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Juzer Vasi National Centre for Photovoltaic Research & Education - PowerPoint PPT Presentation

Indian Institute of Technology Bombay Juzer Vasi National Centre for Photovoltaic Research & Education (NCPRE) & Solar Energy Research Institute for India and the US (SERIIUS) IIT Bombay Overview of NCPRE and SERIIUS Photovoltaics


  1. Indian Institute of Technology Bombay Juzer Vasi National Centre for Photovoltaic Research & Education (NCPRE) & Solar Energy Research Institute for India and the US (SERIIUS) IIT Bombay

  2. � Overview of NCPRE and SERIIUS � Photovoltaics Technologies � Research in Silicon Technologies � Conventional mono / multi Si � Aluminium Oxide Passivation � Silver replacement � Sawing � Non ‐ conventional Silicon � Thin Film crystalline silicon � Si nanocrystal tandem junction � Si nanowire � Research in other Materials � Earth ‐ abundant materials – CZTS � Perovskites � Flexible Glass Substrates � Conclusions

  3. � NCPRE set up at IIT Bombay in October 2010 � 5 year Project funded by MNRE � Multidisciplinary – 50 faculty investigators from 13 Depts � Strong Education + Research thrust NCPRE Characterization, Research Education Modeling & Simulation www.ncpre.iitb.in Solar PV New Systems & Materials & Si Solar Cells Modules Devices

  4. � SERIIUS set up October 2012 � Leading universities, research laboratories and industries from India and USA � 5 year project funded by DST (India) and DOE (USA) www.seriius.org

  5. Our Team:

  6. http://www.i-micronews.com/

  7. � Silicon (mono/multi) is the most mature technology � It has seen steep fall in prices in recent years � Can the prices decrease further? ITRPV 2012

  8. � AlO x for p ‐ Si surface passivation � Negative charge repels electrons, good interface � By ALD (slow process) or DC sputtering (at IITB) Anil and Meenakshi, IITB Meenakshi et al., IEEE E JPV, 2013 Meenakshi et al., IEEE PVSC, 2013

  9. � Copper much cheaper than silver � Problems � Copper is a lifetime killer; it oxidizes – extra protection layers � More complex processing Silver per cell (g/cell) ITRPV 2012

  10. � Improved wafer slicing techniques can give thinner wafers, higher throughput, lower kerf loss � Diamond wire sawing, Wire ‐ EDM Throughput for diamond wire sawing ITRPV 2012 and slurry based sawing

  11. � Wire Electrical Discharge Machining (WEDM) � Low kerf loss; 100 micron wafers possible Upper wire guide Dongre & Clamp Silicon ingot Joshi, IITB (75 mm square) Brass wire (Diameter: 100 µm) Lower wire guide Machine table

  12. � 20.1% Thin Film crystalline Si solar cells on flex substrates � Solexel’s patented process � Reusable silicon wafer Solexel www.solexel.com

  13. Wires by etching Deposition of 500 nm diameter PS beads was done by spin coating Size of beads was reduced by O 2 plasma Si etched by using DRIE chemistries of C 4 F 8 and SF 6 Residual PS beads removed using Toluene solution N ‐ poly is deposited on Si Nano Wires ITO deposition is done using metal Sputter System

  14. O 2 ashing of beads Dispersal of beads Deep reactive ion etching of nanowires ITO deposition N-polySi deposition Anil Kottantharayil, IIT Bombay, unpublished

  15. J SC = 16.4 mA/cm 2 , V OC = 2282 mV, FF = 84.3 %, η = 31.6% . Ga 0.35 In 0.65 P 1.67 eV Ga 0.83 In 0.17 As 1.18 eV Ge 0.66 eV W. Guter et al., Applied Physics Letters , vol. 94, no. 22, p. 223504, 2009.

  16. Si Nanocrystals (Quantum Dots) in a SiO 2 matrix. Varying the size of the QDs changes their bandgap. All-Si 3-cell Multijunction Tandem Solar Cell E.C. Cho et al., Advances in Opto Electronics , vol. 2007, pp. 1-11, 2007. M . Green, MRS Spring Symposium , San Francisco, 2006

  17. Mavilla Narasimha Rao, IIT Bombay

  18. � “Earth ‐ abundant” materials � 11% cells achieved at IBM Schematic of CZTS solar cell (inset) and SEM J-V Characteristics of solution processed of solution processed CZTS cell (Mitzi et al., CZTSSe cells of Mitzi et al. (IBM) with varying IBM) S and Se composition ratio Mitzi et al. Adv. Mater. 2010, 22, E156–E159

  19. Perovskite sensitized solar cell 0.0 0.2 0.4 0.6 0.8 1.0 16 16 (it replaces the dye in DSSC) 2 ) 14 14 Current Density (mA/cm Gratzel (HOPV 2013) � 14.1% 12 12 10 10 8 8 Mixed Halide Organometal Perovskites 6 6 CH 3 NH 3 PbI 2 X perovskites (X = Cl, Br, I) 4 4 2 2 0 0 0.0 0.2 0.4 0.6 0.8 1.0 Voltage(V) 5% perovskite sensitized solar cell at IIT Bombay (Sarkar)

  20. Planar configuration of Vapour deposited and spin coated p-i-n cell configuration “Efficient planar heterojunction perovskite solar cells by vapour deposition” by Current-density/voltage curves of the M. Liu, M. B. Johnston & H. J. Snaith best-performing solution-processed and Nature (2013) doi:10.1038/nature12509 vapour-deposited planar heterojunction Received:19 June 2013 Accepted: 25 July 2013 perovskite solar cell Published online 11 September 2013 “over 15%” efficiency

  21. � 100 micron thick flexible glass substrates from Corning � Processing temperatures of ~ 500 C possible � Roll ‐ to ‐ roll processing � Ideal for ink ‐ based processing

  22. August 2013 gust 2013 Source: NREL

  23. � New developments in photovoltaic technologies � Research continues for silicon as well as new materials; new processing � Some exciting developments recently � Thin Film Crystalline Si � Perovskite based solar cells � Research on many of these going on at IIT Bombay through NCPRE and SERIIUS

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