Measurements Measurements and and Simulations Simulations of of Single-Event Single-Event Ups Upsets ts in in a 28-nm 28-nm FPGA FPGA Consequences Consequences fo for front-end front-end electronics electronics in in PAND ANDA@F A@FAIR AIR M. Preston, P.-E. Tegn´ er (Stockholm University) H. Cal´ en, T. Johansson, K. Mak` onyi, P. Marciniewski (Uppsala University) M. Kavatsyuk, P. Schakel (University of Groningen) TWEPP 2017, Santa Cruz, USA
The FAIR facility (Darmstadt, Germany) Figure courtesy of FAIR website. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 2/21 Markus Preston - Stockholm University
The FAIR facility (Darmstadt, Germany) Antiprotons ( p ¯ p = 1 . 5 - 15 GeV/ c ) + Fixed hydrogen target (cluster/pellet) ⇒ p¯ p collision L (start-up) = 10 31 cm − 2 s − 1 First ¯ p beam 2025 Figure courtesy of FAIR website. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 2/21 Markus Preston - Stockholm University
The PANDA experiment p ¯ p Figure courtesy of PANDA collaboration website. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 3/21 Markus Preston - Stockholm University
The PANDA experiment Electromagnetic Calorimeter (EMC) ∼ 15000 PbWO 4 scintillating crystals (cooled to -25 ◦ C) p Three parts: Barrel Forward Endcap Backward Endcap p ¯ 99% of 4 π around Interaction Point Photo detectors: APDs/VPTTs Dynamic range: 10 MeV - 14.6 GeV Figure courtesy of PANDA collaboration website. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 3/21 Markus Preston - Stockholm University
Front-end electronics in the Electromagnetic Calorimeter ◮ FPGA-based sADC ◮ Input: Up to 32 photo detectors per board ◮ 2 28-nm FPGAs per board Figure courtesy of P. Marciniewski. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 4/21 Markus Preston - Stockholm University
Front-end electronics in the Electromagnetic Calorimeter ◮ FPGA-based sADC ◮ Input: Up to 32 photo 1.3 m detectors per board ◮ 2 28-nm FPGAs per board ◮ ∼ 600 boards in whole EMC. ◮ Placed around EMC perimeter. In Forward Endcap , ∼ 1.3 metres from beam pipe. Figure courtesy of M. Albrecht. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 4/21 Markus Preston - Stockholm University
Front-end electronics in the Electromagnetic Calorimeter ◮ FPGA-based sADC ◮ Input: Up to 32 photo 1.3 m detectors per board ◮ 2 28-nm FPGAs per board ◮ ∼ 600 boards in whole EMC. ◮ Placed around EMC perimeter. In Forward Endcap , ∼ 1.3 metres from beam pipe. ◮ Exposure to a high flux of particles ⇒ Radiation effects. ◮ Test using neutron and Figure courtesy of M. Albrecht. proton irradiations. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 4/21 Markus Preston - Stockholm University
Neutron and proton irradiations Neutron irradiation Proton irradiation ◮ At TSL, Uppsala, Sweden. ◮ At KVI-CART, Groningen, the Netherlands. ◮ Beam with continuous ◮ Three proton energies: 80, energy spectrum, 0-180 MeV. 100, 184 MeV. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 5/21 Markus Preston - Stockholm University
Neutron and proton irradiations Neutron irradiation Proton irradiation ◮ At TSL, Uppsala, Sweden. ◮ At KVI-CART, Groningen, the Netherlands. ◮ Beam with continuous ◮ Three proton energies: 80, energy spectrum, 0-180 MeV. 100, 184 MeV. General setup: ◮ Board perpendicular to beam. ◮ Beam covering ∼ half of board. ◮ One FPGA continuously monitored and read out. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 5/21 Markus Preston - Stockholm University
Single-Event Upsets (SEUs) in FPGA configuration ◮ SEU: Radiation-induced transient effect, which may affect multiple parts of front-end board. ◮ Here: study the effect in the FPGA configuration memory. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 6/21 Markus Preston - Stockholm University
Single-Event Upsets (SEUs) in FPGA configuration ◮ SEU: Radiation-induced transient effect, which may affect multiple parts of front-end board. ◮ Here: study the effect in the FPGA configuration memory. ◮ Use IP core for error monitoring and correction ◮ Monitored during irradiations ◮ Can correct Single-Bit Upsets ◮ Can correct Multi-Bit Upsets in adjacent memory frames (using Error Correction Code) ◮ Cannot correct Multi-Bit Upsets within the same memory frame Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 6/21 Markus Preston - Stockholm University
FPGA configuration memory tests Measurement process Start Configure FPGA Beam on Beam off Detect SEU Log file SEU time + address Yes Correctable? No Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 7/21 Markus Preston - Stockholm University
SEU cross section The cross section for an SEU in the FPGA is given by N SEU σ SEU = Φ · N bits , where ◮ N SEU = Number of SEUs during irradiation, ◮ Φ = Particle fluence (number of incident particles per cm 2 ), ◮ N bits = Number of configuration-memory bits. Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 8/21 Markus Preston - Stockholm University
Experimental results - Neutron irradiation Good agreement with previous measurements on this device: SEU Cross Section [10 − 15 cm 2 bit − 1 ] This work 14 [1] [2] 12 [3] [4] 10 8 6 4 The Svedberg Laboratory Los Alamos Neutron Science Center (TSL) (LANSCE) Cross section assuming only neutrons > 10 MeV cause SEU Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 9/21 Markus Preston - Stockholm University
Experimental results - Proton irradiation Good agreement with previous measurements on this device: SEU Cross Section [10 − 15 cm 2 bit − 1 ] 14 This work [5] 12 [6] [7] 10 8 6 4 2 60 80 100 120 140 160 180 Proton energy [MeV] Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 10/21 Markus Preston - Stockholm University
Experimental results - Proton irradiation Good agreement with previous measurements on this device: SEU Cross Section [10 − 15 cm 2 bit − 1 ] 14 This work [5] 12 [6] [7] 10 Procedure validated! 8 6 4 2 60 80 100 120 140 160 180 Proton energy [MeV] Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 10/21 Markus Preston - Stockholm University
What does this mean for PANDA? From neutron and proton irradiations σ SEU determined at specific energies. Conditions during PANDA operation Continuous energy spectrum of particles at front-end board location. SEU rate = ? Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 11/21 Markus Preston - Stockholm University
What does this mean for PANDA? From neutron and proton irradiations σ SEU determined at specific energies. Needed: Way to predict SEU rate in PANDA, using results from irradiations. Conditions during PANDA operation Continuous energy spectrum of particles at front-end board location. SEU rate = ? Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 11/21 Markus Preston - Stockholm University
What does this mean for PANDA? From neutron and proton irradiations σ SEU determined at specific energies. Solution: Monte Carlo simulations 1) GEANT4 simulation of energy deposits in microelectronics ⇒ σ SEU ( E ) 2) pandaROOT MC simulation of PANDA setup ⇒ Φ( E ) Conditions during PANDA operation Continuous energy spectrum of particles at front-end board location. SEU rate = ? Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 11/21 Markus Preston - Stockholm University
GEANT4 simulation of energy deposition in silicon FPGA=Silicon-based microelectronics device Particle beam into Si ⇒ Energy deposits One memory cell contains Four cubic Sensitive Volumes (size: d 3 ) Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 12/21 Markus Preston - Stockholm University
Energy deposition by protons How much energy is deposited by 100 MeV protons in one of these Sensitive Volumes? Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 13/21 Markus Preston - Stockholm University
Energy deposition by protons How much energy is deposited by 100 MeV protons in one of these Sensitive Volumes? 10 5 10 4 10 3 Counts per bin 10 2 Nuclear reactions of p in Si Electronic 10 1 stopping of p in Si 10 0 1 10 100 Energy deposit [keV] Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 13/21 Markus Preston - Stockholm University
Energy deposition by protons How much energy is deposited by 100 MeV protons in one of these Sensitive Volumes? 10 5 Critical Energy: E crit 10 4 10 3 Counts per bin E dep > E crit ⇒ SEU 10 2 10 1 10 0 1 10 100 Energy deposit [keV] Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 13/21 Markus Preston - Stockholm University
Energy deposition by protons How much energy is deposited by 100 MeV protons in one of these Sensitive Volumes? 10 5 Critical Energy: E crit 10 4 10 3 Counts per bin E dep > E crit ⇒ SEU 10 2 10 1 σ SEU, sim ∝ N SEU 10 0 1 10 100 Energy deposit [keV] Measurements and Simulations of Single-Event Upsets in a 28-nm FPGA 13/21 Markus Preston - Stockholm University
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