Quantum Hall physics: Introduction and current affairs Ulrich - PowerPoint PPT Presentation

Quantum Hall physics: Introduction and current affairs Ulrich Zuelicke u.zuelicke@massey.ac.nz Institute of Fundamental Sciences Massey University Palmerston North, New Zealand International Summer School ”Quantum Transport in Mesoscopic Scale and Low Dimensions”, ISSP , University of Tokyo, August 13 – 21, 2003 – p.1

� Outline Introduction to basics of the quantum Hall effect sample geometry, measurement technique incompressibility quantized Hall resistance microsocpic origin of incompressibility role of disorder Overview of exotic interaction effects quasiparticles with fractional charge and statistics; composite fermions; chiral Luttinger liquids; quantum Hall ferromagnets fractional quantum Hall effect in rotating atomic gases International Summer School ”Quantum Transport in Mesoscopic Scale and Low Dimensions”, ISSP , University of Tokyo, August 13 – 21, 2003 – p.2

Introduction to the basics of the quantum Hall effect International Summer School ”Quantum Transport in Mesoscopic Scale and Low Dimensions”, ISSP , University of Tokyo, August 13 – 21, 2003 – p.3

✁ Two–dimensional electron systems Quantum Hall (QH) effect observed in 2D electron systems placed in a perpendicular magnetic field 2DES with density n important parame- B ter: filling factor ν φ filling factor = n/B 0 International Summer School ”Quantum Transport in Mesoscopic Scale and Low Dimensions”, ISSP , University of Tokyo, August 13 – 21, 2003 – p.4

✂ ✂ ✂ Two–dimensional electron systems Quantum Hall (QH) effect observed in 2D electron systems placed in a perpendicular magnetic field illustration taken from: Jeckelmann and Jeanneret ’01 typically realized in semiconductor heterostructures using band–gap engineering: (Ga,Al)As, (In,Al)As, International Summer School ”Quantum Transport in Mesoscopic Scale and Low Dimensions”, ISSP , University of Tokyo, August 13 – 21, 2003 – p.4

✂ ✂ ✂ Two–dimensional electron systems Quantum Hall (QH) effect observed in 2D electron systems placed in a perpendicular magnetic field illustration taken from: Jeckelmann and Jeanneret ’01 typically realized in semiconductor heterostructures using band–gap engineering: (Ga,Al)As, (In,Al)As, original discovery of QH effect in silicon MOSFETs Klitzing, Dorda, Pepper ’80 International Summer School ”Quantum Transport in Mesoscopic Scale and Low Dimensions”, ISSP , University of Tokyo, August 13 – 21, 2003 – p.4

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