Explicit Expressions for Solar Panel Equivalent Circuit Parameters Based on Analytical Formulation and the Lambert W-Function Javier Cubas Santiago Pindado Carlos de Manuel 1
To obtain better performance I is necessary to optimize electric systems. Introduction Modeling a system to reproduce different situations is a useful tool for optimization. Modeling Photovoltaic systems are a photovoltaic very variable energy source (Temperature, irradiance,...). systems Most common way of modeling of solar cells/panels is to calculate equivalent circuit. 2
II Easy and realistic way of simulate the solar cell Solar Cell behavior Modeling I (A) V (V) Current source One diode One series resistance One shunt resistance 3
One diode model Equation I , current I pv , constant current V , voltage I 0 , sat. current of diode n , number of cells a, ideality factor of diode V T , termal voltage R s , series resistance R sh , shunt resistance 4
I-V Curve and characteristic points Example of the current-voltage curve of a typical solar panel. I (A) Solar cell IV behaviour I mp ; V mp I sc Short circuit point I = I sc ; V = 0 Open circuit point I = 0; V = V oc Maximum power V point oc I = I mp ; V = V mp V (V) 5
Exampe of Data included in manufacturer datasheet Manufacturer information (AM1.5g; 25ºC) MSP290AS-36.EU MSMD290AS-36.EU (monocrystaline) (multicrystalline) 72 25 72 25 n n T r (ºC) T r (ºC) 290 -0.45 -0.44 P mp (W) P mp (W) γ (%/ºC) 290 γ (%/ºC) 7.82 - - I mp (A) I mp (A) α I mp (%/ºC) 7.70 α I mp (%/ºC) 37.08 -0.35 -0.35 V mp (V) V mp (V) β V mp (%/ºC) 37.66 β V mp (%/ºC) 8.37 +0.04 +0.04 I sc (A) I sc (A) α I sc (%/ºC) 8.24 α I sc (%/ºC) 44.32 -0.33 -0.31 V V β V 44.68 β V oc (V) oc (V) oc (mV/ºC) oc (mV/ºC) Objetive: Design an equivalent circuit that meets all that specification 6
Main disadvantage of III equivalent circuit models is the determination of Parameter the parameters Calculation Dependent of external conditions Temperature Illumination I pv , constant current … I 0 , sat. current of diode Available information Experimental data a, ideality factor of diode Many I-V curve points R s , series resistance Manufacturer data Characteristic points R sh , shunt resistance Numerical Analytical 7
Manufacturer data 4 Equations from 5 param. boundary conditions One has to be Short circuit estimated, a is the I R I R 0 exp 1 sc s sc s I I I most delimited sc pv aV R T sh a ∈ 1, 1.5 Open circuit V V 0 exp 1 a = 1.1 oc oc I I 0 pv aV R T sh R s Maximum power point [ I mp ; V mp ] R sh V I R V I R 0 exp mp mp s 1 mp mp s I I I mp pv aV R T sh I 0 Maximum power at [ I mp ; V mp ] I pv P I 0 V I V V 8
New analytical method The use of a new analytical method is proposed. New methodology, first analytical model that only uses manufacturer data. Using Lambert-W function explicit ecuations for the parameters of the equivalent circuit are achieved. The method calculates parameters analytically only from manufacturer data. Non-iterative Accurate Straight forward 9
Solving sequence a 1 Estimate a 2 2 2 V I I V I V I V I V I V V V V V V aV 2 mp mp sc mp sc oc mp mp sc oc mp exp mp oc mp oc mp oc T R W 1 s I aV aV aV V I V I I V I V I I V I V I I mp T T T mp sc oc mp sc mp sc oc mp sc mp sc oc mp sc a, R s V I R V R I I aV mp mp s mp s sc mp T 3 R sh V I R I I aV I mp mp s sc mp T mp a, R s , R sh R R I V 4 sh s sc oc I 0 V exp oc Parameters R sh aV T a, R s , R sh , I 0 , I pv R R 5 sh s I I pv sc R sh 10
MSP290AS-36.EU (multicrystalline) MSP290AS-36.EU EQUIVALENT CIRCUIT (multicrystalline) PARAMETERS 1.10 a n 72 8.37 A I pv.Tr P mp (W) 290 PM 0.162 Ω R s,Tr I mp (A) 7.82 331 Ω R sh,Tr V mp (V) 37.08 2.86 × 10 -9 A I sc (A) 8.37 I 0, Tr V 44.32 oc (V) solar panels equivalent circuits at STC (1000W/m² irradiance, 25˚C cell temperature, AM1.5g spectrum 11
MSMD290AS-36.EU (monocrystaline) MSMD290AS-36.EU EQUIVALENT CIRCUIT (monocrystaline) PARAMETERS 1.10 a n 72 8.24 A I pv.Tr P mp (W) 290 PM 0.130 Ω R s,Tr I mp (A) 7.70 316 Ω R sh,Tr V mp (V) 37.66 2.36 × 10 -9 A I sc (A) 8.24 I 0, Tr V 44.68 oc (V) solar panels equivalent circuits at STC (1000W/m² irradiance, 25˚C cell temperature, AM1.5g spectrum 12
I-V behaviour of the solar IV cell depends on temperature. Dependence Thus parameters of on equivalent circuit depends on temperature. temperature There are methods that relates parameters with temperature, but… We are going to take advantage of the ease of the method to directly calculate the variation of the parameters from manufacturer datasheet 13
Characteristic points T dependence Recalculate characteristic points for temperature T according to manufacturer data. ( ) ( ) I T T V T T 1 1 sc r oc r I I V V , , , , sc T sc T 100 oc T oc T 100 r r ( ) ( ) I T T V T T 1 m p r 1 m p r I I V V , , , , m p T m p T 100 m p T m p T 100 r r For the new characteristic points repeat solving sequence. Do for the entire interval of T . 14
Characteristic points T dependence MSP290AS-36.EU R s (multycrystaline) 3 6 2 8 3 ( ) 8.37 3.62 10 3.38 10 7.58 10 , I T T T T pv 1 3 7 2 8 3 ( ) 1.62 10 3.21 10 7.05 10 3.01 10 , R T T T T s 3 4 6 2 8 3 ( ) 1/ (3.03 10 2.65 10 1.50 10 1.56 10 ), R T T T T sh R sh 1 1 4 2 6 3 ( ) exp( 1.97 10 1.44 10 4.8 0 10 1.15 10 ). I T T T T 0 MSMD290AS-36.EU (monocrystaline) I 0 3 6 2 8 3 ( ) 8.24 3.49 10 1.68 10 2.41 10 , I T T T T pv 1 3 6 2 8 3 ( ) 1.30 10 1.97 10 2.53 10 1.07 10 , R T T T T s 3 4 6 2 8 3 ( ) 1/ (3.18 10 2.33 10 1.27 10 1.33 10 ), R T T T T sh 1 1 4 2 6 3 ( ) exp( 1.98 10 1.41 10 4.69 10 1.13 10 ). I T T T T I pv 0 15
I-V behaviour of the solar V cell depends on irradiation Dependence Manufacturer data for this solar cell is referred to on AM1,5g ( G r = 1000 W/m 2 ) irradiation Experimental behaviour with irradiation G I sc varies lineally with G V oc varies logarithmic with G R s is constant with G Parameter behaviour I pv,G = I pv,Gr G / G r I 0 , R s , R sh and a non dependent of G 16
Summarizing MSP290AS-36.EU Eq. circuit parameters MSP290AS-36.EU n expresions have been 72 T r (ºC) 25 calculated taking in account P mp (W) 290 γ (%/ºC) -0.45 Manufacturer experimental I mp (A) 7.82 α I mp (%/ºC) - data for temperature V mp (V) 37.08 β V mp (%/ºC) -0.35 dependance I sc (A) 8.37 α I sc (%/ºC) +0.04 Dependance with irradiation V 44.32 β V -0.33 oc (V) oc (mV/ºC) G a: a 1.1 R s : 1 3 7 2 8 3 ( ) 1.62 10 3.21 10 7.05 10 3.01 10 , R T T T T s R sh : 3 4 6 2 8 3 ( ) 1/ (3.03 10 2.65 10 1.50 10 1.56 10 ), R T T T T sh 1 1 4 2 6 3 I 0 : 0 ( ) exp( 1.97 10 1.44 10 4.80 10 1.15 10 ), I T T T T G I pv : 3 6 2 8 3 ( ) 8.37 3.62 10 3.38 10 7.58 10 . I T T T T pv G 17 r
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