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Russian Science Technology and Education Conference Minneapolis, Minnesota, October 5-9, and Phoenix, Arizona, October 12-16, 2020 Prospects for the production of high- performance solar cells in space Nikiforov A. I., Preobrazhensky V.V,


  1. Russian Science Technology and Education Conference Minneapolis, Minnesota, October 5-9, and Phoenix, Arizona, October 12-16, 2020 Prospects for the production of high- performance solar cells in space Nikiforov A. I., Preobrazhensky V.V, Pchelyakov O.P. Rzhanov Institute of Semiconductors Physics SB RAS, Novosibirsk, Russia

  2. www.isp.nsc.ru

  3. Examples of vacuum technological equipment

  4. New generation of Automated Compact MBE-CBE Installation «Katun 100» industrial focused, very convenient in operation Installation depending on directions of its use can consist of the several specialized vacuum chambers: chambers of a loading - unloading of plates – substrates (2 cartridges on 7 plates in diameter of 102 mm); chambers epitaxial growth of elementary semiconductors (Si, Ge), metal, dielectric layers are supplied with electron beam evaporators, gas and plasma sources of molecular beams; chambers for grovth of А 3 В 5, A3N and А 2 В 6 semiconductor compounds can contain up to 12 molecular sources, including ventille type for antimony, phosphorus and arsenic.

  5. Two-chamber installation «Katun 100» 7

  6. « ОКА - Т -ISS» project The equipment for molecular beam epitaxy in space V sc molecular screen Spaceship« ОКА - Т » Basic characteristics of М BE facility Weight, kg 230 Consumed power, kW 4,0 Duration of the experiment session, days 30 Number of sessions during active lifetime 14 Installation diagram of MBE Diameter of underlying substrate 100 mm

  7. Examples of specific applications in high-performance solar cells

  8. Creation of basic technological processes for the manufacture of a new generation of light flexible photovoltaic converters of space based solar energy on the basis of heteroepitaxial structures of AIIIBV compounds

  9. Flexible carrier for technology with substrate removal by dissolution Heterostructure Metallization based on ti/Al/Ti/Au layers Polyimide film 50 microns Silicone layer Au Al Flexible carrier ensures the safety of fragile heterostructures under mechanical influences. Жидкий азот 25 ° С 25 ° С 13

  10. Testing for resistance to bending deformations reverse contact direct contact

  11. Ultrahigh vacuum space MBE technology • Research and technology objective: Fabrication and processing of new materials, creation of semiconductor epitaxial quantum-sized nanostructures for physical research, comparative analysis of electron and optical properties of space and ground grown new objects • The basic tasks: Development of space technology for manufactory by MBE semiconductor multilayer alternative substrates and nanostructures for micro-, nano-, optoelectronic and ultrahigh efficiency solar cells, high frequency devices, photodetectors and phototransistors, night vision systems etc. for industrial application Blinov V.V., Zvorykin L.L., Ivanov A.I., Ignatyev А ., Mashanov V. I., Preobrazhenskiy V.V., Pcheljakov O. P., Sokolov L.V. Patent “The Device for MBE Growth of Nanomaterials in an Outer Space” № 2008118835 03.04.2009

  12. Discover New Materials Properties under Epi Growth Impurity • Design New Technologies and Atom << Devices with Advanced Materials 10 -14 Torr • Customize Materials Properties • Develop Micro, Nano, and ‘Atomo’-Tailored Materials • Atom-by-atom, atomic layer-by Useful atomic layer growth of a atoms crystalline thin film on an 10 -4 Torr atomically ordered substrate • Materials design at the atomic level • Cleanliness of semiconductor material also should be at a atomic level < 10 14 cm -3 ≤ 10 -10 N 0 Epitaxial Growth in Space

  13. The basic concept of orbital vacuum laboratory Conventional boundary of a wake Technological medium in the free space Aristotel [384-322 year B.C.] R.N. Kostoff [1970] L.Melfi at al. [1976] A.Ignatiev at al. [1986] L.L. Zvorikin at al. [1996]

  14. Possible configuration of installation "Shield" Blinov V.V., Zvorykin L.L., Ivanov A.I., Ignatyev А ., Mashanov V. I, Preobrazhenskiy V.V., Pcheljakov O. P., Sokolov L.V. Patent on The device for MBE growth of nanomaterials in an outer space № 2008118835 03.04/2009

  15. The Design-Layout Scheme of “Oka-T” of First Stage with an Air Lock and the Protective Molecular Screen of I stage General view Oka -T General view Oka in a flight configuration (with opened screen MBE)

  16. Oka-T - the Space complex of II stage Interorbital tow The specialised container The protective screen The automatic machine with Ballistic capsules The lock chamber and technological MBE installation Protective cover

  17. Epitaxyal growth of nanoheterostructures in conditions of an orbital international space station А F М P > 10 - 5 Pa P < 10 - 14 Pa Flight direction

  18. NEW DIRECTION OF SPACE ACTIVITY INDUSTRIAL PRODUCTION SEMICONDUCTOR NANO-HETEROSTRUCTURES IN ULTRAHIGH SPACE VACUUM CONDITIONS OF ORBITAL FLIGHT 24

  19. МАКС The international strategic consortium « Aerospace industrial systems » NPO " MOLNIYA", Aerospace corporation " Nika ", NPO " Energomash“ V.P.Glushko, МОК B "Mars", CAGI. N.E.Zhukovskogo, АНТК O.K.Antonova, PTI A.F. Ioffe, ISP A.V. Rzhanova Siberian Branch RAS, at al. 25

  20. STAGES OF MOLECULAR BEAM EPITAXY DEVELOPMENT ➢ The first stage (MBE yesterday) The development of a method has played a main role in deriving of new knowledges about processes on a surface of crystals during adsorptions, desorption, accommodation, diffusion of atoms and molecules during growth of thin films and nanostructures ➢ The second stage (MBE today) MBE method becomes main technology for production of multilayer heterosistems with quantum-sized structures for researches and device applications ➢ Third stage (MBE tomorrow) Emerging of a new generation of technology for realization all modifications of methods MBE + LPCVD + CBE in ground cluster installations, and also in conditions of open deep space behind a molecular screen

  21. Prospects for the international cooperation New generation of nanoelectronics, nanophotonics and photovoltaic ➢ Joint investigation of fundamental processes on clean surface of semiconductors and self-organization phenomena during MBE, CBE and CVD growth of nanostructures in ground and in space ultra vacuum condition ➢ Joint experimental studies, theoretical modeling and comparative analysis of electron and optical properties of space and ground grown nanostructures ➢ Joint research, development and production of new types of nanoscale heterostructures for solar cells, high frequency devices, photodetectors and phototransistors, night vision systems for industrial application, including manufactory in space ➢ Joint development and production of optimized nanotechnological equipment for MBE, CBE, CVD and so on in space orbital flight ➢ Mutual contacts, scientific and business conferences and workshops

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