Exploring the Effect of Device Aging on Static Power Analysis Attacks - - PowerPoint PPT Presentation

▶
exploring the effect of device aging on static power
SMART_READER_LITE
LIVE PREVIEW

Exploring the Effect of Device Aging on Static Power Analysis Attacks - - PowerPoint PPT Presentation

Sep 19, 2022 6 likes •508 views

RUHR-UNIVERSITT BOCHUM Exploring the Effect of Device Aging on Static Power Analysis Attacks Naghmeh Karimi 1 , Thorben Moos 2 and Amir Moradi 2 1 University of Maryland, Baltimore County, USA 2 Ruhr University Bochum, Horst Grtz Institute for

slide-1
SLIDE 1

RUHR-UNIVERSITÄT BOCHUM

Exploring the Effect of Device Aging on Static Power Analysis Attacks

Naghmeh Karimi1, Thorben Moos2 and Amir Moradi2

1University of Maryland, Baltimore County, USA 2Ruhr University Bochum, Horst Görtz Institute for IT Security, Germany

28 August 2019

slide-2
SLIDE 2

RUHR-UNIVERSITÄT BOCHUM

Outline

1

Introduction Static Power Consumption Device Aging

2

Target

3

Simulation Results

4

Practical Results Setup 65 nm ASIC 150 nm ASIC

5

Conclusion

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 1

slide-3
SLIDE 3

Section 1 Introduction

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 2

slide-4
SLIDE 4

RUHR-UNIVERSITÄT BOCHUM

Static Leakage Currents

Introduction

Source: Leakage Models for High Level Power Estimation, Domenik Helms, PhD thesis, Carl von Ossietzky Universität Oldenburg, 2009 Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 3

slide-5
SLIDE 5

RUHR-UNIVERSITÄT BOCHUM

Static Leakage Development

Introduction

Source: Impact of technology scaling on leakage power in nano-scale bulk CMOS digital standard cells, Z. Abbas and M. Olivieri, Microelectronics Journal, Vol. 45 Issue 2, 2014 Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 4

slide-6
SLIDE 6

RUHR-UNIVERSITÄT BOCHUM

Data Dependency of CMOS Standard Cells: NOT Gate

Introduction

Formation of inactive transistors across power supply path for different inputs*: A = 0: A = 1:

*Active (conducting) transistors are replaced by ideal wires in this simplification.

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 5

slide-7
SLIDE 7

RUHR-UNIVERSITÄT BOCHUM

Data Dependency of CMOS Standard Cells: NAND Gate

Introduction

Formation of inactive transistors across power supply path for different inputs*: B = 0: B = 1: A = 0:

*Active (conducting) transistors are replaced by ideal wires in this simplification.

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 6

slide-8
SLIDE 8

RUHR-UNIVERSITÄT BOCHUM

Data Dependency of CMOS Standard Cells: NAND Gate

Introduction

Formation of inactive transistors across power supply path for different inputs*: B = 0: B = 1: A = 1:

*Active (conducting) transistors are replaced by ideal wires in this simplification.

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 7

slide-9
SLIDE 9

RUHR-UNIVERSITÄT BOCHUM

Device Aging

Introduction

  • Device aging is an important failure mechanism in nanoscale designs that

jeopardizes the reliability of electronic devices

  • Performance of nanoscale CMOS circuits degrades over their lifetime

⇒ Ultimate Failure

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 8

slide-10
SLIDE 10

RUHR-UNIVERSITÄT BOCHUM

Device Aging

Introduction

Circuit Aging Mechanisms

  • Time dependent dielectric Breakdown (TDDB)

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 9

slide-11
SLIDE 11

RUHR-UNIVERSITÄT BOCHUM

Device Aging

Introduction

Circuit Aging Mechanisms

  • Time dependent dielectric Breakdown (TDDB)
  • Electromigration (EM)

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 9

slide-12
SLIDE 12

RUHR-UNIVERSITÄT BOCHUM

Device Aging

Introduction

Circuit Aging Mechanisms

  • Time dependent dielectric Breakdown (TDDB)
  • Electromigration (EM)
  • Bias Temperature-Instability (BTI)

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 9

slide-13
SLIDE 13

RUHR-UNIVERSITÄT BOCHUM

Device Aging

Introduction

Circuit Aging Mechanisms

  • Time dependent dielectric Breakdown (TDDB)
  • Electromigration (EM)
  • Bias Temperature-Instability (BTI)
  • Hot Carrier Injection (HCI)

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 9

slide-14
SLIDE 14

RUHR-UNIVERSITÄT BOCHUM

Aging Mechanisms

Introduction

Negative Bias Temperature Instability (NBTI)

  • Cause: Holes creating traps between Si-SiO2 and substrate
  • Impact: Vth increase, especially for PMOS transistors

Hot Carrier Injection (HCI)

  • Cause: Electrons colliding with the gate oxide (rather than going only to the

conduction channel between source and drain)

  • Impact: Vth increase, especially for NMOS transistors

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 10

slide-15
SLIDE 15

RUHR-UNIVERSITÄT BOCHUM

Vth increase caused by NBTI

Introduction

∆Vthst = ANBTI · tox ·

  • Cox(Vdd − Vth) · e( Vdd−Vth

tox×E0 − Ea k×T ) · tst

0.25

∆VthNBTI = ∆Vthst × (1 −

  • η

trec trec + tst )

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 11

slide-16
SLIDE 16

RUHR-UNIVERSITÄT BOCHUM

Vth increase caused by HCI

Introduction

∆VthHCI = AHCI · α · f · e

Vdd−Vth tox·E1

· t0.5

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 12

slide-17
SLIDE 17

RUHR-UNIVERSITÄT BOCHUM

Impact of Aging on Vth of MOSFETs

Introduction

  • The threshold voltage of a MOSFET can be used as a parameter to regulate the

trade-off between its propagation delay and its leakage current

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 13

slide-18
SLIDE 18

RUHR-UNIVERSITÄT BOCHUM

Impact of Aging on Vth of MOSFETs

Introduction

  • The threshold voltage of a MOSFET can be used as a parameter to regulate the

trade-off between its propagation delay and its leakage current

  • Devices with a high threshold voltage are slower and can be used where timing is

not critical in order to reduce the leakage current

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 13

slide-19
SLIDE 19

RUHR-UNIVERSITÄT BOCHUM

Impact of Aging on Vth of MOSFETs

Introduction

  • The threshold voltage of a MOSFET can be used as a parameter to regulate the

trade-off between its propagation delay and its leakage current

  • Devices with a high threshold voltage are slower and can be used where timing is

not critical in order to reduce the leakage current

  • By aging a CMOS circuit the threshold voltage of devices increases and the design

starts to fail timing

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 13

slide-20
SLIDE 20

RUHR-UNIVERSITÄT BOCHUM

Impact of Aging on Vth of MOSFETs

Introduction

  • The threshold voltage of a MOSFET can be used as a parameter to regulate the

trade-off between its propagation delay and its leakage current

  • Devices with a high threshold voltage are slower and can be used where timing is

not critical in order to reduce the leakage current

  • By aging a CMOS circuit the threshold voltage of devices increases and the design

starts to fail timing

  • The aging procedure can be accelerated by applying increased supply voltages and

temperatures

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 13

slide-21
SLIDE 21

RUHR-UNIVERSITÄT BOCHUM

Impact of Aging on Vth of MOSFETs

Introduction

  • The threshold voltage of a MOSFET can be used as a parameter to regulate the

trade-off between its propagation delay and its leakage current

  • Devices with a high threshold voltage are slower and can be used where timing is

not critical in order to reduce the leakage current

  • By aging a CMOS circuit the threshold voltage of devices increases and the design

starts to fail timing

  • The aging procedure can be accelerated by applying increased supply voltages and

temperatures

  • The input-dependent leakage behavior of CMOS circuits changes non-linearly, also

depending on the switching activity during aging (i.e., high vs. low activity)

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 13

slide-22
SLIDE 22

Section 2 Target

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 14

slide-23
SLIDE 23

RUHR-UNIVERSITÄT BOCHUM

PRESENT Architecture

Target

Nibble-serial PRESENT implementation with single Sbox instance:

2 1 3 14 15

PLayer

... Sbox

Key nibble

4 4 64

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 15

slide-24
SLIDE 24

RUHR-UNIVERSITÄT BOCHUM

65 nm ASIC

Target

Chip Layout: Corner of the Die:

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 16

slide-25
SLIDE 25

Section 3 Simulation Results

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 17

slide-26
SLIDE 26

RUHR-UNIVERSITÄT BOCHUM

Simulated Input Dependency of Sbox Instance

Simulation Results

Accelerated aging at 90◦C and 1.416 V for 8 weeks (acceleration factor ≈ 80):

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 6 7 8 9 A B C D E F

Current [nA] Input Value

Week 0 Week 1 Week2 Week 3 Week 4 Week 5 Week 6 Week 7 Week 8

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 18

slide-27
SLIDE 27

RUHR-UNIVERSITÄT BOCHUM

Simulated Input Dependency of Sbox Instance

Simulation Results

Increased distinguishability after aging: Decreased distinguishability after aging:

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 19

slide-28
SLIDE 28

RUHR-UNIVERSITÄT BOCHUM

Simulated Input Dependency of Sbox Instance

Simulation Results

  • Input dependency of the Sbox instance changes completely during the aging

process (already after the first week of accelerated aging)

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 20

slide-29
SLIDE 29

RUHR-UNIVERSITÄT BOCHUM

Simulated Input Dependency of Sbox Instance

Simulation Results

  • Input dependency of the Sbox instance changes completely during the aging

process (already after the first week of accelerated aging)

  • Absolute leakage currents decrease

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 20

slide-30
SLIDE 30

RUHR-UNIVERSITÄT BOCHUM

Simulated Input Dependency of Sbox Instance

Simulation Results

  • Input dependency of the Sbox instance changes completely during the aging

process (already after the first week of accelerated aging)

  • Absolute leakage currents decrease
  • Input dependent variance between the leakage currents decreases as well

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 20

slide-31
SLIDE 31

RUHR-UNIVERSITÄT BOCHUM

Simulated Input Dependency of Sbox Instance

Simulation Results

  • Input dependency of the Sbox instance changes completely during the aging

process (already after the first week of accelerated aging)

  • Absolute leakage currents decrease
  • Input dependent variance between the leakage currents decreases as well
  • Static power side-channel attacks should become more difficult on aged devices

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 20

slide-32
SLIDE 32

RUHR-UNIVERSITÄT BOCHUM

Simulation: T-test and CPA on HW of Sbox Output

Simulation Results

Original device:

100 200 300 400 500 Number of measurements 103 5 10 15 t-statistics 50 100 150 200 250 Number of measurements 103

  • 4

4 Correlation 10-2

4 weeks aged:

100 200 300 400 500 Number of measurements 103 5 10 15 t-statistics 50 100 150 200 250 Number of measurements 103

  • 4

4 Correlation 10-2

8 weeks aged:

100 200 300 400 500 Number of measurements 103 5 10 15 t-statistics 50 100 150 200 250 Number of measurements 103

  • 4

4 Correlation 10-2

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 21

slide-33
SLIDE 33

Section 4 Practical Results

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 22

slide-34
SLIDE 34

RUHR-UNIVERSITÄT BOCHUM

Setup

Measurement Board: Climate Chamber and Scope:

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 23

slide-35
SLIDE 35

RUHR-UNIVERSITÄT BOCHUM

Sample Measurement

Setup

Sample Measurement Procedure with Stopping the Clock Signal: Time Leakage current

T1 T2

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 24

slide-36
SLIDE 36

RUHR-UNIVERSITÄT BOCHUM

Experiments

Practical Results

  • We have aged two distinct fresh samples of the 65 nm ASIC at 90◦C and 1.416 V for

8 consecutive weeks

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 25

slide-37
SLIDE 37

RUHR-UNIVERSITÄT BOCHUM

Experiments

Practical Results

  • We have aged two distinct fresh samples of the 65 nm ASIC at 90◦C and 1.416 V for

8 consecutive weeks

  • At 0 (initial state), 4 and 8 weeks of aging we have measured the susceptibility of the

PRESENT implementation to static power attacks (at 20◦C and 1.2 V)

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 25

slide-38
SLIDE 38

RUHR-UNIVERSITÄT BOCHUM

Experiments

Practical Results

  • We have aged two distinct fresh samples of the 65 nm ASIC at 90◦C and 1.416 V for

8 consecutive weeks

  • At 0 (initial state), 4 and 8 weeks of aging we have measured the susceptibility of the

PRESENT implementation to static power attacks (at 20◦C and 1.2 V)

  • The setup (esp. the board) to operate the ASICs while aging was distinct from the
  • ne for measurements in order to avoid that setup aging influences the results

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 25

slide-39
SLIDE 39

RUHR-UNIVERSITÄT BOCHUM

Sample 1: T-test and CPA on HW of Sbox Output

Practical Results

Original device:

100 200 300 400 500 Number of measurements 103 5 10 t-statistics 50 100 150 200 250 Number of measurements 103

  • 4

4 Correlation 10-2

4 weeks aged:

100 200 300 400 500 Number of measurements 103 5 10 t-statistics

50 100 150 200 250 Number of measurements 103

  • 4

4 Correlation 10-2

8 weeks aged:

100 200 300 400 500 Number of measurements 103 5 10 t-statistics 50 100 150 200 250 Number of measurements 103

  • 4

4 Correlation 10-2

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 26

slide-40
SLIDE 40

RUHR-UNIVERSITÄT BOCHUM

Sample 2: T-test and CPA on HW of Sbox Output

Practical Results

Original device:

100 200 300 400 500 Number of measurements 103 10 20 t-statistics 50 100 150 200 250 Number of measurements 103

  • 2

2 Correlation 10-2

4 weeks aged:

100 200 300 400 500 Number of measurements 103 10 20 t-statistics 50 100 150 200 250 Number of measurements 103

  • 2

2 Correlation 10-2

8 weeks aged:

100 200 300 400 500 Number of measurements 103 10 20 t-statistics 50 100 150 200 250 Number of measurements 103

  • 2

2 Correlation 10-2

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 27

slide-41
SLIDE 41

RUHR-UNIVERSITÄT BOCHUM

Comparison: Simulation vs. Experiments

Practical Results

Experiment Stage of aging

t-stat.

  • Corr. coeff.
  • Avg. total curr.

Simulation Original device 15.941 0.02283

  • Simulation

4 weeks aged 8.818 0.01682

  • Simulation

8 weeks aged 8.590 0.01340

  • Measurements sample 1

Original device 12.514 0.02801 8.6 µA Measurements sample 1 4 weeks aged 9.299 0.02410 8.0 µA Measurements sample 1 8 weeks aged 6.359 0.01718 7.5 µA Measurements sample 2 Original device 23.251 0.01472 7.5 µA Measurements sample 2 4 weeks aged 13.647 0.01465 7.2 µA Measurements sample 2 8 weeks aged 16.710 0.01147 6.9 µA

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 28

slide-42
SLIDE 42

RUHR-UNIVERSITÄT BOCHUM

Simultaneous Aging and Measuring - 150 nm Chip

Practical Results

1 2 3 4 5 6 7

Time [weeks]

1 2 3 4 5 6

MTD 105

1 2 3 4 5 6 7

Time [weeks]

4 8

Correlation 10-3

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 29

slide-43
SLIDE 43

Section 5 Conclusion

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 30

slide-44
SLIDE 44

RUHR-UNIVERSITÄT BOCHUM

Conclusion

  • Leakage currents of CMOS devices are reduced due to aging mechanisms

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 31

slide-45
SLIDE 45

RUHR-UNIVERSITÄT BOCHUM

Conclusion

  • Leakage currents of CMOS devices are reduced due to aging mechanisms
  • Static power side-channel attacks require more traces to succeed

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 31

slide-46
SLIDE 46

RUHR-UNIVERSITÄT BOCHUM

Conclusion

  • Leakage currents of CMOS devices are reduced due to aging mechanisms
  • Static power side-channel attacks require more traces to succeed
  • The data dependency of combinatorial circuits changes completely

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 31

slide-47
SLIDE 47

RUHR-UNIVERSITÄT BOCHUM

Conclusion

  • Leakage currents of CMOS devices are reduced due to aging mechanisms
  • Static power side-channel attacks require more traces to succeed
  • The data dependency of combinatorial circuits changes completely
  • Static power results taken from different phases of measurements do not correspond

to each other

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 31

slide-48
SLIDE 48

RUHR-UNIVERSITÄT BOCHUM

Conclusion

  • Leakage currents of CMOS devices are reduced due to aging mechanisms
  • Static power side-channel attacks require more traces to succeed
  • The data dependency of combinatorial circuits changes completely
  • Static power results taken from different phases of measurements do not correspond

to each other

  • Especially relevant when conducting attacks at increased temperatures and supply

voltages, as it fuels device degradation significantly

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 31

slide-49
SLIDE 49

RUHR-UNIVERSITÄT BOCHUM

Conclusion

  • Leakage currents of CMOS devices are reduced due to aging mechanisms
  • Static power side-channel attacks require more traces to succeed
  • The data dependency of combinatorial circuits changes completely
  • Static power results taken from different phases of measurements do not correspond

to each other

  • Especially relevant when conducting attacks at increased temperatures and supply

voltages, as it fuels device degradation significantly

  • Future static power experiments should state the age of devices at all stages

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 31

slide-50
SLIDE 50

Thanks for your attention. Any questions?

Naghmeh Karimi, Thorben Moos and Amir Moradi | Exploring the Effect of Device Aging on Static Power Analysis Attacks | 28 August 2019 | CHES 2019 | Atlanta 32