypergeometric distribution). � (all possibilities to built up reference products 1 and 2, p gcd ) = 0.1, → numerical solution for p gcd Horst Lewitschnig - Infineon Technologies Austria AG, Daniel Kurz, J¨ New Models for Burn-In of Semiconductor Devices urgen Pilz - Alpen Adria University Klagenfurt, Austria