Device fabrication /3 [Hastings]
[In this slides, mask stands for photomask, i.e. (photo)reticle ] Si (111)
Si (100)
After mask 4 ( V T adjust) This step is to increase both V T ’s, from ~ -1.6 and 0 V to ~ -0.8 and 0.8 V
◼ Very small inductors can also be realized This is an X-band low noise amplifier (LNA), designed in the IHP SG 13 G 2 technology Frequency range: 9-11 GHz
◼ Example of available processes ( Europractice multi-project wafer schedule 2012) [1/2]
◼ Example of available processes ( Europractice multi- project wafer schedule 2012) [2/2]
Now, copper is preferred for interconnections in complex circuits • trenches are carved into a dielectric layer • and are lined with a layer of tantalum or tantalum nitride; • the trenches are then filled with copper using an electrochemical process. This tantalum layer acts as a barrier to prevent the copper from diffusing its way out of the trenches
Just to have an idea on the costs... if - non-recurring costs: 7 M$ - recurring costs: 2.3 $ then:
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