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POWER CONVERTER MODULE Yang Xu North Carolina State University - PowerPoint PPT Presentation

A NEW BUSBAR EMBEDDED POWER CONVERTER MODULE Yang Xu North Carolina State University Email: yxu17@ncsu.edu Whole system (top view) DC connector V+ Cap holes DC connector V- AC load connector AC load connector Device gate terminals


  1. A NEW BUSBAR EMBEDDED POWER CONVERTER MODULE Yang Xu North Carolina State University Email: yxu17@ncsu.edu

  2. Whole system (top view) DC connector V+ Cap holes DC connector V- AC load connector AC load connector Device gate terminals

  3. Whole system (bottom view)

  4. Whole system (transparent view) Half bridge A Half bridge B

  5. System layer structures

  6. Part 1 – Upper Bus (top view)

  7. Part 1 – Upper Bus (bottom view) Fabrication Technology: Traditional DCB

  8. Part2- Bridge Configuration (top view)

  9. Part2- Bridge Configuration (bottom)

  10. Part2- Bridge Assembly Gate terminal Gate insulation Copper planar interconnect Gate ref/IGBT emitter IGBT chip Diode chip IGBT collector Interconnect Supporting element Aluminum contact pad

  11. Part3- Lower Bus (V+ bus) Bottom side Top side

  12. Temperature simulation  Assume each of the 8 chips (in this conceptual design )has a power dissipation of 50 w, bottom side is fixed to 20 degree C 

  13. Optional feature-embedded cooling pipe This is for showing the concept. The real design my have a U shape cooling pipe for each of the half bridge unit.

  14. Optional feature-embedded heat sink

  15. Optional feature-EZ mount  A press in type of assembly will be used for assembling the system by just pressing the upper and lower bus together.

  16. Other options  Vertical Gate Drive circuit board in top  Capacitor on top bus  Heat sink cover all bottom bus

  17. Summary of feature  Busbar in module  Busbar as heatsink  All planar interconnection  Embedded cooling element  Optimized capacitor hole location  Optimized gate terminal location  Half bridge unit configuration  Lower bus(heat sink) electrically hot

  18. Advantages  Super low interconnect inductance  Double sided cooling for power device  Very compact design  Allow gate drive circuit locate extremely close to power semiconductor device  Can be fabricated and assembled very easily  Flexible for deferent topology (single/3 phase VSI)

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