IRST SiPM characterizations and Application Studies G. Pauletta for - PowerPoint PPT Presentation

IRST SiPM characterizations and Application Studies G. Pauletta for the FACTOR collaboration Outline 1. Introduction (who and where) 2. Objectives and program (what and how) 3. characterizations 4. Applications 28 June 2007 G. Pauletta: PD07, Kobe, Japan 1

FACTOR 3-year project (2007 – 2009) funded by INFN Participants: INFN laboratories and/or universities at:Trieste, Udine, Messina collaborating with ITC (now Bruno Kessler Foundation) -IRST Trento, Italy Background: 2005: INFN funds project (DASiPM) for the development of SiPM devices, mainly for PET application 2007: INFN funds continuation of DASIPM and expands development to other applications (FACTOR) INFN-Trieste has a long – standing collaboration with IRST in the development of Silicon-based detectors for application in accelerator, underground and space – based experimental particle physics. 28 June 2007 G. Pauletta: PD07, Kobe, Japan 2

Motivations The FACTOR collaboration interested in the development of the device and in its optimization for application to: Present application interests: • Calorimetry with fiber-based optical readout • Large – area scintillator – based muon counters • Scintillating fiber – based tracking • future space experiments for detection of UHECR • FEL studies and instrumentation • future large – area, ground – based x-ray telescopes Action Plan: • comparative studies for detailed understanding of device characteristics • Application tests •Optimization of properties as a function of application 28 June 2007 G. Pauletta: PD07, Kobe, Japan 3

Present IRST technology* *C. Piemonte “A new Silicon Photomultiplier structure for blue light detection” NIMA 568 (2006) 20 7E+05 n + p 19 6E+05 Doping Doping conc. (10^) [1/cm^3] Shallow-Junction SiPM Field 18 5E+05 E field (V/cm) 17 4E+05 n+ 16 3E+05 π epi 15 2E+05 14 1E+05 p+ subst. 13 0E+00 0 0.2 0.4 0.6 0.8 1 1.2 1.4 depth (um) Distinguishing characteristics: 1) Very shallow junction 2) ARC optimized for short wavelenghts (~400nm) 3) polysilicon quenching resistors 28 June 2007 G. Pauletta: PD07, Kobe, Japan 4

Development History Development started at the beginning of 2005 1mm Baseline geometry SiPM structure: - 25x25 cells 1mm - microcell size: 40x40mm 2 Development has continued over last two years: several Geometry of baseline model succeeding production runs to NOT optimized formaximum PDE to develop geometries for ( fill factor ~20%) . different applications and to optmize operational characteristics 28 June 2007 G. Pauletta: PD07, Kobe, Japan 5

Principal characteristics of interest • Gain • Noise � dark count � afterpulsing � optical cross-talk • PhotoDetection Efficiency (PDE) • Dynamic Range • Time characteristics � rise – time, resolution, recovery time • Radiation hardness • Sensitivity to magnetic fiels Other considerations •Packaging •Readout electronics 28 June 2007 G. Pauletta: PD07, Kobe, Japan 6

Device characterization 1,2 • Static measurents: IV measurements for rapid test of device properties, uniformity and stability • Dynamic tests: Output signal characterization and stability using noise signals in the dark � Signal rise time and fall time � Gain � Dark count � Optical cross – talk � Afterpulsing • PhotoDetection Efficiency 1)All characterizations reported here are for 1mm 2 devices 2) for a thorough characterization of the first SiPM prototypes fabricated at ITC-irst see C. Piemonte, IEEE TNS, February 2007 28 June 2007 G. Pauletta: PD07, Kobe, Japan 7

Static measurements-1 Rapid check functionality & uniformity 1µ IRST 00 Sensitive to principal characteristics IRST 02 IRST 08 IRST 11 I tot 100n IRST 03 = − dark current I I I Baseline version dc tot leak Current (A) ( ) is prop. to gain G and dark count DC 10n I bd ( ) I leak ∝ I G . DC dc ∝ ∝ and since G V , DC V 1n ∝ 2 I V V BD dc 100p 0 10 20 30 40 reverse Voltage (V) SiPM V bd (V) I bd (nA) IRST-00 32,5 3,6 IRST-02 33,0 3,6 IRST 1mm 2 IRST-03 33,0 3,1 second batch IRST-08 33,5 3,2 IRST devices generally very uniform IRST-11 33,5 3,8 28 June 2007 G. Pauletta: PD07, Kobe, Japan 8

Static measurements-2 100µ 10µ Blue enhanced 3x3 SiPM blue enhanced 1x1 SiPM PHOT 18 PHOT 21 PHOT 19 PHOT 22 PHOT 20 10µ PHOT 23 1µ 1µ 100n Current (A) Current (A) 100n 10n 10n 1n 1n 100p 0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 reverse Voltage (V) reverse Voltage (V) SiPM V bd (V) I bd (nA) Phot-18 52,5 125,8 Photonique 9mm 2 Phot-19 49,5 260,6 Blue sensitive Phot-20 49,0 98,7 Phot-21 51,0 6,5 Photonique 1mm 2 Phot-22 53,0 6,9 Green-red sensitive Phot-23 55,0 6,0 28 June 2007 G. Pauletta: PD07, Kobe, Japan 9

Static measurements-3 250,0µ Phot 21 1,8m Phot 22 IRST 00 200,0µ 1,6m IRST 02 Phot 23 IRST 03 1,4m IRST 08 IRST 11 150,0µ 1,2m Current (A) 1,0m Current (A) 100,0µ 800,0µ 600,0µ 50,0µ 400,0µ 200,0µ 0,0 0,0 -200,0µ -0,2 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 -1 0 1 2 3 4 5 6 7 8 9 10 11 direct Voltage (V) direct Voltage (V) SiPM Rq (Ohm) SiPM Rq (kOhm) IRST-00 669 Phot-18 2,29 Photonique 9mm 2 IRST-02 612 Phot-19 1,52 IRST 1mm 2 Blue sensitive IRST-03 619 Phot-20 1,24 second batch Phot-21 39,8 IRST-08 697 Photonique 1mm 2 Phot-22 17,4 IRST-11 590 Green-red sensitive Phot-23 37,8 × ≈ Ω 625 390 k 28 June 2007 G. Pauletta: PD07, Kobe, Japan 10

Static measurements-4 90,0p 450,0p 85,0p 400,0p IRST 00 80,0p Photo 21 IRST 02 350,0p Photo 22 IRST 03 75,0p IRST 08 Photo 23 Capacitance (F) 300,0p Capacitance (F) IRST 11 70,0p 250,0p 65,0p 200,0p 60,0p 150,0p 55,0p 100,0p 50,0p 50,0p 45,0p 0,0 0 6 12 18 24 30 0 10 20 30 40 50 reverse Voltage (V) reverse Voltage (V) SiPM Vdep (V) Cdep (pF) IRST-00 21 54 IRST-02 21 55 ÷ 625 ≈ 90 fF IRST-03 21 55 IRST-08 21 55 IRST-11 21 54 28 June 2007 G. Pauletta: PD07, Kobe, Japan 11

dynamic measurements-1 Amplifier used for fast characterization of SiPMs: Agilent ABA-52563 3.5 GHz RFIC Amplifier (economic, compact, internally 50- Ω matched, gain ~ 20 dB) Dimensions 1.8 x 1.8 mm2 Orange trace: input from pulse generator, FWHM = 0.9 ns, tr = tf = 300 ps Red trace: amplifier’s output 28 June 2007 G. Pauletta: PD07, Kobe, Japan 12

dynamic measurements-2 IRST :recovery time ~70 ns ≈ Ω Formitech F1 : R 0 . 9 M , q ≈ recovery t ime 400 ns MRS SiPMs have 2.5 to 50 times larger Rq values than IRST (polysilicon) devices � longer recovery rimes 28 June 2007 G. Pauletta: PD07, Kobe, Japan 13

dynamic measurements-4 1 mm 2 type A VBD ≈ 33 V D.C.( Δ V=2V) ≈ 1.5 MHz Linear fit intercept with V-axis gives VBD = 33.04 V 28 June 2007 G. Pauletta: PD07, Kobe, Japan 14

dynamic measurements-4 1 mm2 MRS devices VBD ≈ 20 V D.C.( Δ V=2V) ≈ 2 MHz 1 mm2 MRS device VBD ≈ 41 V D.C.( Δ V=2V) ≈ 2.2 MHz 28 June 2007 G. Pauletta: PD07, Kobe, Japan 15

dynamic measurements-5 type “A”, D.C.( Δ V=2V) ≈ 1.5 MHz type “B”, D.C.( Δ V=2V) ≈ 2- 3 MHz type “D”, D.C.( Δ V=2V) ≈ 1 MHz 28 June 2007 G. Pauletta: PD07, Kobe, Japan 16

dynamic measurements-6 Temperature Dependences - 1 Measurements performed in a climatic chamber (with humidity control) The amplifier was located outside the chamber, connection via a special 18 GHz ft dV BD /dT ≈ 78 mV/C 50 Ω cable 28 June 2007 G. Pauletta: PD07, Kobe, Japan 17

dynamic measurements-7 Temperature Dependences - 2 dV BD /dT ≈ 72 mV/C 28 June 2007 G. Pauletta: PD07, Kobe, Japan 18

Temperature dynamic measurements-8 dependences - 3 28 June 2007 G. Pauletta: PD07, Kobe, Japan 19

The following are static measurements performed at ITC-IRST and reported on at a recent (June 13 th 2007) workshop at Perugia 28 June 2007 G. Pauletta: PD07, Kobe, Japan 20

Signal properties 100ns 100ns 100ns Charge spectra – T int =100ns C. Piemonte et al. “Characterization of the first prototypes of SiPM fabricated at ITC-irst” IEEE TNS, February 2007 1.0 0.9 0.8 T=22 o C s 0.7 Normalized Count Well defined peak of the 0.6 single pulses. 0.5 Gaussian distribution width 0.4 determined by: 0.3 - noise of the system 0.2 - tiny gain non-uniformities 0.1 0.0 d Tails due to: a -2.0E-09 -1.5E-09 -1.0E-09 -5.0E-10 0.0E+00 optical cross-talk + afterpulse Charve (V*s) 28 June 2007 C. Piemonte: June 13 th , 2007, Perugia G. Pauletta: PD07, Kobe, Japan 21

Gain & Dark count Performed in the climatic chamber. Devices from the third batch DC G Ampl 4.0E+06 3.0E+06 -5°C -5°C 3.5E+06 5°C 2.5E+06 5°C 3.0E+06 15°C 15°C 2.0E+06 25°C 2.5E+06 25°C Dark count 2.0E+06 1.5E+06 1.5E+06 Gain 1.0E+06 1.0E+06 5.0E+05 5.0E+05 0.0E+00 0.0E+00 28.5 29.5 30.5 31.5 32.5 33.5 34.5 35.5 0 1 2 3 4 5 6 7 8 9 10 Bias voltage (V) Over-voltage (V) 31 2.50E+06 30.5 2.00E+06 30 1.50E+06 Vbd VBD (V) 29.5 Gain Gain 1.00E+06 29 y = -40375x + 2E+06 5.00E+05 28.5 y = 0.0765x + 28.833 28 0.00E+00 -10 0 10 20 30 Temp. (C) 28 June 2007 C. Piemonte: June 13 th , 2007, Perugia G. Pauletta: PD07, Kobe, Japan 22