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NANDOS NANDOS Nanophotonic and Nanoelectronic Devices from Oxide - PowerPoint PPT Presentation

NANDOS NANDOS Nanophotonic and Nanoelectronic Devices from Oxide Semiconductors STREP Specific challenges: Specific challenges: Project objectives: Project objectives: -Growing self-organised ZnO Development of ZnO based nanostructures


  1. NANDOS NANDOS Nanophotonic and Nanoelectronic Devices from Oxide Semiconductors STREP Specific challenges: Specific challenges: Project objectives: Project objectives: -Growing self-organised ZnO Development of ZnO based nanostructures nanostructures for applications in optoelectronics with a -Optimising the control of self- particular emphasis on lighting organisation technology -Demonstration of working applications with ZnO nanodevices Expected impact: Expected impact: Use of self organised ZnO nanostructures for novel applications Use of self organised ZnO nanostructures for novel applications in optoelectronics, sensors, transducers etc. in optoelectronics, sensors, transducers etc.

  2. NANDOS NANDOS STREP Partners Partners OSRAM OPTO SEMICONDUCTORS GmbH Coordinator Coordinator GERMANY TECHNISCHE UNIVERSITÄT BRAUNSCHWEIG Magnus Willander GERMANY GÖTEBORGS UNIVERSITET LIGHTLAB AKTIEBOLAG SWEDEN Sweden NATIONAL CENTRE FOR SCIENTIFIC RESEARCH "DEMOKRITOS" GREECE UNIVERSITE JOSEPH FOURIER GRENOBLE 1 FRANCE UNIVERSITÄT LEIPZIG GERMANY EU funding: 2 500 000 Euro EU funding: Duration: 36 months Duration: Start date: 2005-08-01 Start date: End date: 2008-07-31 End date: Project’ ’s website: s website: http:// Project http://fy.chalmers.se/pep/NANDOS.htm fy.chalmers.se/pep/NANDOS.htm

  3. a b Patterned arrays of ZnO nanopillars generated via postgrowth lithography / wet chemical etching: (a) photograph of PEN foil;(b) SEM picture of PEN foil enlarged of (a); c) SEM picture of silicon (100); (d) SEM enlarged of (c) (a) SEM image of ZnO nanorods grwon at low temperature on ITO (b) Digital photograph showing Various ZnO nanostructures grown on Si substrates white light emission from ZnO nanrod LED made from (a) at different conditions by vapor-liquid-solid .

  4. Left figure: PL spectra, measured at room temperature at three different excitation densities during laser pulse , 14.4 kW/cm2, 32 kW/cm2 and 56 kW/cm2. Right figure: Integrated emission intensity from nanorods as a FE-SEM images ZnO nanowires on a-plane function of optical pumping power. sapphire with determination of length and The inset shows the SEM image diameter of selected nanowires, grown by of the ZnO nanorods grown on Si PLD. The aspect ratio is correlated substrate . systematically to the growth parameters.

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