Super-Efficient Power Semiconductors Jason Hsu 許元豪 , Sr. Application Engineer
Content � Qspeed Semiconductor Introduction � The Advantage of Qspeed Diode in CCM PFC - Q Series Diode - X Series Diode � Why Can Qspeed Diode Compete Against SiC Diode - Qspeed Unique High Technology in Silicon Process - Fatal Defect in SiC Wafer � Future Product Roadmap 2007/11/19 2 Qspeed Semiconductor Confidential
3 1. Qspeed Semiconductor Introduction Qspeed Semiconductor Confidential 2007/11/19
4 Qspeed Semiconductor Confidential 2007/11/19
The Power Density Race Is Accelerating � Power Density = Output Power ÷ Size Example: 550 Watts ÷ 52 cubic inches = 11 Watts per Cubic Inch – � In 2003 the blade server power supply shown below offered 550 Watts of energy in 52 cubic inches for PD = 11 W/in 3 � In 2005 the same space was used to deliver 700 W for 13 W/in 3 � This year 2007 power supply companies must deliver 1000 W in same space -24 W/in 3 � R&D groups around the world now working to achieve 40 W/in 3 Power Density (W/cu in) 40 35 35 atts per Cubic Inch 30 29 25 24 20 19 15 13 12 11 10 W 5 0 2002 2004 2006 2008 2010 2007/11/19 5 Qspeed Semiconductor Confidential
2. The Advantage of Qspeed Diode in CCM PFC - Q Series Diode - X Series Diode 2007/11/19 6 Qspeed Semiconductor Confidential
SMPS Function Block 2007/11/19 7 Qspeed Semiconductor Confidential
Power Semi’s are the Key to Energy Efficiency The largest cause of energy loss in a power supply is due to the power semiconductor components. Qspeed Semi will address these component needs, with the Q-Series PFC Rectifier being just the first… A The Q-Series PFC Rectifier A Displays B CPU C D D Memory Memory Media The Flow of Power in an AC-DC Power Supply From Wall to Load 2007/11/19 8 Qspeed Semiconductor Confidential
Why Should We Need PFC ? 1/2 2007/11/19 9 Qspeed Semiconductor Confidential
Why Should We Need PFC ? 2/2 2007/11/19 10 Qspeed Semiconductor Confidential
Control Methods for Active Power Factor Correction 2007/11/19 11 Qspeed Semiconductor Confidential
DCM PFC Inductor Current 2007/11/19 12 Qspeed Semiconductor Confidential
CCM PFC Inductor Current I mosfet I diode 2007/11/19 13 Qspeed Semiconductor Confidential
Power Diode Switching Behavior 2007/11/19 14 Qspeed Semiconductor Confidential
Additional Switching Current Spike Caused by Diode Qrr Current Spike Induced by Qrr Current Spike Induced by RCD Snubber 2007/11/19 15 Qspeed Semiconductor Confidential
Power MOSFET Switching Behavior Current Spike Induced Addition Switching Loss 2007/11/19 16 Qspeed Semiconductor Confidential
PFC Diode Reverse Recovery � Efficiency � The area under the zero Reverse Recovery Current @ 400V, 5A, line represents energy 200A/us, 125C and charge stored in the 8 diode (Qrr). Less is 7 better. 6 5 � 4 This “reverse recovery 3 energy” flows through 2 the FET during turn on 1 causing low efficiency. IF(A) SiC 0 -1 � Compared to traditional -2 ultrafast diodes, -3 Std ultrafast Q-series Rectifiers: Q-Series -4 – Reduce the temp of the -5 Snappy Type PFC FET by 5 to 10 ° C. -6 – Improve efficiency up -7 to 2% -8 40 50 60 70 80 90 100 110 120 130 140 150 160 170 – Improve power density up to 10%. t(ns) PFC – Generate less noise DIODE HV + L1 OUT Filter Bridge AC IN - Control 2007/11/19 17 Qspeed Semiconductor Confidential
Q-Series has lowest EMI of all UF rectifiers: Qspeed 8A LQA08TC600 7JW12 #2375 Champion PFC Eval. Rev1. Bd#A 120VAC, 400W, 30 Min. Soak FCC15 Class A Neutral 2007/11/19 18 Qspeed Semiconductor Confidential
…including SiC: Cree SiC 10A CSD10060A #A Champion PFC Eval. Rev1. Bd#A 120VAC, 400W, 30 Min. Soak FCC15 Class A Neutral 8dB more EMI than Q-Series 2007/11/19 19 Qspeed Semiconductor Confidential
Qrr v.s. Tj for Various Technologies: Q RR (nC) vs. T J (Junction Temperature) I F = 8A, dI/dt=-200A/us, V R =-400V 100 90 Fairchild ST - TANDEM 80 RHRP860 STT806DTI 70 60 Qrr in nC 50 Cree CSD10060 40 30 Q Speed 20 LQA08TC600 10 0 0 C 10 C 20 C 30 C 40 C 50 C 60 C 70 C 80 C 90 C 100 C 110 C 120 C 130 C 140 C 150 C 160 C T J 2007/11/19 20 Qspeed Semiconductor Confidential
Q-Series Forward Losses Improve with Temperature � So the losses versus temperature tend to balance… Forward Voltage vs. Junction Temperature 2.4 Q-Series 2.2 2 Vf (V) at 5A 1.8 1.6 1.4 Cree 1.2 1 0 C 20 C 40 C 60 C 80 C 100 C 120 C 140 C Tj 2007/11/19 21 Qspeed Semiconductor Confidential
Q-Series Diode Test Example – (1) 2007/11/19 22 Qspeed Semiconductor Confidential
Q-Series Diode Test Example – (2) � Customer test report comparing SiC diode from Cree with Qspeed: – Efficiency is within 0.2% MOSFETs run 4.5 ° C cooler – with Qspeed – Almost all other components run cooler with Qspeed � This customer was paying $4.00 for Cree SiC diodes. Qspeed would be <<$2.00. 2007/11/19 23 Qspeed Semiconductor Confidential
Q-Series Diode Test Example – (4) 1KW Power Supply @ the following conditions - PS2 Mechanical Size - 90VAC/50HZ Line Input - 67 KHz Synchronized Frequency in PFC and PWM, - 4 pcs SPW20N60C3 in PFC Stage (no snubber circuit) - Tamb = 25 degreeC LQA08TC600 RHRP1560 73 ℃ 92 ℃ Tcase, diode 71 ℃ 93 ℃ Tcase, FET Reduce PFC MOSFET to 3 pcs SPW20N60C3 2007/11/19 24 Qspeed Semiconductor Confidential
25 Q-Series Diode Test Example – (5) Qspeed Semiconductor Confidential 50” PDP Power Board 2007/11/19
PWM MOSFET PWM PFC PFC Choke & Transformer Diode Snubber Choke Snubber Diode PFC MOSFET#2 PFC MOSFET#1 Bridge Rectifier STTH12R06 + Lossless ZVS Sbubber 2007/11/19 26 Qspeed Semiconductor Confidential
PWM MOSFET PWM Transformer PFC Diode PFC Choke PFC MOSFET#2 PFC MOSFET#1 Bridge Rectifier LQA08TC600 without Any Snubber 2007/11/19 27 Qspeed Semiconductor Confidential
X-Series Rectifiers � Designed to be a direct drop-in replacement for ST “Tandem” ultrafast rectifiers � Similar VF characteristics, but better than ST at 25 ° C � Similar Qrr values � Much softer recovery – Straightforward replacement – Fewer noise problems – Can eliminate snubbing � Cost: Significantly Lower � Sampling Q1, 2007 2007/11/19 28 Qspeed Semiconductor Confidential
Direct Replacement with Qspeed Rectifiers Currently using: Replace with: Result: Silicon Carbide Same efficiency, much lower cost 1 Q-Series Rectifiers (simple drop-in direct replacement) Tandem +0.5% efficiency, lower cost Q-Series* 2 with snubbers (*no snubber required) Tandem Same or higher efficiency, lower cost X-Series 3 w/o snubbers (simple drop-in direct replacement) Std ultrafast Try X-Series* +2% efficiency, lower cost 4 with snubbers or Q-Series* (*no snubber required) Std ultrafast The super-cheap market is unprofitable, Don’t bother and will decline soon w/o snubbers 2007/11/19 29 Qspeed Semiconductor Confidential
Qspeed PFC Product Family � Products targeted to match the needs of the power level and topology: Power 800- level 75-150W 125-200W 200-400W 400-800W 600-1kW 1.5kW Operating CCM or CCM CCM CCM mode DCM DCM DCM 3A 5A 8A 15A 600V Q-Series LQA03TC600 LQA05TC600 LQA08TC600 LQA15AC600 1A 4A 6A 8A 15A 20A 600V X-Series LXA01T600 LXA04T600 LXA06T600 LXA08T600 LXA15T600 LXA20T600 2007/11/19 30 Qspeed Semiconductor Confidential
31 4. Future Product Roadmap Qspeed Semiconductor Confidential 2007/11/19
32 Qspeed Semiconductor Confidential 2007/11/19
Qspeed Semiconductor’s Product Roadmap A Displays B CPU C D D Memory Memory Media The Flow of Power in an AC-DC Power Supply From Wall to Load 2007/11/19 33 Qspeed Semiconductor Confidential
Qspeed Semiconductor’s Impact on Power Efficiency Qspeed Semiconductor’s technology will help power +6.0% Power Supply Efficiency Gain supply mfr’s boost their D Super-Efficient PFC FET energy efficiency by more 2-5% than 5 points: +5.0% +4.0% New, Super-Efficient C Input Rectifier Bridge 0.5- 1.0% Technology +3.0% New, Super-Efficient B Output Rectifier Sampling Q1-Q2 2007 0.5- 1.0% Technology +2.0% Super-Efficient A 600V PFC & Now Sampling, Production in Q4 +1.0% 0.5- 2.0% PDP Rectifiers +0.5% 2007/11/19 34 Qspeed Semiconductor Confidential
End of Presentation – Thank You! Contacts: Jason Hsu, Sr. Application Engineer, Asia Email: jason@qspeed.com Taine Wu, Sales Director, Asia Email: taine@qspeed.com
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