Photonic Crystals Photonic Crystals and Si Photonics and Si - - PowerPoint PPT Presentation

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Photonic Crystals Photonic Crystals and Si Photonics and Si - - PowerPoint PPT Presentation

Photonic Crystals Photonic Crystals and Si Photonics and Si Photonics Toshihiko Baba Toshihiko Baba baba@ynu.ac.jp Yokohama National University Yokohama National University http://www.dnj.ynu.ac.jp/baba-lab/babalabe.htm Photonic


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SLIDE 1

Toshihiko Baba Yokohama National University

Photonic Crystals and Si Photonics Photonic Crystals and Si Photonics

Toshihiko Baba

baba@ynu.ac.jp

Yokohama National University

http://www.dnj.ynu.ac.jp/baba-lab/babalabe.htm

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SLIDE 2

Photonic Nanostructures

High Index Contrast Structure: HIC

n1 n0 n1 n0 Total reflection Bragg reflection Bragg scattering

2D Wire Disk Mesa 3D 1D

1m

Brillouin zone

X X

  • U

W L K Γ X X J Γ

1μm 1μm 1μm

Photonic Crystals: PC

0.2μm

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SLIDE 3

Holey fiber with small mode size Mode size converter MUX by super prism and superlens Nanocavity drop switch Slowlight buffer

Photonic crystal slowlight waveguide

Nanolaser, nanocavity, slow light waveguide, negative refractive optics, etc. realize novel light emitters and light control devices

Slowlight amplifier Nanocavity cross-connect Nanocavity

  • converter

Nanocavity add switch Nanolaser signal source Integrated isolator Electronics Resonant photodetector Nanolaser for -converter

Innovation in Photonic Integration by Photonic Nanostructures Innovation in Photonic Integration by Photonic Nanostructures Innovation in Photonic Integration by Photonic Nanostructures

Photonic crystal nanocavity device Silicon photonics devices

PC and HIC Silicon photonics allow densely integrated advanced photonic chip

  • T. Baba, nature photonics 1, 22 (2007)
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SLIDE 4

Photonic crystal slab consisting of Airholes Airbridge membrane

Substrate

GaInAsP quantum well active layer Nozaki et al. EL 41, 15843 (2005); APL 88, 211101 (2006); OE 15, 7506 (2007)

Press released from OSA Hz + – 500 nm Point shift nanocavity Laser Mode

Room Temperature CW Photonic Crystal Nanolaser Room Temperature CW Photonic Crystal Nanolaser Room Temperature CW Photonic Crystal Nanolaser

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SLIDE 5

High Performance PC Nanolasers

RT, CW Lasing

Effective Pump Power P

eff [μW]

Irradiated Power P

irr [μW]

Intensity [a.u.] Intensity [10 dB/div] Wavelength [μm] 1.57 1.63 1.60 P

eff ~ 2.3 μW

40dB 50 1 2 3 (Nozaki, Kita and Baba, OE 15, 7506 (2007))

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SLIDE 6

High Performance PC Nanolasers

RT, CW Lasing

Effective Pump Power P

eff [μW]

Irradiated Power P

irr [μW]

Intensity [a.u.] Intensity [10 dB/div] Wavelength [μm] 1.57 1.63 1.60 P

eff ~ 2.3 μW

40dB 50 1 2 3 (Nozaki, Kita and Baba, OE 15, 7506 (2007))

Single QD Lasing (LT)

(Nomura et al., JSAP 31p-ZN-1 (2009))

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SLIDE 7

1μm

Passive Laser WG Active

Applications of Nanolaser

Light Source for Photonic IC

200 nm Passive Active PC Slab Air Clad. Air Clad.

(Watanabe and Baba, OE 16, 2694 (2008))

Chemical and Bio-Sensing

(Kita et al., OE 16, 8174 (2008); IPNRA, JMB3 (2009))

Cavity QED (Purcell enhancement, Rabi splitting,

single photon emission, quantum information)

1 0.1 0.3 0.2 0.7 0.5 Normalized Intensity 1 2 3 4 5 Time [ns] Wafer PC w/o cavity Point-shift nanocavity @ = mode RT, Pirr = 0.7Pth

(Baba et al. APL 85, 3989 (2004); Ota et al. APL 94, 033102 (2009))

Included in MEXT GCOE program operated by YNU and collaborated with Univ. Oulu

Wavelength [nm] Normalized Intensity [a.u.] 1615 1625 1635 nenv = 1.306 1.315 1.325 1.335 1.345 1.355 5 4 3 2 1

< 26 pm

Wavelength [nm] BSA Binding Glutaraldehyde Modification 1586 1588 1590 1592 Normalized Intensity [a.u.] 5 4 3 2 1 Micro-directional coupler with μm

  • rder length

Micro-branch Photonic crystal line defect waveguides Point-defect microlaser Micro-bend

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SLIDE 8

High-Power Singlemode PC Bandedge Lasers

2D DFB PC allows over 30 W singlemode lasing in large areas Narrow beam profiles controllable by PC engineering Ring shape FFP applicable to photon twizer and tight focusing over the diffraction limit

(Noda et al., Science 293, 1123 (2001); Nature 441, 946 (2006); Science 319, 445 (2008); JSAP 31a-ZN-1 (2009))

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SLIDE 9

Fabrication of 3D Photonic Crystals

Top Down Approach (Micromanipulation)

(Aoki et al. Nat. Mat. 2, 117 (2003); Nat. Photon. 2, 688 (2008))

Bottom Up Approach (Lithographic Tech.)

(Shoji et al. APL 76, 2668 (2000); Mizeikiz et al. OL 29, 2061 (2004))

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SLIDE 10

Slow light in photonic crystals

  • T. Baba, Nature Photonics 2, 465 (2008)

Si Air Si Channel

(after Baba et al., EL 35, 654 (1999))

PC Line Defect Waveguide

(after Notomi et al., PRL 87, 253902 (2001))

Observation of slow light

1 μm

Wavelength [m] Group Index ng 1.550 1.555 1.560 1.565 20 40 60 80 From F-P resonance From modulation phase shift

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SLIDE 11

1 μm L = 192 μm Branch Input WG Output WG Confluence Coupled Waveguide 2r1 = 0.240.26 μm 2r2 = 0.340.38 μm a = 0.46 μm

Photonic Crystal Coupled Waveguides (PCCW)

(Mori et al. OE 13, 9398 (2005); Kawasaki et al. OE 15, 10274 (2007)) Band shift in chirped structure

k k k

  • 0.29

0.30 a/2c 0.3 0.4 0.5 Even Odd k [2/a]

Slow Light

L i g h t L i n e

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SLIDE 12

20 40 60 80 100 Delay [ps] Δτ [ps] = 3.2 2.3 2.1 2.2 3.3 3.3 3.4 4.1 2.2 2.3 3.0 3.2 6.4 4.7 5.2 4.5 4.1 3.5 2.3 P [mW], x [μm] = 7, 140 7, 151 6, 164 7, 169 31, 19 31, 26 35, 35 40, 37 12, 189 24, 171 37, 172 27, 163 27, 154 27, 151 37, 147 37, 144 38, 140 52, 140 58, 140

74 ps

Normalized Cross-Correlation Intensity [a.u.] Δt Δt Intensity Intensity Δ (Baba et al., OE 16, 9245 (2008); Baba et al., Nature Photon. 2, 465 (2008); Adachi et al., OSA SL, SWA1 (2009)) Δ Δt ΔT Δt

Slow chirp Fast chirp

Heating

Tunable Delay in Slow Light Pulse

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SLIDE 13

Two Photon Absorption Self Phase Modulation

Optical Nonlinearity in LVLD Pulse

No Device

(Hamachi, Kubo, Baba, OL 34, 1072 (2009))

Nonlinearity is enhanced by SL pulse in LVLD waveguide (350 m length) TPA scales with ng

2 and >40-fold higher than Si photonic wire waveguide

eff [cm/GW] = 3 10 25 50 0.5 1.0 1.5 2.0 Input Peak Intensity Pin [W] Output Peak Intensity Pout [W] 0.5 1.0 ng ~ 30 ng ~ 30 ng ~ 8 ng ~ 8 1.89 0.75 0.30 0.12 Transmission [5 dB/div] Wavelength λ [μm] 1.551 1.551 1.554 Pin [W] = 1.551 1.554 1.554

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SLIDE 14

PC Nanocavity-Waveguide Coupled System

Ultrahigh-Q Nanocavity

(Tanabe et al. Nat. Photon. 1, 49 (2007); Takahashi et al. OE 15, 17206 (2007))

Nonlinear bistable switching

(Notomi et al. OE 13, 2678 (2005); OL 30, 2575 (2005))

Dynamic Tuning

(Tanaka et al. Nat. Mat. , 862 (2007))

Q factor up to 3,000,000 and photon storage of 2 ns Carrier-induced bistability, τ=100ps, Wth=10fJ Stopping optical pulse observed

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SLIDE 15

Negative Refraction in Photonic Crystals Negative Refraction in Photonic Crystals

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SLIDE 16

Functions Predicted from Dispersion Surfaces

(after Kosaka et al., PRB 58, 10096 (1998))

0.6 0.56 0.64 0.82 0.8 0.74 0.76 0.72 0.7 0.7 0.72 0.74

1 2 3 4 5 6

0.1 0.2 0.55 0.54 0.53

Isotropic Propagation Super prism Super lens Slow light Super- Collimation

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SLIDE 17

Observation of Negative Refraction

(Matsumoto et al., APL 91, 091117 (2007))

10 μm Deflection Angle θ [º] Wavelength λ [μm] 45 50 55 60 65 Plot: Experiment, Line: FDTD 1.50 1.60 1.55 2 r = . 3 μ m . 2 9 μ m . 2 7 μ m 1 μm 24º PC Si Slab Input WG λ = 1.37 μm PC Si Slab θ 1 μm

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SLIDE 18

Light Focusing in PC Superlens

PC slab superlens

15 10 5 L [m] 3 2 1 Position [m] Intensity [a.u.]

1

  • 10

10 2.0 m

(Matsumoto, et al. OL 31, 2776 (2006)) 0.5 μm = 1.305 μm

Intensity [a.u.]

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SLIDE 19

Photonic Nanostructures

High Index Contrast Structure: HIC

n1 n0 n1 n0 Total reflection Bragg reflection Bragg scattering

2D Wire Disk Mesa 3D 1D

1m

Brillouin zone

X X

  • U

W L K Γ X X J Γ

1μm 1μm 1μm

Photonic Crystals: PC

0.2μm

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SLIDE 20

Photonic Wire Waveguide Elements

(Sakai et al. JJAP 40, L383 (2001)) (Yamada et al. IEEE JSTQE 12, 1371 (2006))

SEM NFP

(Sakai et al. IEICE Trans.E85-C, 1033 (2002); JJAP 41, L1461 (2002))

Y Branch and H-Tree Bend

NFP = 1.55 m

(Fukazawa et al. JJAP 43, 646 (2004))

10.4 μm 1.6 μm 0.4 dB 30 dB

Intersection MMI Coupler MZ Interferometer

N = 50 L = 17.2 m 5 m (Ohno et al., JJAP 44, 5322 (2005))

Directional Coupler

(Yamada et al., IEEE PTL 18, 585 (2005)) (Tsuchizawa et al. EL 38, 1669 (2002))

Spot Size Converter

10 m = 1.55 m

(Xiao et al., JLT 26, 228 (2008))

Microring

(Bogaerts et al. OE 12, 1583 (2004))

Grating Coupler

(Yamada et al. IEICE Trans.E87-C, 351 (2004))

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SLIDE 21

Si Photonics Functional Devices

MUX/DEMUX (AWG)

10 μm 1.50 1.55 Wavelength [μm] Transmission [dB] 10 20 30 1.60

(Fukazawa et al., JJAP 43, L673 (2004); JJAP 45, 6126 (2006)) (Liu et al. APL 87, 011110 (2005))

Epitaxial Ge Detector

(Fang et al., OE 14, 9203 (2006))

III-V Hybrid Laser

20 GHz bandwidth (Yamada et al., IEEE PTL 18, 1046 (2006))

Nonlinear Elements

(FWM, Raman, TPA, SPM...)

Modulator

10 Gbps Eye Pattern (Liao et al., OE 13, 3129 (2005))

Delay Line and Optical Buffer

(Xia et al., Nature Photon. 1, 65 (2007))

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SLIDE 22

Open Foundry Now Available

  • Sept. ’08

May ’08 Sept. ’08 (pre. ’06-) e-beam100 kV

  • photo. 248 nm
  • photo. 193 nm

WG width > 80 nm > 170 nm > 120 nm fIber coupling facet with SSC (< 2.5 dB/facet) facet with SSC (< 2.5 dB/facet) facet with SSC, grating coupler (< 5.2 dB/facet) NTT-ATN (Japan)

JSPS Center of Si Photonics Prog.

Japan: U.Tokyo, Yokohama U., etc. USA: MIT, Rochester, etc. Europe: IMEC etc.

Test suttle run by NTT-ATN

8000 USD / 2 chips, 6 dB loss inc. lens coupling started from lithography ? available available lithography Silicon Photonics MPW Prototyping/IME (Singapole) ePIXfab / IMEC (Bergium)

Air SSC

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SLIDE 23

PC Nanolaser PC Negative refractive optics

Focusing, image formation, beam steering, collimating

Compensation of aberration possible

HIC Silicon photonics device

μ-components based on Si photonic wire waveguide Functional devices, applications to opt. interconnects Foundry service now available

Topics

PC Slowlight waveguide

Wideband dispersion-free slow light pulse available Tunable delay available by TO effect Dynamic control expected for more delay Ultralow threshold RT CW lasing and Purcell effect A/P integation for photonic integrated chip Hight resolution sensing available