Eight-Octave Low Noise Optical Receiver Utilizing Distributed - PDF document

See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/336990635 Eight-Octave Low Noise Optical Receiver Utilizing Distributed Amplification: slides Presentation · September 1997 DOI: 10.13140/RG.2.2.22977.51049 CITATIONS READ 0 1 8 authors , including: Attila Zolomy Tibor Berceli Budapest University of Technology and Economics Budapest University of Technology and Economics 54 PUBLICATIONS 134 CITATIONS 291 PUBLICATIONS 1,280 CITATIONS SEE PROFILE SEE PROFILE Attila Hilt Gabor Jaro Nokia Mobile Networks Nokia 232 PUBLICATIONS 497 CITATIONS 59 PUBLICATIONS 208 CITATIONS SEE PROFILE SEE PROFILE Some of the authors of this publication are also working on these related projects: Microwave-optical interaction View project Microwave circuits View project All content following this page was uploaded by Attila Hilt on 02 November 2019. The user has requested enhancement of the downloaded file.

EIGHT-OCTAVE LOW NOISE OPTICAL RECEIVER UTILIZING DISTRIBUTED AMPLIFICATION A.Zólomy*, T.Berceli* § , A.Hilt* §° , G.Járó*, C.S.Aitchison # , A.Baranyi § , J.Ladvánszky § , P.Y.Liang # * BME-MHT, Technical University of Budapest, Dept. of Microwave Telecommunications H- 1111 Budapest, Goldmann György - tér 3, Hungary, tel.: (+36 1) 463 41 42, fax : (+36 1) 463 32 89, e-mail : zolomy @ nov.mht.bme.hu § TKI Rt., Innovation Company for Telecommunications H- 1142 Budapest, Ungvár u. 64 -66, Hungary # Brunel University, Uxbridge, Middlesex UB8 3PH, United Kingdom ° LEMO-ENSERG-INPG, Institut National Polytechnique de Grenoble 23 Rue des Martyrs, BP 257, F-38016 Grenoble, Cedex 1, France MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 1/11

CHARACTERIZATION OF THE PIN PHOTODIODE R [dB(A/W)] -10 - -5 -5 -15 - -10 -10 -20 - -15 -15 -25 - -20 -20 -30 - -25 -25 -35 - -30 -40 - -35 -30 -45 - -40 -35 -50 - -45 -8 -40 -5 -45 -2.5 -50 V bias [V] -1 0.15 5.1 10.08 0 1 15.04 20.00 Opto Speed pin PD94CP-S12AR1300 FREQ. [GHZ] chip with tapered coplanar line Optical response of the Opto Speed pin PD as a function of frequency and bias, measured using a coplanar probe MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 2/11

RESPONSIVITY AND ELECTRICAL REFLECTION OF THE BONDED DIODE G EL [dB] R [dB(A/W)] -5 - 0 -10 - 0 -10 - -5 0 -20 - -10 -15 - -10 -10 -20 - -15 -30 - -20 -20 -10 -40 - -30 -7 -30 -5 V bias [V] -50 - -40 0 -40 -3 -9 -7 -60 - -50 -5 -2 -5 -50 -4 -1,5 -10 -3 -60 V bias [V] -1 0.15 -2 4.12 8.09 -15 12.06 0 -0,5 16.03 20.00 -20 0 FREQ. [GHZ] 0,15 5,11 10,08 15,04 20,00 FREQ. [GHZ] Responsivity of the bonded diode Reflection of the bonded diode at different bias voltages at different bias voltages MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 3/11

PIN PHOTODIODE MODEL Ls= 77pH R s = C 1 = C 2 = 10.3 W ° 60 ° 120 144fF 305fF C j = R j = R 1 = R 2 = 30 ° ° 150 8M W 77 W 2.533k W 127fF pin diode coplanar line Equivalent circuit of ° 0 ° 180 the pin PD 800 ° ° 210 330 700 Pm=300 uW (r = 1.00) 600 Ph=150 uW ° ° 240 300 500 P0=0 uW Cj [fF] Modeled Measured 400 300 200 Measured and the modeled 100 reflection of the chip 0 -10 -8 -6 -4 -2 0 Vext [V] Variation of the PD capacitance vs. bias voltage MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 4/11

LOW NOISE DISTRIBUTED AMPLIFIER DESIGN Ld=0.33 nH Rg=0.3 Ohm Lg=0.45 nH Cgd=0.036 pF Frequency Noise Figure DRAIN GATE (GHz) (dB) Cgs=0.284 pF 2 0.17 10 ps Cds=0.16 pF 4 0.33 57 mS Rds=157 Ohm 6 0.50 Rg=2 Ohm 8 0.67 10 0.83 SOURCE Transistor small signal equivalent circuit Noise figure of the used low noise ATF35376 PHEMT from HP The bandwidth is determined by the gate source capacitance and the series parasitic inductance   1 L Ng −   ( )   b  = jN b LC m  b A ( ) e = 2 arctg V   2 C −  2  2 −  2  2 ( ) 2 1 / 1 / −     c 2 c 1 2 1 / c 1 Voltage gain of the DA with parasitic inductances phase shift 2 1  c =  c = ( ) = 2 1 N is the number of stages 2 L Z C + 0 C 4 L L CL g g Substituting C=Cgs  c1 = 7.5E+11 L=0.7 nH f c =11.95 GHz MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 5/11

DESIGN AND EXPERIMENTAL RESULTS OF THE AMPLIFIER HEMT L=1 mm L=4.6 mm L=10.45 mm W=0.653 mm W=1.83 mm W=1.63 mm 220 Ohm IN 50 Ohm 1 kOhm Duroid 5880 HEMT HEMT  r =2.2 50 Ohm HU=10 mm T=35u model model COND=4.1E7 bypass H=0.508mm ROUGH=20 um L=8.4 mm L=8.4 mm capacitor TAND=0.0009 W=0.51 mm W=0.51 mm OUT metal island 50 Ohm W=0.2 mm W=1.04 mm W=1.49 mm for grounding L=9.2 mm L=4.6 mm L=14.28 mm The second step is the design of a simplified Finally the layout is constructed by considering amplifier structure by computer optimization the parasitics and discontinuities step by step 10 15 9 8 10 7 5 6 S 21 [dB] 5 0 4 3 -5 2 -10 1 0 -15 0.5 2.5 4.5 6.5 8.5 10.5 12.5 0 2 4 6 8 10 12 freq. [GHz] freq. [GHz] Measured gain Measured noise figure MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 6/11

PHOTODIODE-AMPLIFIER CONNECTION POSSIBILITIES L B =0.667 nH V Out V Out DA DA I In 50 W 50 W I In C j =0.5pF C j =0.5pF a.) b.) L s1 =0.297 nH L s2 =0.323 nH L s1 =1.279 nH L s2 =0.63 nH V Out V Out DA DA 50 W 50 W 50 W I In I In C j =0.5 pF C p =0.5 pF c.) d.) Different matching circuits 44 40 case c.) case a.) case d.) case b.) 42 30 [dB W] pA / Hz 40 20 38 case a.) case b.) 10 case c.) 36 case d.) 34 0 0 2 4 6 8 10 0 2 4 6 8 10 frequency [GHz] frequency [GHz] Equivalent input noise current density Comparison of transfer impedance MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 7/11

DESIGN AND CONSTRUCTION OF THE PHOTORECEIVER 10 Resistor of the Second pin diode PIN bonding wires bias circuit diode Connection dB of the PIN DC diode to the Alumina Amplifier Blocking Substrate input line Capacitor Gold amplifier coated brass plate Duroid Substrate 0 Cu box 1 Freq. (GHz) 10 simulated responsivity of the photoreceiver with inductive matching (case b) . -4 dB -24 1 10 Freq. (GHz) simulated output reflection of the PR with inductive matching (case b) MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 8/11

MEASURED OPTICAL RESPONSE OF THE PHOTORECEIVER 20 20 15 10 10 5 R[dB(A/W)] [dB(A/W)] optical receiver 0 0 -5 -10 -10 photodetector -15 -20 -20 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 frequency [GHz] frequency [GHz] Measured responsivity of a photoreceiver Measured responsivity of the photoreceiver with PD matched to 50 W and the with inductive matching two-stage DA MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 9/11

NOISE MEASUREMENTS 2 V PRout P meas PR , 4 R PD+DA 0 Z tr G A (f ) @ 70 dB Spectrum Analyzer  f RBW R 0 = 50 W 2 2 P meas,50 W i R reference 50 0 noise source 4 (T 0 =290K) NOISE MEASUREMENT SETUP PD-DA NOISE PD ( ) 35 − 4 R P P W 0 meas PR , meas , 50 ( ) 30 2 2 = + 2 V f i R ( ) PRout  50 0 25 f G f RBW A 20 15 10 2 ( ) V 2 PRout 5 = i f [pA / Hz ] eqPRin 2 0 Z 3 4 5 6 7 8 9 tr FREQUENC NCY (GHZ) measured equivalent input noise calculation of the input equivalent noise current density current density MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 10/11

REFERENCES [1] Colin S.Aitchison : “The Intrinsic Noise Figure of the MESFET Distributed Amplifier”, IEEE Trans. on Microwave Theory and Techniques, vol. 33, pp. 460-466, June 1985. [2] Colin S.Aitchison : “The Predicted Signal to Noise Performance of a Photodiode Distributed Amplifier Optical Detector”, IEEE MTT -S Digest, Vol. 2, 1992. [3] Thomas T.Y.Wong : “Fundamentals of Distributed Amplification”, Artech House, Boston, London, 1993. [4] A.Zólomy, G.Járó, A.Hilt, A.Baranyi, J.Ladvánszky : “Wideband Distributed Amplifier Using Encapsulated HEMTs”, NATO Advanced Research Workshop Sozopol, Bulgaria, September, NATO ASI Series, 3-Vol.33, pp. 315-320, Kluwer Academic Publishers, Dordrecht, Boston, London. [5] A.Zólomy, A.Hilt, A.Baranyi , G.Járó: “Microwave Distributed Amplifiers in Hybrid Integrated Technology”, Proc. of the 1997 European Conference on Circuit Theory and Design, pp. 1374-1377, Budapest, Hungary, September, 1997. [6] G.Járó ,T.Berceli, A.Hilt, A.Zólomy : “Gain and Noise Optimization of an Optical Receiver Utilizing a Distributed Amplifier”, Proc. of the 1997 European Conference on Circuit Theory and Design, pp. 1356-1359, Budapest, Hungary, September, 1997. [7] A.Hilt , G.Járó, A.Zólomy, B.Cabon, T.Berceli, T.Marozsák : “Microwave Characterization of High Speed pin Photodiodes ”, Proc. of the COMITE’97 , 9 th Conference on Microwave Techniques, Pardubice, Czech Republic, October 1997. MWP'97 IEEE Topical Meeting on Microwave Photonics, Duisburg, Germany 11/11 View publication stats View publication stats