Quantum Information with Solid-State Devices VO 141.246 SS2012 - PowerPoint PPT Presentation

Quantum Information with Solid-State Devices VO 141.246 SS2012 Dr. Johannes Majer Lecture 6

tunnel junction

Shadow 1. ele c tron b e a m w riting 2. d e v elop m e nt e - e - e - e - e - e - Evaporation PMM A PMM A PMM A PMM A / M A A Substra t e 4. o xid a tion 3. first alu minu m e v a pora tion Al Al O 2 O 2 5. s e c ond alu minu m e v a pora tion 6. lift-off Al Al

RF SET LC tank circuit, impedance transformer

! 3 x 10 1 0.8 0.6 [( ! 2 ! ! 1 )/2 | 2E c /e] 0.4 Source Drain Voltage (V) 0.2 0 [1/2 | 0] ! 0.2 ! 0.4 [( ! 1 ! ! 2 )/2 | ! 2E c /e] ! 0.6 ! 0.8 ! 1 ! 1 ! 0.5 0 0.5 1 1.5 2 Gate Charge n g =(V g C g )/e

Superconducting SET ! 3 x 10 2 1.5 [( ! /E c +1/2)( " 2 ! " 1 ) | 4 ! /e+2E c /e] 1 [ ! /E c ( " 2 ! " 1 )+1/2 | 4 ! /e] Source Drain Voltage (V) 0.5 C 2 C 2 e 0 C 1 C 1 e ! 0.5 [ ! /E c ( " 1 ! " 2 )+1/2 | ! 4 ! /e] 0 1 1 0 ! 1 [( ! /E c +1/2)( " 1 ! " 2 ) | ! 4 ! /e ! 2E c /e] ! 1.5 ! 2 ! 1 ! 0.5 0 0.5 1 1.5 2 Gate Charge n g =(V g C g )/e

Josephson quasi particle cycle − 3 x 10 2 1.5 [ − κ 1 (3/2+ ∆ /E c )+1 | 2 ∆ /e + 3E c /e] [ κ 2 (3/2+ ∆ /E c ) − 1 | 2 ∆ /e + 3E c /e] 1 [ − κ 1 (1/2+ ∆ /E c )+1 | 2 ∆ /e + E c /e] 0.5 [ κ 2 (1/2+ ∆ /E c ) − 1| 2 ∆ /e + E c /e] 0 C 2 C 2 C 2 2e [ κ 2 (1/2+ ∆ /E c ) − 1 | − 2 ∆ /e − E c /e] [ − κ 1 (1/2+ ∆ /E c )+1 | − 2 ∆ /e − E c /e] − 0.5 C 1 C 1 C 1 e e − 1 [ κ 2 (3/2+ ∆ /E c ) − 1 | − 2 ∆ /e − 3E c /e] [ − κ 1 (3/2+ ∆ /E c )+1 | − 2 ∆ /e − 3E c /e] 0 2 2 1 1 0 − 1.5 − 2 − 1 − 0.5 0 0.5 1 1.5 2 Gate Charge n g =(V g C g )/e

Superconducting RF-SET