New power electronics enable compact, cool and efficient xEV power - PowerPoint PPT Presentation

New power electronics enable compact, cool and efficient xEV power train inverters

FOR THE FIRST TIME IN TRANSPORTATION SEMICONDUCTORS ARE RESPONSIBLE FOR THE KEY VALUES OF VEHICLE Driving Refuel Driving 0 to 60 Cost Distance time satisfaction mph $ >500km Confidential information

POWER ELECTRONICS Power density/ Efficiency GaN It is a right time to seriously HEMT consider GaN electronics SiC MOSFET Maturity period IGBT SILICON MOSFET JFET Years 70-s 80-s 90-s 00-s 10-s 20-s Confidential information

OUTLINE ▪ GaN performance vs SiC MOSFET and Si IGBT ▪ GaN reliability ▪ GaN manufacturing cost vs SiC MOSFET ▪ VisIC product value Confidential information

ABOUT US We are experts in semiconductor design, power electronics and microelectronics packaging Core team with more than 120 years of relevant experience Track record of few GaN technologies developed from scratch to qualification VisIC Technologies has the highest performing product on market Confidential information

GaN TO FIT TO POWER TRAIN ▪ Easy to use → standard 0V to +15V driver ▪ High current capability → 1.7 kA to mOm ▪ High noise immunity → +5.5V threshold voltage ▪ Easy paralleling → 600A HB one driver demonstrated ▪ Reverse conductivity → no SiC diode ( flywheel) required ▪ Single device per leg HB DC/DC CCM hard switching up to 9kW or 1 MHz [100 A @ 650V] Confidential information

EFFICIENT GaN vs IGBT Improve 160kW Inverter efficiency by > 4% 20 times 30KHz less Inverter Target cost ~$100/kW Battery cost saving: 2024: > $1280, 2030 >$600 Confidential information

8 EFFICIENT GAN VS OTHER WIDE BAND GAP DEVICES Comparison with: 24 • Similar Rdson mOhm 4.5 times • Similar current less 450% 25 • Similar voltage rating mOhm 22 75% mOhm VisIC GaN is superior over other GaN & SiC solutions Confidential information

1kW to 9kW with Liquid Cooling ▪ Tested in a Buck converter, 400V to 200V; CCM; hard switching • Dead time - 75nS • Liquid Cooling • Inductor 340uH • 28 ° C ambient temperature 22 mOhm 80 A 650V Efficiency vs load 100 99 98 Efficiency [%] 97 98.9% @ 100kHz 96 100kHz 200kHz 95 98.4% @ 200kHz 94 300kHz 93 92 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 Power [W] Confidential information

HIGH POWER CAPABILITY 600A t rise 4.25ns t fall 13ns Inductor 200A/div Mid point 200V/div 6xHB parallel 6xHB parallel 1 driver, no flywheel diodes 1 driver, no flywheel diodes test board available test board available Confidential information

CURRENT DISTRIBUTION 100A 20 kW HB CCM hard switch Inductor 20A/div 41°C 40°C 38°C40°C44°C Mid point 100V/div t rise 5.6 ns Thermal read out shows uniform current t fall 12 ns distribution Confidential information

MODULE ▪ 600A rms current ▪ 650V blocking voltage ▪ Footprint 45mm x 80 mm Confidential information

GaN TRANSISTOR Two main failure mechanisms ( FM): lateral or vertical breakdown: GATE 0.02 to 0.024 microns DRAIN SOURCE GaN cap AlGaN AlN Spacer GaN GaN BUFFER WITH COMPLEX SUPERLATTICE OF 5 to 6 microns GaN/AlGaN and LT/HT AlGaN NUCLEATION LAYER Substrate Confidential information

FAILURE MECHANISMS ARE IDENTIFIED Two main failure mechanisms ( FM): 1. Lateral time dependent dielectric breakdown [LTDDB] 2. Vertical time dependent dielectric breakdown [VTDDB] VERTICAL: LATERAL: Leakage current is possible due to conductive Defects build up in drain-gate access region. Silicon substrate Drain-Gate voltage /E-field is an acceleration factor Drain-Substrate voltage/E-field is an acceleration Drain Fiedl plate Source Drain Gate GaN cap AlGaN AlN Spacer GaN Defects Buildup Gate Defects build up Substrate BUFFER WITH COMPLEX NUCLEATION LAYER Substrate SUPERLATTICE OF Fig2. Typical vertical TDDB failure formation Fig.1 Typical lateral TDDB failure formation GaN/AlGaN and Confidential information LT/HT AlGaN

LIFETIME PREDICTION Predicting operation lifetime requires extrapolating Lifetime projects @ Use Conditions accelerated testing results back to nominal operating 20 years conditions 90 Nominal use conditions are conditions that the 50 Percent Fail device will be used during operations 10 Analysis extrapolates to use conditions through Nominal use conditions 520V @ 90 ° C acceleration factors (AF) 1 Field AF: γ = 0.35V -1 1.E+01 1.E+03 1.E+05 1.E+07 1.E+09 1.E+11 Temperature AF: Ea =0.54ev (preliminary) Lifetime (hrs) Conservative while testing in progress Confidential information

FORWARD BIAS LIFETIME PREDICTION VisIC ’ s GaN HEMT is extremely reliable under forward bias condition 10,000 years Tested HEMT only devices at accelerated conditions Increased leakage regime consistent with TDDB failure mechanism 6 Volts 150 ° C 𝑁𝑝𝑒𝑓𝑚 ∶ 𝑢𝑢𝑔 ∝ 𝑓 −𝛿𝑊 Confidential information

COST Normalized to 6 ” wafer Similar volume SEMICONDUCTOR Available 4 ” COMPONENT COST Same and 6 ” current YIELD die size IGBT =100% EPITAXY BACK SIDE RAW WAFER GaN ~50% Grown by Hot Available 6 ” , FRONT SIDE Wall Chemical Available 6 ” 8 ” Vapor SiC ~ 20% Deposition 8 ” , 12 ” EPITAXY (HTCVD) EPITAXY RAW WAFER ~1350-1500 ° C RAW WAFER: Si RAW WAFER: Si Si GaN SiC IGBT HEMT MOSFET Confidential information

COST SEMICONDUCTOR IGBT SIC GaN COMPONENT COST 4.5 Normalized manufacturing cost per 4 YIELD 3.5 same current die BACK SIDE 3 2.5 FRONT SIDE 2 1.5 EPITAXY 1 0.5 RAW WAFER 0 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 Years Confidential information

GaN SOLUTION HIGH CURRENT, HIGH EFFICIENCY: RIGHT PERFORMANCE RIGHT RELIABILITY RIGHT COST STRUCTURE Confidential information

GaN SOLUTION Low System ▪ cost GaN is the new generation semiconductor High Cool $ Efficiency operation ▪ GaN is 500 times more suitable for power than Silicon Vi VisIC 3D D GaN The proprietary and exclusive VisIc power switch development allows a disruptive power switch with proprietary 3D technology to >500km enable efficient, low cost and small size Fast Long drive Charging system for EV ’ s efficient power train and distance fast charging system Small Size Confidential information

D-mode vs E-mode E-mode D-mode VisIC ’ s benefits ( GaN System design ) ( VisIC design ) 840 652 Die area [mm.sq]: for mOhm Lower cost in volume 16 14 # of Masks 1450 1760 Current capacity: Amp per mOhm More power density ~350 ~200 Total Switching Energy, µJ @ 50A More system robustness 1.5V 5.5V V TH Noise immunity (Miller Spike) VisIC design for automotive qualification AEC-Q101 @ 650V (100%) Confidential information