Manufacturer of High Speed, Precision Electrolytic Plating Equipment & Technology Development Leslie Derrig, Vice President of Sales & Marketing
Manufacturer of High Speed, Precision Electrolytic Plating Equipment & Technology Development • Located in New York, 10 mins. from JFK • Installations in over 28 Countries • 13 Offices & Agents World-Wide • Over 178 Customers • 28 employees (12 Engineers) • Design & Integrator of Plating Components t n e m s p 1997 Renamed Digital Matrix Corp k i n u 1960 Audio Matrix Optical Disc a 2002 Introduced MEMS Plating q 1995 Renamed to Digital Matrix y T E t 1995 Audio Matrix Purchased i m l l e i c a 2004 Semiconductor Eqpt. n a r a F g P o r e t t l n a g o l e F r H m a d 2005 Drum Plating L d e e e c o c c t n u u a d d d e v o d v o r A t o r n t M n I g 2 I 2 n 0 7 0 i t 0 0 9 a 2 9 2 l P 1 Now!
More about us… ….. .. More about us � Industries we service: Industries we service: � � Diffusers Diffusers � � Sensors Sensors � � Bio Bio- -Tech Tech � � Holography Holography � � Optical Disc Optical Disc � � Photo Voltaics Photo Voltaics � � Circuit Boards Circuit Boards � � Semiconductors Semiconductors � � Back Light Panels Back Light Panels � � Flat Panel Displays Flat Panel Displays � � Refractive Reflectors (LED) Refractive Reflectors (LED) � � MEMS & Nano (LIGA) MEMS & Nano (LIGA) � � Organic Light Emitting Diodes (OLED) Organic Light Emitting Diodes (OLED) �
Focus on the Environment Focus on the Environment � Everything we build and design, we focus Everything we build and design, we focus � on the effects of the environment on the effects of the environment � We never want to create a chemical We never want to create a chemical � process that is hazardous to the process that is hazardous to the environment or the people who use it. environment or the people who use it.
Electroless Plating Electroless Plating • Much longer to plate (approximately 10x’s longer) Low Speed • Limitation of thickness applications: no more than approx. 100 ums. • Chemicals need to be replenished after each plating and short lifetime of bath solution (thrown away) • No control of TTV (thickness variation) • Bath chemistry weakens during plating process • Plated area has limited consistency of properties • Metal deposits on hard on the substrate and softer on top Inconsistent Metal Deposition Plating over structure Structure Substrate
Electrolytic Plating Electrolytic Plating • Fast plating time -10 X’s faster than Electroless • No limited thickness for metal applications: TTV can range from < 0.1 μ m to 1000 μ ms • Controlled thickness variation (TTV) within a 1% of requirement • Bath Chemicals are easily balanced & maintained and will last for years • Harder plated area and consistent from top to bottom • No over plating to achieve height of plating • No need to slurry over-plating –saves on Au and other precious metals Consistent Metal Deposition Structure (metal, photo resist, etc) Conductive Layer-Cu or Au Ti or Cr Layer Substrate
Various Combinations of Plating Systems Various Combinations of Plating Systems Electroplating Features Pumps: ¾ hp per cell Rectifiers: 100A standard (process dependant) Filtration: 2-Stage Pre & Final Flow Rate: Up to 50lp/min per cell Heaters: 6 kW Fabrication: Polypropylene Sump: One sump (unless individual sumps requested) Workholders: Various Applications and holders available + Features: Electrocleaning Electrocleaning: Anodic/Cathodic Passivation: Cathodic/Anodic Spin Dry: 2 Sided spin dry
DIGITAL MATRIX DIGITAL MATRIX DIGITAL MATRIX Workholders Workholders Workholders
Obtain precise results in record time Our workholders are designed to remain on the shafts. Parts are removed and quickly reloaded over the plating solution, eliminating chemical drag-out. Plating repeatability is simple and more accurate when plating heads are not constantly removed
Wafer Inserts The Universal Workholder allows for various size wafers to be plated from one workholder • Sizes of inserts can vary from 2” to 12” wafers. • Precise thickness can be within +/- 1µm or less depending on Parts are easily thickness. loaded, locked into • High-Speed plating 4 to 5 x’s faster the workholder and than conventional plating ready to plate in seconds ! • No stress and No use of organics • Back-side mirror or rough finish • Total Thickness Variation within 1% & 5% on thicknesses under 10 μ ms
Vacuum Seal Workholder Vacuum Seal Workholder - Rotating 45 º Cathode Head - Yields Uniform Deposition - Eliminates Voids - Easy Load and Unload Wafer and ring are vacuum sealed; preventing plating solution to reach the back Ring size changes to of the wafer and creating accommodate various Holds various size contact around the edge size wafers on same wafers (this one is for of the wafer workholder 300 mm Si Wafer)
DM is capable of plating structures: DM is capable of plating structures: Precise Uniformity Means: • Grow to accurate and repeatable 50um 20um Cu height above PR or mask Au Pr Au • High Aspect Ratio and Non- Si0 2 Si Uniform Structures 1.5mm • Deposition Can Grow Straight (minimal mushrooming effect) Can plate angles, deep side walls, TSV’s and vias After plating 2 3 with 1 4 5 6 Digital Matrix PR Conductive seed layer Conductive seed layer Substrate Substrate
Bump & 3- -D Plating D Plating Bump & 3 An even more unique Digital Matrix proprietary process An even more unique Digital Matrix proprietary process that offers multiple opportunities when using an that offers multiple opportunities when using an electroforming process that most would not have electroforming process that most would not have considered in the past. The resulting structure can be a considered in the past. The resulting structure can be a 3- -D part that can be removed from the wafer. The D part that can be removed from the wafer. The 3 structure etched into the photoresist can be prismatic or structure etched into the photoresist can be prismatic or octagonal in shape and carry the shape up 20 microns octagonal in shape and carry the shape up 20 microns above the photoresist, or it can create a bump over the above the photoresist, or it can create a bump over the PR without a mushroom affect. PR without a mushroom affect.
Sidewall Deposition is Made Stronger Sidewall Deposition is Made Stronger � In the past, it was nearly impossible to plate In the past, it was nearly impossible to plate � parallel posts (rods). DM’ ’s technology and s technology and parallel posts (rods). DM equipment forces the metal ions into the equipment forces the metal ions into the sidewalls giving strength to the structures for sidewalls giving strength to the structures for mass production. mass production. Now Then
Plate up and fill the structures at Plate up and fill the structures at the same rate. the same rate. Example: a structure 100 microns wide will fill equal to the same height as another structure on the same wafer that is 10 microns wide. There is no over plating on the 10 micron wide structure and no dip on the 100 micron structure Photo Resist Metal Plating Wafer
Achieve Exact Thickness Achieve Exact Thickness If a wafer to be plated has structures that are 290 If a wafer to be plated has structures that are 290 microns tall, the plating needs to be exactly 290 microns microns tall, the plating needs to be exactly 290 microns thick. This can now be done through our advanced thick. This can now be done through our advanced process on our equipment. There is no need for process on our equipment. There is no need for backsanding or slurrying the excess to achieve the backsanding or slurrying the excess to achieve the desired thickness. This alleviates the risk of damaging desired thickness. This alleviates the risk of damaging the delicate structures and brings down the cost of time the delicate structures and brings down the cost of time & production. & production. Photo Resist Metal Plating Wafer
TSE So. Korea
TSE So. Korea
TSE So. Korea
KITECH So. Korea
Resister Applications KAIST So. Korea
SEM micrographs SEM micrographs from the GC Wafer from the GC Wafer Electroformed Ni structures. Electroformed Ni structures. PMMA & SU- -8 Removed 8 Removed PMMA & SU In co- -operation with LSU operation with LSU- -CAMD & CAMD & In co Digital Matrix Corp Digital Matrix Corp
G C Channels
BP010808- -3 Wafer QC 3 Wafer QC – – Post Au Etch Post Au Etch BP010808 1
BP010808- -3 Wafer QC 3 Wafer QC – – Post Au Etch Post Au Etch BP010808 3
Achieving Micro Holes (clear thru) Achieving Micro Holes (clear thru) Diffuser Diffuser These holes range from 1µ µm to 100 m to 100µ µm m These holes range from 1
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