NEW OPPORTUNITIES IN PHOTONICS NEW OPPORTUNITIES IN PHOTONICS - PowerPoint PPT Presentation

NEW OPPORTUNITIES IN PHOTONICS NEW OPPORTUNITIES IN PHOTONICS APPLICATIONS : MICROPLASMA DEVICES APPLICATIONS : MICROPLASMA DEVICES AND ARRAYS FABRICATED IN SEMICONDUCTORS, AND ARRAYS FABRICATED IN SEMICONDUCTORS, CERAMIC AND POLYMER/METAL MULTILAYER CERAMIC AND POLYMER/METAL MULTILAYER STRUCTURES STRUCTURES J. G. Eden J. G. Eden University of Illinois University of Illinois University of Illinois Laboratory for Optical Physics and Engineering

MICROPLASMAS : AT THE INTERSECTION OF OPTOELECTRONICS, MICROFABRICATION, AND PLASMA SCIENCE PLASMA SCIENCE • New realm of discharge operation and characteristics MICROPLASMAS • Broad array of applications MATERIALS SCIENCE, PHOTONICS MICRO- AND NANOFABRICATION University of Illinois Laboratory for Optical Physics and Engineering

University of Illinois Laboratory for Optical Physics and Engineering SUMMARY µ m) Glow discharges confined to mesoscopic dimensions ( < 10 ~ 100 µ m) Glow discharges confined to mesoscopic dimensions ( < 10 ~ 100 → picoliters Microcavity volumes: nanoliters → picoliters Microcavity volumes: nanoliters A variety of atomic and molecular emitters are available (VUV ~ IR) A variety of atomic and molecular emitters are available (VUV ~ IR) Can be operated continuously at gas pressures beyond one atmosphere at Can be operated continuously at gas pressures beyond one atmosphere at power loadings exceeding 100 kW/cm 3 3 power loadings exceeding 100 kW/cm Leveraging MEMs and semiconductor processes for fabrication of Leveraging MEMs and semiconductor processes for fabrication of devices and arrays devices and arrays Emphasis on processes amenable to mass production Emphasis on processes amenable to mass production

University of Illinois Laboratory for Optical Physics and Engineering GENERAL CONSIDERATIONS GENERAL CONSIDERATIONS Macroscopic Thin Film Structure Annular Cathode d Disk Anode Discharge microcavity dimensions ( d ) on µ m scale As d ↓ , surface area / volume ↑ : Importance of microcavity design

Semiconductor Devices

University of Illinois Laboratory for Optical Physics and Engineering REPRESENTATIVE Si DEVICE STRUCTURES REPRESENTATIVE Si DEVICE STRUCTURES anode dielectric cathode DRIE Electrode Planar Si Electrode Inverted Pyramidal Electrode

University of Illinois Laboratory for Optical Physics and Engineering SEMICONDUCTOR ARRAYS SEMICONDUCTOR ARRAYS Inverted Square Pyramidal Cathode 400 Torr Ne 1200 Torr Ne

University of Illinois Laboratory for Optical Physics and Engineering EMISSION UNIFORMITY: DC EXCITATION, ATOMIC AND MOLECULAR EMITTERS Ne Ar Ar/N 2

University of Illinois Laboratory for Optical Physics and Engineering LARGE ARRAYS FOR AC EXCITATION

University of Illinois Laboratory for Optical Physics and Engineering 200 × 200 ARRAY : 4 cm 2 OF ACTIVE AREA

University of Illinois Laboratory for Optical Physics and Engineering ARRAY INTENSITY CONTOUR 200 × 200 Arrays Uniformity : Better than 10 %

University of Illinois Laboratory for Optical Physics and Engineering VOLTAGE-CURRENT CHARACTERISTICS : 200 × 200 ARRAY 8 0 0 2 0 0 x 2 0 0 1 0 k H z 5 0 0 T o rr 7 0 0 6 0 0 7 0 0 V o lta g e (V p -p ) 9 0 0 6 0 0 5 0 0 4 0 0 1 5 2 0 2 5 3 0 C u rre n t (m A , R M S )

University of Illinois Laboratory for Optical Physics and Engineering POWER CONSUMPTION - 2 ) 7 0 0 T o rr N e 1 1 0 R M S - c m 5 k H z R M S ) 2 T o ta l P o w e r C o n s u m p tio n ( W N o r m a liz e d P o w e r C o n s u m p tio n ( W 1 0 1 0 1 5 0 1 0 1 1 0 -1 1 0 0 1 0 -2 1 0 0 1 2 3 4 5 1 0 1 0 1 0 1 0 1 0 1 0 N u m b e r o f P ix e ls

University of Illinois Laboratory for Optical Physics and Engineering A QUARTER MILLION PIXEL ARRAY : 25 cm 2 OF ACTIVE AREA

University of Illinois Laboratory for Optical Physics and Engineering 500 × 500 ARRAY OPERATING in Ne 700 Torr Ne

University of Illinois Laboratory for Optical Physics and Engineering 500 × 500 ARRAY OPERATING in Ne 700 Torr Ne

University of Illinois Laboratory for Optical Physics and Engineering PIXEL UNIFORMITY Attenuation with ND Filter

University of Illinois Laboratory for Optical Physics and Engineering DRIE Si Devices (10 µ m) 2 Single (30 µ m) 2 10 X 11 arrays (30 µ m) 2 Single 900 Torr Ne

University of Illinois Laboratory for Optical Physics and Engineering I-V Characteristics (10 µ m) 2 Si DRIE Device 3 3 0 7 0 0 T o r r N e 8 0 0 9 0 0 3 2 5 1 0 0 0 1 1 0 0 3 2 0 V o lta g e (V ) 3 1 5 3 1 0 10 µ m Ni 3 0 5 Polyimide 3 0 0 200 µ m SiO 2 Si 2 9 5 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 1 .8 2 .0 2 .2 2 .4 2 .6 2 .8 3 .0 C u rre n t ( µ A )

University of Illinois Laboratory for Optical Physics and Engineering Xe/O 2 Microdischarges in 30 µ m DRIE devices O 2 10 mTorr

University of Illinois Laboratory for Optical Physics and Engineering Excitation of a Microdischarge Excitation of a Microdischarge with a Reverse-Biased PN Junction with a Reverse-Biased PN Junction Plasma N Depletion W Region P d = 300 µ m, 180 V, 0.45 mA 200 Torr Neon

University of Illinois Laboratory for Optical Physics and Engineering 25 × 25 Pixel Array in Glass

University of Illinois Laboratory for Optical Physics and Engineering Fresnel Arrays Fresnel Arrays 400 Torr Ne Device Separation < Coherence Length

University of Illinois Laboratory for Optical Physics and Engineering MICRODISCHARGE PHOTODETECTORS MICRODISCHARGE PHOTODETECTORS With Illumination 246.7V, 0.035 mA 234.3 V, 0.113 mA (50 m) 2 device, 500 Torr Neon

University of Illinois Laboratory for Optical Physics and Engineering Photosensitivity (100 µ m) 2 Device 500 Torr Ne 10 0 Photosensitivity (A/W) λ = 780 nm 10 -1 Active Plasma Device Entire Device Die 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 Input Power ( µ W)

University of Illinois Laboratory for Optical Physics and Engineering Spectral Response 4.0 DCD = 36 mA/cm 2 DCD = 27 mA/cm 2 Photosensitivity (A/W) DCD = 62 mA/cm 2 DCD = 58 mA/cm 2 3.0 (50 µ m) 2 Device, 800 Torr Ne 2.0 (100 µ m) 2 Device, 500 Torr Ne 1.0 0.0 400 500 600 700 800 900 1000 1100 Wavelength (nm)

University of Illinois Laboratory for Optical Physics and Engineering Spectral Response 4.0 Scaled APD Response (100 µ m) 2 , Active Plasma Device (50 µ m) 2 , Active Plasma Device Photosensitivity (A/W) 3.0 2.0 1.0 0.0 400 500 600 700 800 900 1000 1100 Wavelength (nm)

University of Illinois Laboratory for Optical Physics and Engineering Band Diagram

Ceramic Devices

University of Illinois Laboratory for Optical Physics and Engineering MULTISTAGE, MONOLITHIC MULTISTAGE, MONOLITHIC CERAMIC MICRODISCHARGE DEVICE CERAMIC MICRODISCHARGE DEVICE d anode pad anode cathode anode cathode ceramic layer cathode pad Pre-fired Fired

University of Illinois Laboratory for Optical Physics and Engineering PLANAR ARRAY ELECTRODE GEOMETRY µ m Electrode spacing is ~100 µ m Electrode spacing is ~100 Parallel plate annular Parallel plate annular electrode design yields more electrode design yields more electrode area electrode area Better device stability Better device stability • Longer lifetime • Longer lifetime Reduced field enhancement • Reduced field enhancement Individually-ballasted pixels Individually-ballasted pixels Fabrication by screen printing Fabrication by screen printing

University of Illinois Laboratory for Optical Physics and Engineering 300 Torr Xe

University of Illinois Laboratory for Optical Physics and Engineering LINEAR ARRAY LINEAR ARRAY CW or Pulsed Excitation CW or Pulsed Excitation µ m 360 µ Bore: 80 X m 2 2 Bore: 80 X 360 Active Length ~1 cm Active Length ~1 cm

University of Illinois Laboratory for Optical Physics and Engineering 600 Torr Ne

University of Illinois Laboratory for Optical Physics and Engineering Gain at 460.3 nm: Xe + 600 500 300 V 400 300 200 100 0 2500 Intensity 2000 500 V 1500 1000 500 0 5000 4000 800 V 3000 2000 1000 0 440 450 460 470 480 490 Wavelength (nm)

University of Illinois Laboratory for Optical Physics and Engineering Nanoporous Dielectrics for Microcavity Devices Nanoporous Dielectrics for Microcavity Devices Pore diameter: tens~hundreds of nm

University of Illinois Laboratory for Optical Physics and Engineering Multilayer Al/Al 2 O 3 Microplasma Array Multilayer Al/Al 2 O 3 Microplasma Array 100 µ m V Al 2 O 3 Al 200 µ m

University of Illinois Laboratory for Optical Physics and Engineering × 3 Array Operating in Ne and Ar/N 3 × 3 Array Operating in Ne and Ar/N 2 3 2 700 Torr Ne 500 Torr Ar/N 2 (3%)

Flexible Device and Arrays

University of Illinois Laboratory for Optical Physics and Engineering Thin Film Self-Ballasted Microdischarge Arrays d = 100 µ m Dielectric Anode V 30 ~ 40 µ m Cathode Layer (Ni) Dielectric Conducting Substrate Resistive Layer

University of Illinois Laboratory for Optical Physics and Engineering d = 100 µ m, 500 Torr Ne 20 mm 148.2V DC, 15 mA

University of Illinois Laboratory for Optical Physics and Engineering µ m DEVICES 13 ~ 30 µ m DEVICES 13 ~ 30 Metal/Polymer Structure 30 µ m dia. Microdischarge Device 30 µ m 30 µ m ND filter