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Systems I The Memory Hierarchy Topics Topics Storage technologies Capacity and latency trends The hierarchy Random-Access Memory (RAM) Key features Key features RAM is packaged as a chip. Basic storage unit is a cell (one


  1. Systems I The Memory Hierarchy Topics Topics  Storage technologies  Capacity and latency trends  The hierarchy

  2. Random-Access Memory (RAM) Key features Key features  RAM is packaged as a chip.  Basic storage unit is a cell (one bit per cell).  Multiple RAM chips form a memory. Static RAM (SRAM SRAM) ) Static RAM (  Each cell stores bit with a six-transistor circuit.  Retains value indefinitely, as long as it is kept powered.  Relatively insensitive to disturbances such as electrical noise.  Faster and more expensive than DRAM. Dynamic RAM (DRAM DRAM) ) Dynamic RAM (  Each cell stores bit with a capacitor and transistor.  Value must be refreshed every 10-100 ms.  Sensitive to disturbances, slower and cheaper than SRAM. Flash RAM - it ʼ ʼ s in your s in your ipod ipod and cell phone and cell phone Flash RAM - it  Each cell stores 1 or more bits on a “floating-gate” capacitor  Keeps state even when power is off  As cheap as DRAM, but much slower 2

  3. RAM Summary Tran. Access per bit time Persist? Sensitive? Cost Applications SRAM 6 1X Yes No 100x cache memories DRAM 1 10X No Yes 1X Main memories, frame buffers Flash 1/2-1 10000X Yes No 1X Disk substitute 3

  4. Conventional DRAM Organization d x w DRAM: d x w DRAM:  dw total bits organized as d supercells of size w bits 16 x 8 DRAM chip cols 0 1 2 3 2 bits 0 / addr 1 rows memory supercell 2 controller (2,1) (to CPU) 3 8 bits / data internal row buffer 4

  5. Reading DRAM Supercell (2,1) Step 1(a): Row access strobe (RAS RAS) selects row 2. ) selects row 2. Step 1(a): Row access strobe ( Step 1(b): Row 2 copied from DRAM array to row buffer. Step 1(b): Row 2 copied from DRAM array to row buffer. 16 x 8 DRAM chip cols 0 1 2 3 RAS = 2 2 0 / addr 1 rows memory 2 controller 3 8 / data internal row buffer 5

  6. Reading DRAM Supercell (2,1) Step 2(a): Column access strobe (CAS CAS) selects column 1. ) selects column 1. Step 2(a): Column access strobe ( Step 2(b): Supercell Supercell (2,1) copied from buffer to data lines, (2,1) copied from buffer to data lines, Step 2(b): and eventually back to the CPU. and eventually back to the CPU. 16 x 8 DRAM chip cols 0 1 2 3 CAS = 1 2 0 / addr To CPU 1 rows memory 2 controller supercell 3 8 (2,1) / data supercell internal row buffer (2,1) 6

  7. Memory Modules addr (row = i, col = j) : supercell (i,j) DRAM 0 64 MB memory module consisting of DRAM 7 eight 8Mx8 DRAMs bits bits bits bits bits bits bits bits 56-63 48-55 40-47 32-39 24-31 16-23 8-15 0-7 63 63 56 56 55 55 48 48 47 47 40 40 39 39 32 32 31 31 24 24 23 23 16 16 15 15 8 8 7 7 0 0 Memory controller 64-bit doubleword at main memory address A 64-bit doubleword at main memory address A 64-bit doubleword 7

  8. Enhanced DRAMs All enhanced DRAMs DRAMs are built around the conventional are built around the conventional All enhanced DRAM core. DRAM core.  Fast page mode DRAM (FPM DRAM)  Access contents of row with [RAS, CAS, CAS, CAS, CAS] instead of [(RAS,CAS), (RAS,CAS), (RAS,CAS), (RAS,CAS)].  Extended data out DRAM (EDO DRAM)  Enhanced FPM DRAM with more closely spaced CAS signals.  Synchronous DRAM (SDRAM)  Driven with rising clock edge instead of asynchronous control signals.  Double data-rate synchronous DRAM (DDR SDRAM)  Enhancement of SDRAM that uses both clock edges as control signals.  Video RAM (VRAM)  Like FPM DRAM, but output is produced by shifting row buffer  Dual ported (allows concurrent reads and writes) 8

  9. Nonvolatile Memories DRAM and SRAM are volatile memories DRAM and SRAM are volatile memories  Lose information if powered off. Nonvolatile memories retain value even if powered off. Nonvolatile memories retain value even if powered off.  Generic name is read-only memory (ROM).  Misleading because some ROMs can be read and modified. Types of ROMs Types of ROMs  Programmable ROM (PROM)  Eraseable programmable ROM (EPROM)  Electrically eraseable PROM (EEPROM)  Flash memory Firmware Firmware  Program stored in a ROM  Boot time code, BIOS (basic input/ouput system)  graphics cards, disk controllers. 9

  10. Typical Bus Structure Connecting CPU and Memory A bus bus is a collection of parallel wires that carry is a collection of parallel wires that carry A address, data, and control signals. address, data, and control signals. Buses are typically shared by multiple devices. Buses are typically shared by multiple devices. CPU chip register file ALU system bus memory bus main I/O bus interface memory bridge 10

  11. Memory Read Transaction (1) CPU places address A on the memory bus. CPU places address A on the memory bus. register file Load operation: movl A, %eax ALU %eax main memory 0 I/O bridge A bus interface A x 11

  12. Memory Read Transaction (2) Main memory reads A from the memory bus, retreives retreives Main memory reads A from the memory bus, word x, and places it on the bus. word x, and places it on the bus. register file Load operation: movl A, %eax ALU %eax main memory 0 I/O bridge x bus interface A x 12

  13. Memory Read Transaction (3) CPU read word x from the bus and copies it into CPU read word x from the bus and copies it into register %eax eax. . register % register file Load operation: movl A, %eax ALU %eax x main memory 0 I/O bridge bus interface A x 13

  14. Memory Write Transaction (1) CPU places address A on bus. Main memory reads it CPU places address A on bus. Main memory reads it and waits for the corresponding data word to arrive. and waits for the corresponding data word to arrive. register file Store operation: movl %eax, A ALU %eax y main memory 0 I/O bridge A bus interface A 14

  15. Memory Write Transaction (2) CPU places data word y on the bus. CPU places data word y on the bus. register file Store operation: movl %eax, A ALU %eax y main memory 0 I/O bridge y bus interface A 15

  16. Memory Write Transaction (3) Main memory read data word y from the bus and stores Main memory read data word y from the bus and stores it at address A. it at address A. register file Store operation: movl %eax, A ALU %eax y main memory 0 I/O bridge bus interface A y 16

  17. Disk Geometry Disks consist of platters platters, each with two , each with two surfaces surfaces. . Disks consist of Each surface consists of concentric rings called tracks tracks. . Each surface consists of concentric rings called Each track consists of sectors sectors separated by separated by gaps gaps. . Each track consists of tracks surface track k gaps spindle sectors 17

  18. Disk Geometry (Multiple-Platter View) Aligned tracks form a cylinder. Aligned tracks form a cylinder. cylinder k surface 0 platter 0 surface 1 surface 2 platter 1 surface 3 surface 4 platter 2 surface 5 spindle 18

  19. Disk Capacity Capacity: maximum number of bits that can be stored. maximum number of bits that can be stored. Capacity:  Vendors express capacity in units of gigabytes (GB), where 1 GB = 10^9. Capacity is determined by these technology factors: Capacity is determined by these technology factors:  Recording density (bits/in): number of bits that can be squeezed into a 1 inch segment of a track.  Track density (tracks/in): number of tracks that can be squeezed into a 1 inch radial segment.  Areal density (bits/in2): product of recording and track density. Modern disks partition tracks into disjoint subsets called Modern disks partition tracks into disjoint subsets called recording recording zones zones  Each track in a zone has the same number of sectors, determined by the circumference of innermost track.  Each zone has a different number of sectors/track 19

  20. Computing Disk Capacity Capacity = (# bytes/sector) x (avg avg. # sectors/track) x . # sectors/track) x Capacity = (# bytes/sector) x ( (# tracks/surface) x (# surfaces/platter) x (# tracks/surface) x (# surfaces/platter) x (# platters/disk) (# platters/disk) Example: Example:  512 bytes/sector  300 sectors/track (on average)  20,000 tracks/surface  2 surfaces/platter  5 platters/disk Capacity = 512 x 300 x 20000 x 2 x 5 Capacity = 512 x 300 x 20000 x 2 x 5 = 30,720,000,000 = 30,720,000,000 = 30.72 GB = 30.72 GB 20

  21. Disk Operation (Single-Platter View) The disk The read/write head surface is attached to the end spins at a fixed of the arm and flies over rotational rate the disk surface on a thin cushion of air. spindle spindle spindle spindle spindle By moving radially, the arm can position the read/write head over any track. 21

  22. Disk Operation (Multi-Platter View) read/write heads move in unison from cylinder to cylinder arm spindle 22

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