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Via Pillar-aware Detailed Placement Yong Zhong, Tao-Chun Yu, Kai-Chuan Yang, and Shao-Yun Fang The Electronic Design Automation Laboratory Department of Electrical Engineering National Taiwan University of Science and Technology 1 Outline


  1. Via Pillar-aware Detailed Placement Yong Zhong, Tao-Chun Yu, Kai-Chuan Yang, and Shao-Yun Fang The Electronic Design Automation Laboratory Department of Electrical Engineering National Taiwan University of Science and Technology 1

  2. Outline Introduction Algorithm Experiment Results Conclusion The EDA Lab, NTUSTEE 2

  3. INTRODUCTION The EDA Lab, NTUSTEE 3

  4. Detailed Placement  In the VLSI physical design flow, placement consists of 3 stages: (1) Global placement (2) Legalization (3) Detailed placement  Detailed placement focuses on improving the legalized placement solution, while keeping its legality Global Placement Legalization Detailed Placement Optimization • Wirelength • Density • Manufacturing rules • Lithography • Multi-row-height Cells • … The EDA Lab, NTUSTEE 4

  5. Via Pillar  Feature size has shrunk down to 7 nm and beyond  The impact of wire resistance is significantly growing  The circuit delay incurred by the metal wires is noticeable raising  A new technique “ Via Pillar ” (or via pillar) is proposed 50% R delay vs. Total delay 40% 30% 20% 10% 0% 40nm 28nm 16nm 7nm 5nm The EDA Lab, NTUSTEE L. -C. Lu, Physical Design Challenges and Innovations to Meet Power, Speed, and Area Scaling Trend", ISPD, 2017 5

  6. Structure of Via Pillar Structure of Via Pillar • Multiple vias • Multiple metal wires • Cross multiple layers (generally) Metal wire Pin of cell Via The EDA Lab, NTUSTEE 6

  7. Benefits of Via Pillar Benefits of Via Pillar • Reduce Wire Resistance • Reduce Circuit Latency • Enhance Reliability • Enhance EM robustness Metal wire Pin of cell via The EDA Lab, NTUSTEE 7

  8. Benefits of Via Pillar 50% R delay vs. Total delay 40% 30% 20% With Via Pillar 10% 0% 40nm 28nm 16nm 7nm 5nm L. -C. Lu, Physical Design Challenges and Innovations to Meet Power, Speed, and Area Scaling Trend", ISPD, 2017 The EDA Lab, NTUSTEE 8

  9. Problem on Via Pillar Insertion Major issues that cause poor Insertion success rate: - Track Alignment Issue - Power/Ground Stripe Overlapping - Insufficient Margin Area The EDA Lab, NTUSTEE 9

  10. Track Alignment Issue  In our experiments, we found that the via pillar insertion may fail when the access point is not at a certain position w.r.t. its adjacent tracks M4 (success) M4 (failure) The EDA Lab, NTUSTEE 10

  11. Track Alignment Issue (cont’d)  In our experiments, we found that the via pillar insertion may fail when the access point is not at a certain position w.r.t. its adjacent tracks M5 (success) M5 (failure) The EDA Lab, NTUSTEE 11

  12. Power/Ground Stripe Overlapping  If the structure overlaps with a power/ground (PG) stripe, the insertion of the via pillar will fail  Denser or wider PG strips will result in fewer eligible positions, more difficult to optimize the result VDD / VSS VDD / VSS VDD / VSS VDD / VSS VDD / VSS Via pillar-inserting cells Standard cells not concerning via-pillar The EDA Lab, NTUSTEE 12

  13. Insufficient Margin Area  If a via pillar structure overlaps with another via pillar or design boundaries, the insertion will fail Pin Via Pillar Via Pillar Design Boundary The EDA Lab, NTUSTEE 13

  14. Previous Works  The research on detailed placement have been developed in decade that address various issues  Wirelength  Density  Manufacturing rules  Lithography  Multi-row-height Cells  However, none of these works has focused on via pillar insertion in the detailed placement stage The EDA Lab, NTUSTEE 14

  15. ALGORITHM The EDA Lab, NTUSTEE 15

  16. Terminology  An N-cell is a cell that is not concerning via pillar (normal cell)  A V-cell is a cell that will be inserted a via pillar  An eligible row/site/position indicates the position with maximized insertion rate  No track alignment issue  No overlap with any PG stripe  MDC is the maximum displacement constraint that prevents from a large movement The EDA Lab, NTUSTEE 16

  17. Algorithm Flow Input Eligible Positions Determination Global Move Legalization for V-cells Legalization for N-cells Output Check Legality Yes No Global Move for Congested Row Improvement The EDA Lab, NTUSTEE 17

  18. Input • • Placement Result Configure file List of via-pillar inserting cells The EDA Lab, NTUSTEE 18

  19. Eligible Positions Determination  To enhance the via pillar insertability, we determine all the eligible positions for all V-cells 1. Filter out positions overlap with PG stripe 2. Filter out positions with track alignment issue Eligible Row Eligible Site Track 𝜀 𝜀 𝜀 Access point 𝜀 Track Track Track For each horizontal layers For each vertical layers The EDA Lab, NTUSTEE 19

  20. Global Move  The goal of this step is to move all V-cells in ineligible rows to eligible sites Find a best eligible position for a source V-cell The best eligible position is… ? An N-cell A V-cell or a white space Swap Move The EDA Lab, NTUSTEE 20

  21. Global Move (cont’d)  For each V-cell, We first find a best eligible position  We traverse all eligible sites within 𝑁𝐸𝐷 and evaluate them by the cost function 𝑑𝑝𝑡𝑢 = 𝛽 ∙ ∆𝑋 + 𝛾 ∙ 𝐸 + 𝜍𝑄 𝐷 + 𝜏(1 − 𝑄 𝑇 ) 𝐷 = 𝐵𝑠𝑓𝑏(𝑂𝑑𝑓𝑚𝑚𝑡) 𝑄 𝐵𝑠𝑓𝑏(𝑆𝑝𝑥) ∙ ∆𝐵𝑠𝑓𝑏(𝑑𝑓𝑚𝑚) #𝑓𝑚𝑗𝑕𝑗𝑐𝑚𝑓 𝑡𝑗𝑢𝑓𝑡 𝑄 𝑇 = #𝑢𝑝𝑢𝑏𝑚 𝑡𝑗𝑢𝑓𝑡 𝑗𝑜 𝑠𝑝𝑥 ∆𝑋: Wirelength improvement or degradation 𝐸: Displacement 𝑄 𝐷 : Penalty of congested situation 𝑄 𝑇 : Penalty of density of eligible sites The EDA Lab, NTUSTEE 21

  22. Global Move (cont’d)  The overlaps among cells are permitted in this step  To prevent from the sequence issue, we move a cell to a site if it is occupied by another V-cell Find a best eligible position for a source V-cell The best eligible position is… ? An N-cell A V-cell or a white space Swap Move  There should be no V-cell in an ineligible row after this step The EDA Lab, NTUSTEE 22

  23. DP-based Legalization Method (cont’d)  Our legalizer is based on dynamic programming-based detailed placement algorithm [Taghavi et al., ICCAD, 2010] 𝐷 𝑗 𝐷 𝑗+1 𝐷 𝑗+2 𝐷 𝑗+𝑜 Cell … -M -M -M -M … -M+1 -M+1 -M+1 -M+1 … S -M+2 -M+2 -M+2 -M+2 T … … … … … M M M M Movement (-M~M) The EDA Lab, NTUSTEE 23

  24. DP-based Legalization Method ( cont’d)  However, the order of cells among V-cells and N-cells may have to be changed to obtain a result in better quality if the PG stripes are dense or the row is congested VDD / VSS VDD / VSS VDD / VSS VDD / VSS VDD / VSS N-cell V-cell The EDA Lab, NTUSTEE 24

  25. DP- based Legalization Method (cont’d)  Hence, we divide legalization procedure into two-stage to achieve the effect of re-ordering Legalization for V-cells Resolve overlaps among V-cells Ignore the existence of N-cells Legalization for N-cells Regard the V-cells as obstacles Achieve the effect of re-ordering among V-cells and N-cells The EDA Lab, NTUSTEE 25

  26. Legalization for V-cell  In the legalization of V-cells, we ignore the existence of N-cells and only legalize for V-cells 𝐷 𝑗 𝐷 𝑗+1 N-cell 𝑁 V-cell 𝐷 𝑗 𝐷 𝑗+1 Candidate sites for V-cell 𝐷 𝑗 𝐷 𝑗+1 The EDA Lab, NTUSTEE 26

  27. Legalization for V- cell (cont’d) 𝑑𝑝𝑡𝑢 = 𝛽 ∙ ∆𝑋 + 𝛾 ∙ 𝐸 + 𝑄 M + 𝑄 E ∆𝑋: Wirelength improvement or degradation 𝐸: Displacement 𝑄 𝑁 : Penalty for violation of MDC 𝑄 𝐹 : Penalty of eligible site alignment 𝑄 𝑁 = ቊ 0, 𝑒𝑗𝑞𝑚𝑏𝑑𝑓𝑛𝑓𝑜𝑢 𝑥𝑗𝑢ℎ𝑗𝑜 𝑁𝐸𝐷 𝑄 𝐹 = ቊ0, 𝑗𝑔 𝑢ℎ𝑓 𝑡𝑗𝑢𝑓 𝑗𝑡 𝑓𝑚𝑗𝑕𝑗𝑐𝑚𝑓, ∞, 𝑒𝑗𝑡𝑞𝑚𝑏𝑑𝑛𝑓𝑜𝑢 𝑐𝑓𝑧𝑝𝑜𝑒 𝑁𝐸𝐷 ∞, 𝑝𝑢ℎ𝑓𝑠𝑥𝑗𝑡𝑓. The EDA Lab, NTUSTEE 27

  28. Legalization for N-cell  To achieve the effect of re-ordering among V-cells and N-cells, we regard the V-cells as obstacles without actually place it. 𝐷 𝑗 𝐷 𝑗+1 N-cell 𝑁 V-cell 𝐷 𝑗 𝐷 𝑗+1 Candidate sites for V-cell 𝑁 Obstacle 𝐷 𝑗 𝐷 𝑗+1 28 The EDA Lab, NTUSTEE

  29. Legalization for N- cell (cont’d) 𝐷 𝑗 𝐷 𝑗+1 𝐷 𝑗 𝐷 𝑗+1 𝐷 𝑗+2 𝐷 𝑗+𝑜 Cell … -M -M -M -M … -M+1 -M+1 -M+1 -M+1 … S -M+2 -M+2 -M+2 -M+2 T … … … … … M M M M Movement (-M~M) The EDA Lab, NTUSTEE 29

  30. Legalization for N- cell (cont’d) 𝐷 𝑗 𝐷 𝑗+1 𝐷 𝑗 𝐷 𝑗+1 𝐷 𝑗+2 𝐷 𝑗+𝑜 Cell … -M -M -M -M … -M+1 -M+1 … S -M+2 -M+2 -M+2 T … … … … … M M M M Movement (-M~M) The EDA Lab, NTUSTEE 30

  31. Legalization for N- cell (cont’d) 𝑑𝑝𝑡𝑢 = 𝛽 ∙ ∆𝑋 + 𝛾 ∙ 𝐸 + 𝑄 M ∆𝑋: Wirelength improvement or degradation 𝐸: Displacement 𝑄 𝑁 : Penalty of MDC 𝑄 𝑁 = ቊ 0, 𝑒𝑗𝑞𝑚𝑏𝑑𝑓𝑛𝑓𝑜𝑢 𝑥𝑗𝑢ℎ𝑗𝑜 𝑁𝐸𝐷 ∞, 𝑒𝑗𝑡𝑞𝑚𝑏𝑑𝑛𝑓𝑜𝑢 𝑐𝑓𝑧𝑝𝑜𝑒 𝑁𝐸𝐷 The EDA Lab, NTUSTEE 31

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