Business profile NTLab is a vertically integrated center for electronics: from ICs to devices. Design and production Devices Integrated modules Semiconductor IP & chips
NTLab services ASIC & IP design Off-the-shelf IPs IP porting & modification
Engineering personnel 12 Digital IC 35 (VHDL) Other (PCB, software, 33 testing...) Analog/RF IC (schematics) 12 IC layout Company staff: 146 employees
Company locations Main design office: BY BY Minsk (High-Tech Park) Branch offices: RU RU LT LT Nemenčinė Zelenograd
Office and equipment Fully equipped lab for testing of samples and engineering lots of analog and RF ASICs. Design office in Minsk: 1600 m 2
Company milestones 1989 1994 1998 2000 2006 2015 2016 2018 1989: Company started in the field of RISC architecture 1994: Project with EU Space Agency (satellite angle measurement) 1998: RF development started: automotive ASICs for Melexis (Belgium) 2000: GNSS development started with Russian Federal Navigation program 2006: NFC and RFID development started: Biometric Russian Passport and MIR Universal ID/Payment card 2015: Medical development started: ‘Narcine’– neurostimulation implant 2016: First commercial ASIC product: NT1065 ‘Nomada’ 2018: Professional audio: front-end processor development And in 2019 we have….
Company achievements 24 ASI Cs For communication systems 19 ASI Cs In satellite GNSS navigation 9 ASI Cs, 3 I Ps In UHF RFID and NFC area 2 ASI Cs For medical applications > 400 I Ps For different purposes: ADC, DAC, PLL, PMU, RF , Interfaces 11 NTLab’s own products ASICs
Semiconductor technologies 40nm RF 150nm GaAs pHEMT 28nm FD-SOI 55nm RF 55nm RF 28nm MS 500nm GaAs 180nm SiGe 65nm RF 40nm 500nm GaAs pHEMT 180nm BCD 180nm PM SOI 55/65nm RF 130nm SiGe 90nm RF 350nm SiGe 250nm SiGe 130nm MS 90nm 180nm SiGe RF 180nm RF 250nm MS/RF 180nm XH 55nm RF 350nm MS/RF 350nm RF 180nm MS 180nm MS/RF 600nm SiGe 500nm MS/RF 65nm CMOS
Spheres of design GNSS navigation RFI D/ NFC I nternet of Things Narrow & Wideband communication systems Medical implantable applications Automotive applications Professional audio
I P range Microcontrollers Processors DSP Digital solutions RF Front Ends SAR ADCs and DACs LC-based PLLs and IQ-formers Data conversion ΔΣ ADCs and DACs RF components PGA series Pipeline ADCs Self adjusting active filters IPs Complete PMU systems LVDS IP library Low power bandgap series Power RF interface: RFID and NFC Low power DC-DC converters Interfacing management and Sensing SPI, I2C, UART Low power LDO series Process, voltage, temperature sensors Low jitter PLL series Clock and Timing Low power RC oscillator series Low power XTAL oscillator series
Digital solutions Beamforming processor Dual-core microcontroller • • Four 7-channel complex auto compensation Two 32-bit CPU with FP and caches • units Operating frequency: 450 MHz • • Two 8-channel high speed ADC interfaces Video controller • • 32-bit CPU DDRAM controller • • Operating frequency: 100 MHz USB 2.0 interface • • Number of gates: 4582K Number of gates: 970K • • TSMC LP 65nm TSMC CMOS 90nm FSK demodulator GNSS processor Compatible with 12-bit ΔΣ ADC • • 64-channel complex correlator • • Pre-filtering on CIC decimator and FIR Operating frequency: 200 MHz • • CORDIC-based demodulation 32 bit CPU with FP • • Received data bitrate: 0.1 … 200Kbps 1 MByte SRAM • • Number of gates: 65K Number of gates: 2983K • • UMC eFlash CMOS 55nm TSMC LP 65nm
Data conversion I Ps: ΔΣ ADCs 12-bit switched capacitor cascade 2-2 24-bit switched capacitor cascade 2-2 low power ΔΣ ADC high performance ΔΣ ADC • • Bandwidth: 150kHz Bandwidth: 20kHz • • SINAD: 70dB SINAD: 114dB • • SFDR: 78dB SFDR: 118dB • • ENOB: 11.3bit ENOB: 19bit • • OSR: 16 OSR: 256 • • Supply voltage: 1.2V , Icc: 0.3mA Supply voltage: 5V , Icc: 30mA • • TSMC CMOS 65nm Tower Jazz 180nm PM SOI
Data conversion I Ps: SAR ADCs 12-bit low power SAR ADC 12-bit single-ended SAR ADC • • Sample rate: 2k … 1MSPS Sample rate: 20 … 200 kSPS • • DNL: ± 1.1LSB, INL: ± 3.3LSB DNL: ± 0.16LSB, INL: ± 0.45LSB • • SINAD: 63dB @ 1MSPS SINAD: 70.9dB @ 200kSPS • • ENOB: 10.2bit @ 1MSPS ENOB: 11.5bits @ 200kSPS • • Supply voltage: 1.8V/3.3V Supply voltage: 1.2V + 3.0V • • Power consumption: 148uW @ 1MSPS, 1.8V Power consumption: 133uW @ 200kSPS • • TSMC Flash ULP 40nm UMC eFlash CMOS 55nm 14-bit SAR ADC • Sample rate: 0.2 … 1MSPS • DNL: ± 0.1LSB, INL: ± 0.4LSB • SFDR: 80dB • ENOB: 12 bit • Supply voltage: 1.2V + 2.5V • Power consumption: 11mW @ 1MSPS • STM CMOS 65nm
Data conversion I Ps: pipeline ADCs 12-bit pipeline ADC 14-bit pipeline ADC • • Sample rate: 50/100/125MSPS Sample rate: 50MSPS • • Bandwidth: 510MHz Bandwidth: 300MHz • • SINAD: 59.5/59/58dB @ 50/100/125MSPS SINAD: 63.8dB • • SFDR: 73.7/73.4/70.8dB @ 50/100/125MSPS SFDR: 77dB • • ENOB: 9.6/9.5/9.4bit @ 50/100/125MSPS ENOB: 10.3bit • • Supply voltage: 1.2V Supply voltage: 1V + 1.8V • • Power consumption: 41/61/71mW @ Power consumption: 50/100/125MSPS 170mW • • TSMC CMOS 65nm TSMC MS CMOS 90nm
Data conversion I Ps: DACs 16-bit ΔΣ DAC 12-bit current-steering DAC • • Sample rate: 10 … 150MSPS Sample rate: 50kSPS • • SFDR: 77.1/75.7/74.0dB @ 50/100/150MSPS SNR: 69dB • • DNL: ± 1.27LSB SFDR: 83dB • • INL: ± 2.0LSB OSR: 512 • • Supply voltage: 2.0 … 2.5V Supply voltage: 1.8V + 3.0V • • Power consumption: 42/47/51mW @ 50/100/150MSPS Power consumption: 30mW • • TSMC CMOS 55nm TSMC SiGe BiCMOS 180nm 14-bit high-performance current-steering DAC 14-bit R-2R DAC • • Sample rate: 40 … 500MSPS Sample rate: 1MSPS • • SFDR: 83.8dB @ 500MSPS SFDR: 95dB • • DNL: ± 0.5LSB DNL: ± 1LSB • • INL: ± 1LSB INL: ± 2LSB • • Supply voltage: 1.2V + 2.5V Supply voltage: 1.2V + 2.5V • • Power consumption: 60mW @ 500MSPS Power consumption: 8mW • • STM CMOS 65nm STM CMOS 65nm
Power management I Ps Complete PMU system Ultra low power LDO voltage regulator • Input voltage: 2.0 … 3.6V • Input voltage: 1.6V … 3.6V • Four LDOs: 2x1.2V , 1.6V , 2V • Output voltage: 0.4V … 0.9V • Output voltage trimming • Voltage step: 7.9mV • Output reference voltage : 650mV • Maximum load: 0.01 …. 1mA • Output reference currents: 1µA, 40nA • Quiescent current: 17.5nA • Quiescent current: 75µA • TSMC Flash ULP 40nm • UMC eFlash CMOS 55nm Low power bandgap voltage reference Low power bandgap voltage reference • Input voltage: 2.0 … 3.6V • Input voltage: 0.8V … 1.8V • Output voltage: 0.65V • Output voltage: 0.4V • Output voltage variation: 3% • Output voltage accuracy: 1% • Quiescent current: 0.23µA • Quiescent current: 0.5µA • UMC eFlash CMOS 55nm • Samsung FD-SOI 28nm
Power management I Ps DC-DC step-down converter DC-DC step-up converter • Input voltage: 2.0 … 3.6V • Input voltage: 2.7V • Output voltage: 1.2V • Output voltage: 2.7/2.8/2.9/3.0V • Power conversion efficiency: 89% • Power conversion efficiency: 90% @ 3.0V • Quiescent current: 0.3mA @ Iout= 50mA output • UMC eFlash CMOS 55nm • Quiescent current: 10mA @ Iout= 250mA • iHP SiGe BiCMOS 130nm Process/voltage/temperature sensor • Voltage measurement range: 0.8V … 1.35V , 2.4V … 3.7V • Voltage measurement accuracy: ± 2% with trimming Temperature measurement range: -40 ° C … +125˚V • • Temperature measurement accuracy: ± 2 °C with trimming • NMOS and PMOS transistors set and metal stack for process monitoring • Output data resolution: 10bit • TSMC CMOS 28nm
Clock and timing I Ps Ultra low power crystal oscillator XTAL oscillator • • Output frequency: 32.768kHz Frequency range: 10 … 50 MHz • • Accuracy: 0.1% Phase noise @50MHz: • Icc: 0.25uA -108dBc/Hz @ 10Hz offset • UMC eFlash CMOS 55nm -140dBc/Hz @ 10kHz offset • Tower Jazz 180nm PM SOI Ultra low power RC oscillator • Output frequency: 3.2MHz • Output frequency calibration • Accuracy: 4.3% • Icc: 0.3uA • TSMC Flash ULP 40nm
Clock and timing I Ps LC-based PLL frequency synthesizer DLL-based frequency multiplier • • Frequency range: 50 … 7000 MHz Input frequency range: 0.01 … 100 MHz • • RMS jitter: down to 0.3ps Output frequency range: 2.5 … 200 MHz • • Built-in GFSK modulator Output frequency jitter: 0.3ns @ 200MHz • • TSMC CMOS 55nm GF CMOS 55nm Ring PLL for digital circuit clocking • Frequency range: 50 … 800 MHz • Phase noise: -97dBc/Hz @1MHz • TSMC CMOS 65nm 24
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