DOE Big Idea concept Chief Engineer proposed by DOE Labs Advanced - PowerPoint PPT Presentation

Dev Shenoy DOE “Big Idea” concept Chief Engineer proposed by DOE Labs Advanced Manufacturing Office www.manufacturing.energy.gov March 06, 2017 NICE Workshop at IBM Research-Almaden 1 | Energy Efficiency and Renewable Energy eere.energy.gov

IT challenge for future electricity supply Do Nothing Energy ~ 100Pj/op 10000 New Moore scaling 8000 In 20 yrs Energy = 20fj/op TWHr IT=30-40% growth 6000 Projection based on consumer electronics 4000 + data centers New Moore scaling in 10 yrs 2000 Energy = 20fj/op IT=hold to 8% 0 2000 2005 2010 2015 2020 2025 2030 Year www.alliancetrustinvestments.com/sri-hub/posts/Energy-efficient-data-centres www.iea.org/publications/freepublications/publication/gigawatts2009.pdf

Bey eyond M nd Moore Co-des design F n Framework 10,000x improvement: 20 fJ per instruction equivalent Experimental Modeling Algorithms and Software Environments Algorithms & SW Environments Application Performance Modeling • Computer System Architecture Modeling • Next generation of Structural Simulation Toolkit • Heterogeneous systems HPC models On Chip Universal Memory: • Stacked ReRAM Component Fabrication • Petabit cm -2 Densities Microarchitecture Models • Replaces DRAM & flash Hardware & Circuit On Chip Memristor Accelerator: • <1 pJ per write/read • Vector or matrix operations Processors, ASICs On Chip Photonics • • fJs per operation • Chip to chip communication • McPAT, CACTI, NVSIM, gem5 • <1 pJ per bit transfer Architectures • Photonics To next node • Memory Silicon High Performance Logic: • TFET, NcgFET x 2 ... w 1,1 w 1,2 w 2,x x 2 Circuit/IP Block Design and Modeling Test Circuit Fab and Measurement ... w 2,1 w 2,2 w 2,x x 2 ... w 3,1 w 3,2 w 3,x x 2 • SPICE/Xyce model • Subcircuit measurement w 4,1 w 4,2 w 4,x ... Compact Device Models Device Measurements Computation Devices Comm., Memory & • Single device electrical models • Single device electrical behavior • Variability and corner models • Parametric variability Device Physics Modeling Device Structure Integration and • Device physics modeling (TCAD) - - - - - Demonstration - - + + + + + + + + + • Electron transport, ion transport V TE + + + + + + + + + - Novel device structure - - • - - - Magnetic properties • Ta TaO x Pt demonstration Process Module Modeling Process Module Demonstrations • Diffusion, etch, implant • EUV and novel lithography Simulation • • Diffusion, etch, implant simulation Materials • EUV and novel lithography models Atomistic and Ab-Initio Modeling Fundamental Materials Science Example activities • DFT – VASP, Socorro • Understanding Properties/Defects via • MD – LAMMPS within a MCF Electron, Photon, & Scanning Probes • Novel Materials Synthesis

Industry-Academia-Government Partnership Microelectronics: 1) Beyond von-Neumann architectures 2) Clear industry value proposition 3) Strong Partnerships 4) Ability to address critical challenges 5) A balanced portfolio of projects Open Consortium—new members able to join 4