Enabling High Frequency Electronics Ernesto Limiti ARES and Dipartimento di Ingegneria Elettronica, Università degli Studi di Roma Tor Vergata limiti@ing.uniroma2.it EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014
ARES and High Frequency Electronics • ARES ARES Consor Consortium ium has its main facilities and competences in high-frequency electronics at the Department of Electronic Engineering (DIE) of the University of Roma Tor Vergata (the building where the meeting is held). • The group at the DIE is composed by more than 20 people, including permanent staff (professors, researchers, technicians) and post-doc/PhDs. • The heritage in microwaves and millimeter wave techniques dates back to the early ‘80s, thus summing up to more than 30 years experience. EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 2
ARES Activities - 1 Two main directions, namely • Device/subsystem vice/subsystem characterization characterization and nd modelling modelling: linear, non-linear and noise up to 110GHz (and above), scaleable, bias- dependent modelling with different approaches (equiv equivalent- lent- circuit, black-bo circuit black-box, physical physical). • Circuit Circuit and nd subsystem subsystem design esign: Amplifiers (PAs, LNAs, VGAs, DPAs ...), Mixers (resistive, passive, active …), frequency multipliers, multifunction (Core chips, TR chips, Integrated Receivers …) adopting state-of-the-art design methodologies. Long-track experience in Hybrid brid as well as MMIC MMIC design with many foundries (SLX, UMS, OMMIC, NGS, TRW, Triquint, Raytheon, …). EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 3
ARES Characterization Facilities - 1 Tor Vergata • 2 Vector Network Analysers (HP 8510C 0.05-50 GHz and Anritsu 37XXXD, 0.05-65 GHz, extended to 110 GHz) • 2 Spectrum Analyser (HP 70000 DC-40 GHz, Agilent PSA E4448A 3Hz- 50GHz) • Noise Measurement System (HP8970B-HP8971C DC-26.5 GHz, with proprietary amplified SSB extension to 40 GHz) • 2 Elettromechanical Tuners (Focus 0.08-18 GHz e 3-50 GHz) • Digital Sampling Oscilloscope (TekTronix up to 50 GHz) • I-V Pulsed Measurement System (GaAs Code) • Power Amplifier (AR 0.8-4.2 GHz - 25 W) • Synthesised Sources (2 Anritsu MG3692A 2-20 GHz e HP 83640A DC-40 GHz) • Vector Signal Source (Agilent E4438C 250 kHz-6 GHz) • Probe Stations (Cascade Microtech RF-1 and proprietary semi-authomated one, equipped with anti-vibrating tables) • Cryogenic Probe Station (down to 20 K, proprietary) • Test-fixtures (Wiltron, Agilent, …) EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 4
ARES Characterization Facilities - 2 Closed Closed Loop Loop Cryo pr probe station obe station (do (down to 20K) n to 20K) Access to ccess to Activ tive Harmonic onic Load-P Load-Pull ull Access to ccess to Phase Phase noise oise char characterisation acterisation PHASE NOISE DATA ACQUISITION SPECTRUM E5052A SIGNAL ANALYZER AND SOURCE ANALYZER S-Par &N S-P r &Noise oise integr integrated ated Test B est Bench nch POWER METER Computer Controlled POWER AND FREQUENCY DATA ACQUISITION BANDPASS FILTER Microwave Tuner S3c AT 6.5 GHz SP4T CIRCULATOR CH 1 T3 DIRECTIONAL DIRECTIONAL S3 NS COUPLER COUPLER 50 Ohm Computer Controlled Computer Controlled Microwave Tuner Microwave Tuner ISOLATOR ISOLATOR VNA BIAS TEE BIAS TEE BIAS TUNER TUNER BIAS RCVR T1 T2 DUT TERM TEE IN OUT TEE AND AMPLITUDE TUNING DPDT SOURCE-PULL BLOCK OUTPUT BLOCK LOOP FREQUENCY S2 S1 Z IN TUNING Z OUT TUNING DUT Reference Planes Probe Station Gate/Base On Wafer Drain/Coll CH 2 Bias Network DEVICE Bias Supply VNA Reference Planes PC SOFTWARE CONTROL IC/ID ACQUISITION AND DATA ACQUISITION EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 5
ARES Activities - 2 ARES ARES facilities are clearly used for internally-funded and coordinated basic research, and are very often adopted to support external companies for • Technology assessment • Technology optimization ( realise-characterise-model loop) • Technology development • Realized subsystem characterization • Active/passive device model extractions • PDKs development and verification • ad-hoc modelling EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 6
ARES Activities - 3 Examples amples : • KorriGan rriGan : first large European-scale GaN project, in which MECSA acted (also) as device modelling center for Selex, III-V Lab and QinetiQ technologies, with evolving technologies. GARANTE : Italian MoD project for 0.25 m GaN • GARANTE technology assessment (Selex ES). agas : ASI project for Space qualification of 0.25 m • Quagas GaAs technology (Selex ES). raSCREEN : FP7 project, within which a 0.04 m • TeraSCREEN mHEMT technology is developed (OMMIC). • In the past, several examples including COSMIC, COSMIC MANPO MANPOWER ER, ESPRIT ESPRIT IV IV European projects. EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 7
ARES Activities - 4 … but ut also also technological technological investigations: nvestigations: • Physical ysical simulation imulation and and modelling odelling (Monte Carlo, Drift- diffusion …), using both commercial and ad-hoc simulation tools. • Thermal simulation Thermal simulation and and modelling odelling (by using commercial and ad-hoc simulation tools) • Thermal Thermal characterization characterization (nonlinear thermal impedance measurements) • Basic sic technological echnological exploration exploration (e.g. different semiconductor alloys and devices with non-conventional operating principles, such as Di Diamond) EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 8
ARES Activities - 5 • Regarding microwave circuit design, the research focus has been historically directed towards Design Methodologies for high-efficiency transmitting subsystems and high performance receivers. • The heritage of ARES as circuit design center dates back to the early ’90s with the COSMIC FP2 project (monolithic transimpedance amplifier design) and continues since then with the participation to many projects, both national and international, public- or privately funded. • All the major CAD tools are available (circuit, system and EM-oriented), also for commercial commercial use. • A representative list is attempted in the following, as an example of ARES capabilities and offer. EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 9
EDA project KorriGAN - 1 Development of G lopment of GaN N HEMT HEMT Technology in E chnology in Europe ope (K (KorriGAN) orriGAN) , , (2005-2009). (2005-2009). • To take advantage of take advantage of high po high power r densities densities and po and power r handling of G handling of GaN, S N, Switching itching SPDT SPDT (up to 18 GHz) (up to 18 GHz) for transmitters. for transmitters. • Design sign with S with Selex lex – SI and I and Tiger G ger GaN 0.25 μm N 0.25 μm microstrip technology microstrip technology X Band SPDT GaN Switch • Small- all- and Large-signal characterization of and Large-signal characterization of HEMT HEMT devices for devices for switching applications switching applications • Device modelling vice modelling • Broadband (2-18 oadband (2-18 GHz) and N GHz) and Narr rrowband wband (X B (X Band) nd) SPDT switch design SPDT switch design 2 ‐ 18 GHz SPDT GaN Switch EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 10
EDA project KorriGAN - 2 Development of G lopment of GaN N HEMT HEMT Technology in E chnology in Europe ope (K (KorriGAN) orriGAN) , , (2005-2009). (2005-2009). • To take adv take advantage of ntage of high r high robustness and po bustness and power r handling handling of G of GaN devices N devices for Lo for Low N w Noise ise applications. applications. • Design sign with S with Selex lex – SI G I GaN 0.25 μm micr N 0.25 μm microstrip strip technology technology 2 ‐ 18 GHz GaN DLNA – V1 • Noise, ise, Small- all- and Large-signal characterization of and Large-signal characterization of HEMT devices HEMT devices for for switching switching applications applications • Device modelling vice modelling • 2 B 2 Broadband oadband (2-18 GHz) r (2-18 GHz) robust LNA bust LNA designs as designs as cascade of cascade of distributed distributed amplifier amplifier cells cells 2 ‐ 18 GHz GaN DLNA – V2 EE Dept., Università di Roma Tor Vergata, Italy, 26th September 2014 11
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