Ther ermal mal Simu mulation lation of IGB GBTs s Use sed d - PowerPoint PPT Presentation

Ther ermal mal Simu mulation lation of IGB GBTs s Use sed d in Hybrid rid- Ruben Bons El Elect ectric ric Veh ehicles cles Electronics Sector Manager CD-adapco ruben.bons@cd-adapco.com

Power er Del eliv iver ery y in in HEVs Batteries eries Electr El tric c Mot otor ors Power r El Electr tronic onics

IGBT Backgr ground IGBT T = Insulat sulated d gate e bipolar olar transi nsist stor or Wiki kiped pedia: a: – “…primarily used as an electronic switch…” – “…is noted for combining high efficiency and fast switching.” – “Availability of affordable, reliable IGBTs is an important enabler for electric vehicles and hybrid cars.”

Ther erma mal l Losses es in in IGBTs IGBTs s can often en show >95% 5% IGBT T packages ges typica cally lly include de efficiency iciency an integra egrated d diode ode as well ll thermal losses 𝜽 = electrical power transmitted IGBTs s can transmit nsmit 20 kW, , 50 kW, , or more re electric ctrical al power The e over erall all package ge often en has s – Thermal losses can be >1 kW! mul ultip iple le IGBT/d /diode iode set ets Types es of losses ses – Conductive – Switching

Physical sical IGBT structu ucture

Physical sical IGBT Structu ucture

Ther erma mal l Mode delin ing g App pproache aches Advant ntages ges Disadv dvant ntages ges • Longer setup time • Get full geometric temperature Det etail iled ed Higher computational cost • distribution • High geometric aspect ratio, • Identify specific hotspots assem as embly bly so not favorable for large Well-suited for transient • assemblies Not suitable for transient • • Provides geometry for visual Simpl implif ifie ied d • Limited temperature results viewing distribution details Well-suited for inclusion in a assem embly bly • • Need extra calculation to get larger assembly junction temperature • No geometric equivalence • Most computationally efficient (abstraction) Inherently suitable for • • Requires Java scripting to RC net etwor ork transient implement in STAR-CCM+ • Directly utilizes vendor data No visual temperature plot • (assumed accurate) for the IGBT

Det etail iled ed Assem embly bly (en encaps psul ulant nt hid idde den)

Simpl implif ifie ied d Assem embly bly (encaps psul ulant nt hid idde den)

Simpl implif ifie ied d Assembl embly y Mode del in in STAR-CC CCM+: +: T jun on calcula culati tion on uncti ction The e power assigne ned d to the e block ock shou ould ld be the e sum um of the e conduc nducti tion on & switchi tching ng losses ses for all the e IGBT T & diode ode pads (= P tot al ). ). otal To com ompute e the e jun unct ction ion tem emperat perature ure T j : – Measure the temperature at one or more points on the copper base plate – Calculate T j = T base + [ R th(j-c) *P total ]

RC Net etwor ork

Transie ient Consid ider eration ations Because ause IGBTs s are bui uilt t for switch ching ing applicat ations, ions, we e need eed to conside nsider if therm ermal l transients nsients are imp mpor orta tant nt Do this by com omparing ring the e electr ectrica ical l time me scale e to the e therma ermal l time me scale. e.