Guus Rijnders Chair Inorganic Materials Science Scientific Director MESA+ Institute for Nanotechnology University of Twente, The Netherlands MESA+ INSTITUTE BRIDGING DISCIPLINES TO REALIZE NANO ENABLED SOLUTIONS FOR GRAND CHALLENGES
FACULTIES • Science & Technology • Engineering Technology • Electrical Engineering, Mathematics, Computer Science • ITC: Geo information • Behavioral, Management & Social Sciences INTER-DISCIPLINARY RESEARCH • Digital Society Institute (robotics, smart cities) • MedTechCentre (Health, new medicines) • MESA+ (Nanotech, new materials,)
IMPACT RESEARCH AREAS Research • • ELECTRONICS • Education • PHOTONICS • Business • FLUIDICS • Society • Materials, Devices & Systems APPLICATION AREAS • Responsible Research & • Health Innovation • ICT • Sustainability INFRASTRUCTURE NanoLab • Specialized group labs • Shared open-acces • MESA+ INSTITUTE BRIDGING DISCIPLINES TO REALIZE NANO ENABLED SOLUTIONS FOR GRAND CHALLENGES
MESA+ Nanolab High Tech Factory ECOSYSTEM UNIVERSITY OF TWENTE
NANO for NANO for NANO for ICT HEALTH SUSTAINABILITY Low energy electronics Batteries • • Lab/organ-on-chip • Emerging materials Solar to fuel • • Sensing • Neuromorphic computing Water technology • • Food • • Bits & Brains Negative Emission Tech • Digital twin • Beyond CMOS Resource efficiency • • Photonic integrationtechnology • MESA+ APPLICATION AREAS
NANO for ICT Darwin on a chip - MESA+ Institute together with CTIT Institute have demonstrated working electronic circuits that have been produced in a radically new way, using methods that resemble Darwinian evolution. The size of these circuits is comparable to the size of their conventional counterparts, but they are much closer to natural networks like the human brain.
NANO for ICT World's most narrowband diode laser on a chip - MESA+ in collaboration with Lionix Company developed the world’s most narrowband diode laser on a chip exhibiting a quantum limited spectral bandwidth of less than 300 Hz. This laser concept represents a breakthrough in the fast-growing field of photonics, and will bring applications such as 5G internet and accurate GPS closer.
NANO for HEALTH e-Nose - A fast and inexpensive breath test for early detection of diseases such as asthma and lung cancer. Our aim is to develop a device that detects exhaled biomarkers and then provides a diagnosis. As one of the few in the world, we have both the expertise and the technology to build such a sensitive device. Guus Rijnders: 'My goal is to use my expertise in nano-electronic materials to make people better or prevent people from becoming seriously ill'
NANO for HEALTH Urine test for various types of cancer - Detecting cancer of various types, in a very early stage and using a simple urine sample. Research by University of Twente and the VU University Medical Center Amsterdam led to a new approach using nanotechnology. Together with a new startup company NanoMed Diagnostics, our researchers will further develop this towards a test that is ready for clinical use.
MESA+ NANOLAB • Open-access Infrastructure (TRL1-6) • State-of-the art equipment • 1250 m2 cleanroom, nanofabrication and characterization (incl bionano) • Education, Research and Business
NANOLAB an open-access dual use model supporting platform technologies: • Materials: electronic/neuromorphic computing, devices, transistors, … • Photonics: waveguide, photonic devices, XUV mirrors, … • Fluidics: flow sensors, lab/organ-chip-chip, devices, reactors, .. • MEMS: piezo mems, actuators, sensing, membranes, cantilevers, needles, … • 2D/3D-nanostructures : nanowires, quantum dots, membranes, nano-apertures ..
Highlights NanoNextNL programme INNOVATION & COLLABORATION NETWORKS
INNOVATION & COLLABORATION USERS NANOLAB & MESA+ SPIN-OFF MESA+ SPIN-OFF COMPANIES
INNOVATION & COLLABORATION EXAMPLES INDUSTRY COLLABORATION
HIGH TECH FACTORY SHARED PRODUCTION FACILITY Cleanroom, high-tech labs and offices micro- and nanotechnology based production • Bioburden-free production and assembly • HIGH TECH FUND Equipment fund
Foundries Pilot lines Corporate incubation MESA+ NanoLab programmes Open-Access Production facilities Industry 1 2 3 4 5 6 7 8 9 Basic Technology Exp Proof of Technology Technology Demo in Demo in System Successful Principle Concept Concept Validation in Validation Relevant Operational Complete and Mission Observed Formulated lab Relevant Environment Environment Qualified Operations Environment Collaboration NanoLabs Various partners TRL 6-8 among which ……… MESA+ NANOLAB INFRA FOR RESEARCH AND INNOVATION
ME MESA+ STAFF
Atomic level control enables the design STEM: SrTiO 3 -LaAlO 3 of complex functional materials TEM: Superconducting superlattice, BaCuO-SrCuO Exploit the wide range of physical properties available in (complex) oxide materials Mixed oxides or Solid solutions Layered structures Superlattices Artificial constructed materials Liao, Z., et al, GR, Nature materials. 10.1038/NMAT4579 M. Huijben, et al, GR, Adv. Funct. Mater. 23 (2013) GR, D.H.A. Blank, “Build your own superlattice”, Nature 433 (2005) 369-370 STEM: SrTiO 3 -(La,Sr)MnO 3
ABO 3 perovskite structure Cubic LaAlO 3 : 3.780 Å SrTiO 3 : 3.905 Å SrRuO 3 : 3.93 Å PbTiO 3 : 3.90Å
Tune properties in complex oxide materials La 0.5 Sr 0.5 MnO 3 SrMnO 3 Chemical e L c a i t t t t a i c L e Dimension g n i l p u o Thickness C Symmetry
Important innovations for epitaxial complex oxide growth Pulsed Laser Deposition with high-pressure RHEED Epitaxial growth: Temp.: 500-950 o C PO 2 : 10 -6 – 10 0 mbar Dijkkamp, Venkatesan, et al APL 51 (1987) 619 Rijnders, Koster, Blank et al., APL 70 (1997) 1888-1890 But also: MBE e.g. Schlom (Cornell) et al, Sputter deposition e.g. Triscone (Geneva) et al,…...,
Important innovations for epitaxial complex oxide growth Single terminated perovskite substrates SrTiO 3 : surfaces with vicinal unit-cell steps with atomically flat terraces Koster et al. Appl. Phys. Lett 73 (1998) 2920 Kawasaki et al. Science 226 (1994) 1540 single TiO 2 termination 250 nm Deposition of one unit cell of SrO on TiO 2 :SrTiO 3 26 pulses at 10 Hz (4 Pa O 2 , 780 o C) 500 nm single SrO termination
PLD kinetics ~ 0.1 – 2 sec. Laser pulse Deposition pulse Supersaturation Growth Deposition and Growth are separated in time: This enables measurement of the kinetic parameters at growth conditions by monitoring the decay of the adatom density between the deposition pulses.
Oxide thin film growth: Growth kinetics layer-by-layer growth RHEED intensity during homoepitaxial SrTiO 3 growth
Understanding Growth during Pulsed Laser Deposition Fast deposition during one pulse. -high supersaturation leads to formation of small islands. -probability of nucleation on top of these small island is low. Unit cell layer-by-layer SrTiO 3 growth
Atomic level control enables the design of complex functional materials Exploit the wide range of physical properties TEM: Superconducting superlattice, BaCuO-SrCuO available in (complex) oxide materials LSMO LSM O Mixed oxides or Solid solutions STO Layered structures Superlattices Artificial constructed materials STO NG O NG 1 nm O NdGaO 3 -SrTiO 3 -(La,Sr)MnO 3 LaAlO 3 -SrTiO 3 interface Liao, Z., et al, GR, Nature materials. 10.1038/NMAT4579 M. Huijben, et al, GR, Adv. Funct. Mater. 23 (2013) GR, D.H.A. Blank, “Build your own superlattice”, Nature 433 (2005) 369-370
Pulsed Laser Deposition: From Lab-scale to Industrial-scale Up to 4“ Up to 8“
All-oxide (PZT) piezoMEMS by Pulsed Laser Deposition ( a )-( b ) Fabrication process of epitaxial PZT thin-film capacitors using PLD on SOI wafers ( c ) and ( d ) Schematic illustration of the surface micromachining process.
Applications of PiezoMEMS, using epitaxial PZT on Si. BioMEMS pMUT Understanding: functional properties of Pb(Zr,Ti)O 3 films Inkjet on silicon Energy scavengers
Epitaxial PZT films on GaN Ideal high power FET: Low R on and high breakdown voltage V br 𝑀 𝑺 𝒑𝒐 = 𝑓𝑜𝑋𝝂 Breakdown voltage High power field effect transistor
Non-uniform electric field distribution induced low breakdown voltage Peak electric field at gate edge lower the breakdown voltage
High Dielectric Materials
Growth of PZT on GaN B PZT [111] B B A A A Face-center O Perovskite cubic PZT O a [110] =2.86Å O 4% mismatch O 10% mismatch Mg MgO [111] Mg Oxide/non-oxide MgO O Ga a [110] =2.98Å GaN [0001] 7% mismatch GaN N Ga a=3.19Å N Hexagonal Usually, a buffer layer to reduce lattice mismatch is required to get high quality PZT.
Epitaxial growth of PZT on GaN 3 um 3 um 2.4 2.2 (without MgO) 2.0 1.8 1.6 1.4 FWHM 1.2 1.0 0.8 0.6 0.4 MgO PZT 0.2 MgO 1.67 um 0.0 0 2 4 6 8 10 12 14 120 MgO Thickness (nm) GaN Si GaN GaN PZT (111) FWHM: MgO PZT (222) 0.23 degree Intensity Si Intensity PZT FWHM: 0.54 degree 12s -180 -120 -60 0 60 120 180 240 20 30 40 50 60 70 80 90 2 Theta Phi We can get high quality PZT films by ultrathin MgO buffer layer.
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