Ramped Voltage Test for MIM Capacitors in Wide Range of Ramp Rates Boris Revzin, Yaron Knafo 1 Ramped Voltage Test for MIM Capacitors in Wide Range ... Introduction Gal-El applied approach presented by TriQuint Semiconductor for in-line monitoring of MIM capacitors: “ Reliability Studies on Thin Metal-Insulator-Metal (MIM) Capacitors ” Dorothy June M. Hamada and William J. Roesch TriQuint Semiconductor, ROCS 2008 2 Ramped Voltage Test for MIM Capacitors in Wide Range ...
Measurement Details • The vehicle was 300 m x 300 m MIM capacitor having SiN of 200 nm thickness. 154 units participated in each ramp. • Starting ramp rates were 2.5 – 50 V/s with voltage step size 0.25V. • Measurements had been performed by Keithley 2602 SMU controlled by internally developed software. • Two types of SiN had been tested A and B. Breakdown voltage had been defined at 10 mA/cm 2 leakage current. This definition worked well for A type of SiN, while B type had significantly lower leakage current at hardware limiting voltage 190V. Therefore lower leakage current for breakdown definition and censored data sets for median breakdown voltage calculations were used. 3 Ramped Voltage Test for MIM Capacitors in Wide Range ... Typical Result for 3 Ramp Rates 𝑆 1 𝑆 2 Typical relation between ramp rates: D V 12 > D V 23 while = , and acceleration 𝑆 2 𝑆 3 factor calculated g 12 ≠ g 23 ≠ g 13. 4 Ramped Voltage Test for MIM Capacitors in Wide Range ...
Results: SiN type A Linear fit for median breakdown voltages for A type SiN Breakdown is defined at leakage current 10 mA/cm 2 . Measurements performed at 1, 2.5, 5, 10, 40, and 160 V/s ramp rates. Correlation is greater than 0.99. 5 Ramped Voltage Test for MIM Capacitors in Wide Range ... Results: SiN type B Linear fit for median breakdown voltages for B type SiN. Example of censored data. Wafer W17, 2 V/s. Breakdown is defined at leakage currents 20, 70, and 100 µA/cm 2 for the wafers W16, W18, and W17 respectively. 6 Ramped Voltage Test for MIM Capacitors in Wide Range ...
TriQuint Data Set Fitting to TriQuint ramped voltage test data. SiN thickness is 50 nm. 7 Ramped Voltage Test for MIM Capacitors in Wide Range ... Conclusions • Linear dependence of median breakdown voltage on logarithm of ramp rate had been observed for SiN of different quality and moreover for different manufacturers and thicknesses indicating that this is a common behavior. • Linear region provides a technique for ramped voltage testing optimization by avoiding time consuming measurements at low ramp rates and also provides extrapolation to very low ramp rates unacceptable for practical applications. Ramped Voltage Test for MIM Capacitors in Wide Range ... 8
Acknowledgements Alon Soloshansky F or support of all measurements including equipment and software. Gal-El management For permission to publish these results. Ramped Voltage Test for MIM Capacitors in Wide Range ... 9 Thank you! Ramped Voltage Test for MIM Capacitors in Wide Range ... 10
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