Welcome to JST-DFG Workshop on Nanoelectronics Prof. Dr. Katsuaki - PowerPoint PPT Presentation

Japan Science and Technology Agency Opening Remarks Welcome to JST-DFG Workshop on Nanoelectronics Prof. Dr. Katsuaki Sato Research Supervisor of a PRESTO* Project, JST Professor, Tokyo University of Agriculture and Technology *Precursory Research for Embryonic Science and Technology

Introductory • Welcome to Kyoto, ancient capital of Japan with a long tradition of culture, and with the state-of-the-art technology. • I have a special feeling here in Kyoto, since I spent my student life at Kyoto University.

About this Workshop • As presented by Mr. Takahashi this series of JST-DFG workshop started in 2006 by an initiative of the Japanese-German Joint Committee on Science and Technology Cooperation. • The first WS was held in Tokyo, the second in Aachen and the third is now starting here in Kyoto.

Scientific relations in Japan and Germany • In Edo period Japan learned medicine and natural history from German doctor Philipp Franz von Siebold who stayed in Japan from 1823 to 1828. • After Japan opened the window in Meiji Period about 150 years ago Japanese people learned not only science and technology but also many social systems from Germany. Hydrangea otakusa

After World War II • After World War II, both countries achieved rapid reconstruction of their society from ruins by marvelous growth in industrial section based on science and technology . • Although both countries are subjected to the strong influence of the United States, they always paid attention to their own culture.

Crisis of Nanotech Research in Japan and Germany (1) Publications in Nanotechnology Increase Rate to 2001 FY Number of Publications China US US Korea UK UK Germany China Japan Japan Germany Korea

Crisis of Nanotech Research in Japan (2) Budget for Nanotechnology Budget of Public Sector Increase Rate to 2001 FY US US 10 8 yen Japan Germany EU EU Germany Japan

Government-initiated research program in Germany • Nano-Initiative-Aktionsplan 2010 (Nov. 2006)

Research Areas of JST in Nanotechnology and Nanomaterials Fiscal Year Area Category Supervisor 2 3 4 5 6 7 8 9 10 11 12 13 14 1 CREST Ultrafast Nanodevices H.Sakaki 2 CREST Nanotech Devices K.Kajimura 3 CREST Nanofactory K.Gamou 4 CREST Nano Structural Materials H.Fukuyama NTVL 5 CREST Nanochemical and biological Materilas H.Sasabe 6 CREST Soft Nanomachine K.Hotani 7 CREST Self Organization K. Kaya 8 CREST Enviromental Nano Catalyst M.Misono 9 CREST Energy Conservation Nanomaterials A.Fijushima 10 PRESTO Integration of nano areas S.Ushioda 11 PRESTO Structure control and Function Y. Okamoto 12 CREST Nano interface S.Shinkai 13 PRESTO Interface Control M.Kawai 14 CREST Innovative manufacturing YHoriike 15 PRESTO Nanomanufacturing N.Yokoyama 16 CREST Next-generation Electronic Devices H.Watanabe 17 PRESTO Next-generation Device Materials K.Sato

PRESTO Project Materials and Processes for Innovative Next –generation Devices • This research area is intended to create innovative next- generation devices with concepts beyond conventional silicon technology represented by CMOS , and is inviting challenging research proposals to develop novel materials and processes which enable realization of high-speed, large capacity, and highly advanced processing, storage, and transfer of information, with particular consideration to environment, resources, and energy consumption problems. Japan Science and Technology Agency

2007 FY Researchers Japan Science and Technology Agency

Research Themes 2007FY M. Kasai （ Hokkaido U. ） Research on stochastic resonance nanodevices and their integration for novel noise-robust information processing systems E. Saito （ Keio U. ） Spintronics based on spin currents and spin-photon coupling in dielectrics S. Shiraishi （ Osaka U. ） Spin current control in molecules Y. Takahashi (NIMS) Development of half-metal at RT for spintronics devices T. Taniyama （ TIT ） Control of spin polarization and its application to tunable spin sources A. Tsukamoto （ Nihon U. ） Ultrafast manipulation and measurement of spin dynamics by femtosecond laser pulse N. Fukada (NIMS) Development of semiconductor nanowires for the realization of vertical three-dimensional semiconductor devices S. Murakami （ TIT ） Unified Theory of Spin and Heat Currents and its Applications T. Yasuda （ NIMS ） High-performance organic field-effect transistors using intrachain carrier transport along uniaxially aligned p-conjugated polymers A. Yamaguchi （ Keio U. ） Study in novel electromagnetic properties of modulated and/or periodic magnetic structure composed of nanoscale magnets K. Wakabayashi （ Hiroshima U. ） Design and Physical Properties Forecast of Nano- Carbon Electronic Devices Based on Computational Methods

2008 FY Researchers Japan Science and Technology Agency

Research Themes 2008FY R.Katayama (U. Tokyo) Novel Optical Functionality using Photonic Nanostructure of Polar Wide-gap Semiconductors I. Kawayama (Osaka U.) Creation of an optically-generated-flux-quantum nano-device with superconducting nanobridges Y. Kangawa (Kyushu U.) Fabrication of III-nitride substrate for optoelectronic integrated circuit and control of its heat transfer W. Kobayashi (Waseda U.) Development of materials for thermoelectronics T. Suzaki (TIT) New functionalities at the interfaces of wide-gap oxides M. Takenaka (U. Tokyo) Ge Nano Electro-Optic LSI for intrachip optical interconnects T. Nakaoka (U. Tokyo) Charge/spin/photon hybrid single-electron device based on quantum dot K. Hmaya (Kyushu U.) Dvelopment of single-electron spin transisotors with silicon- based nanostructures T. Fukumura (Tohoku U.) Wide-gap ferromagnetic semiconductor devices N. Mizuochi (Tsukuba U.) Quantum information devices by single paramagnetic color center in wide-bandgap semiconductor Japan Science and Technology Agency

An episode before fixing the Scope of WS • Dr. Yokoyama and I first proposed a program relating to electronic devices for next generation; more Moore, more than Moore and beyond CMOS. • Through exchange of opinions with Dr. Felser who proposed a program relating to materials- oriented researches we modified the program to the present state.

Sessions 1. Nanoscience and Nanomaterials for Future Electronic Devices: 6 lectures (January 21) 2. Nanoelectronics Device Technologies: 6 lectures (January 21) 3. Nanomaterials for Renewable Energy: 5 lectures (January 22) 4. Measurement and Characterization: 6 lectures (January 22) 5. Theoretical and Computational Approaches: 6 lectures (January 23)

Enjoy WS • The purpose of this WS is to provide a forum where researchers of nanotechnology and nanoscience from both countries become acquainted with each other, and make an opportunity to make new joint research plans for coming FY. • Active discussions in a warm and friendly atmosphere are strongly expected .

Enjoy Kyoto! • Please enjoy sightseeing and food in Kyoto during your stay, and feel a traditional Japanese atmosphere of the old capital.

Thank you for your kind attention.