NIKON PRECISION INC. Extension of 193 Immersion Lithography Steve Renwick Senior Principal Engineer, NPI
Overview � EUV Status � Bridging to EUV � Scanner Requirements for DP � NSR-S620D Performance 2 SOKUDO Breakfast Forum July 14, 2010
Lithography Technology Roadmap 65 45 nm HP Water Immersion Water Immersion 45 ITRS DRAM ½ Pitch (nm) 32 nm HP S609B NA 1.07 32 22 nm HP D S610C D o o u u NA 1.30 b b l e l e P P a 22 a t t t t e e r 16 nm HP r n n i i n S620D n g g NA 1.35 16 EUVL EUVL 11 2007 2010 2013 2016 2019 2022 3 SOKUDO Breakfast Forum July 14, 2010
EUV Infrastructure Schedule Mask infrastructure Mask tool availability: Chan, et al., SPIE 2010, February, 2010 development begins 65 1-2 years required for defect learning (immersion experience) ITRS 45 DRAM HVM Process Development can Aggressive begin here. ½ Pitch (nm) DRAM 32 Aggressive Logic Aggressive 22 NAND 16 Mask tools available, defect learning begins 11 2007 2010 2013 2016 2019 2022 Delays in infrastructure continue to push out adoption of EUV � increased cost and longer ROI for equipment makers 4 SOKUDO Breakfast Forum July 14, 2010
Extension of 193i Before EUV Arrives � Extend single patterning: – Source mask optimization and custom illumination � Enable 32 nm half pitch and beyond – Spacer double patterning – Pitch splitting double patterning (LELE, LFLE, etc.) – Line cutting lithography Tool makers need to support these schemes 5 SOKUDO Breakfast Forum July 14, 2010
Line Cutting Litho Concept 44 nm HP 44 nm HP Spacer Spacer Patterning Patterning Pitch Doubling Pitch Doubling � � Target 22 nm SRAM Gate Cell Cut Hole Cut Hole Hole Chemical Hole Chemical After Etch After Etch Patterning Patterning Shrink Shrink � � � � 6 SOKUDO Breakfast Forum July 14, 2010
Line Cutting Lithography Concept � + 1 st patterning 2 nd patterning Result (LS formation) (Cut) C. Bencher, et al., SPIE 72740G (2009) Down to 19 nm half pitch can be achieved 7 SOKUDO Breakfast Forum July 14, 2010
S620D – Enabling the Next Generation � Enabling Superior Yield: – Overlay accuracy to enable DP – CD uniformity � Enabling Affordable Lithography: – Reduced wafer overhead time – Maximum throughput – Low CoO via multi-generational use of the tool � Enabling Rapid Production Ramps: – Faster installation – Optimal uptime – Platform to enable reuse 8 SOKUDO Breakfast Forum July 14, 2010
The NSR-S620D Challenge for 2 nm Streamlign Platform Platform Streamlign self overlay NA 1.35 Bird's Eye Projection Control Lens for 2 00 wph throughput Stream Alignment for 2 0 day installation Modular 2 Structure 9 SOKUDO Breakfast Forum July 14, 2010
Bird’s Eye Control Enabling Superior Yield • Hybrid system uses laser encoders w/interferometers • Dramatically improves accuracy and stability • Targeting 2 nm overlay capabilities • Superior focus control Bird’s Eye Control Enabling Affordable Lithography Enabling Rapid Production Ramps Stream Alignment Modular 2 Structure 10 SOKUDO Breakfast Forum July 14, 2010
Stream Alignment Enabling Affordable Lithography • Five-Eye FIA • Straight Line Autofocus • Greatly reduced wafer overhead time • Targeting throughput up to 200 wph Stream Alignment Enabling Superior Yield Enabling Rapid Production Ramps Bird’s Eye Control Modular 2 Structure 11 SOKUDO Breakfast Forum July 14, 2010
Modular 2 Structure Enabling Rapid Production Ramps • Faster installation - 20 day target • Simplified maintenance • Optimal uptime • Extendible platform to enable reuse Modular 2 Structure Enabling Superior Yield Enabling Affordable Lithography Stream Alignment Bird’s Eye Control 12 SOKUDO Breakfast Forum July 14, 2010
Scanner Requirements for DP 32 nm hp DP Budget Budget Line Space CDU Spec CDU L − 1.0 nm L 1 2 2.9 nm σ CDU ( 3 ) 2.4 m − 0.5 3.3 nm OL m 1 2 σ 2.4 OL ( 3 ) CD control and overlay are critical for DP 13 SOKUDO Breakfast Forum July 14, 2010
S620D Overlay Stability Overlay average within lot 5 4 3 3 σ X 3 σ Y 2 ave.[nm] 1 Ave.X 0 Ave.Y Total 3 σ -1 1.94 1.80 -2 -3 -4 [nm] -5 1 3 5 7 9 11 13 15 17 19 wafer count Overlay 3sigma within lot � 20 wafers continuous exp. 5 � Common linear terms 4 3sigma[nm] removed 3 3sigma.X 3sigma.Y 2 1 0 1 3 5 7 9 11 13 15 17 19 wafer count S620D meets overlay requirements for 32 nm hp DP 14 SOKUDO Breakfast Forum July 14, 2010
Focus Uniformity 14.3 nm, including edge die 20 14.8 15.0 14.9 3 σ [nm] 10 0 1 2 3 -50 nm 50 nm wafer # 15 SOKUDO Breakfast Forum July 14, 2010
Budget vs. S620D Data 32 nm hp DP Budget and Actual Data Line Budget Spec Space CDU CDU L − L 1.0 nm 1.1 2.9 nm 1 2 ∆ 2.5 CD 2.4 2.1 3.3 nm m − m 0.5 0.7 1 2 3.3 ∆ 2.4 1.9 OL S620D data meet the budget requirement 16 SOKUDO Breakfast Forum July 14, 2010
S620D Overall Performance Line CDU (3 σ ) 2.5 nm Space CDU (3 σ ) 3.3 nm 22 nm L/S Line 1 Line 2 Space 1 Space 2 S620D enables pitch splitting DP 17 SOKUDO Breakfast Forum July 14, 2010
Extendible Platform for ArF Immersion Modular 2 Structure allows multigenerational use 18 SOKUDO Breakfast Forum July 14, 2010
Summary � The industry needs an interim solution for the 32 nm and 22 nm nodes, prior to the HVM development of EUV � 193 immersion lithography will be extended by: – Source optimization and computational lithography – Double patterning – Multiple patterning and cutting lithography � This places severe new requirements on a scanner for overlay and CD uniformity � The Nikon S620D enables superior yield, affordable lithography, and rapid production ramps for 32 nm - with extendibility to 22 nm 19 SOKUDO Breakfast Forum July 14, 2010
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