Best practice on S&T parks The Grenoble area Impact on large - PowerPoint PPT Presentation

Best practice on S&T parks The Grenoble area Impact on large scale RIs Amal CHABLI 2007 2007  F. Bertin, P. Bleuet, P. Gergaud, S. Maitrejean, E. Martinez, O. Renault  amal.chabli@cea.fr ERF Workshop Hamburg, May 31 – June 1, 2012 1

OUTLINE  Introduction  Grenoble eco-system and Large-scale facilities  Highlights of industrial R&D technological cases  Technical limitations & mitigations  Operational limitations & related initiatives 2007 2007 How to leverage for industry the outcomes of basic research performed in RIs? ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 2

From usages to micro- and nano-technologies Integrated devices Nanomaterials 2007 2007 Health Health Energy Energy Communication Communication ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 3

GIANT Campus www.giant-grenoble.org  Applied technologies  Transverse competencies  Co-located industries 2007 2007 30 000 workers 30 000 workers 40 companies 40 companies ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 4

Education MINATEC innovation campus Research Industry Transfer of MNT Transfer of MNT from research from research to industry to industry 2007 2007 300 mm www.minatec.com 4000 actors 4000 actors 10 000 m 2 10 000 m 2 300 patents 300 patents 200 mm 1200 publications 1200 publications ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 5

Focus on characterization  Serving  Serving  Comprehensive expertise Electron Microscopy  Choice and improvement of materials  Choice and improvement of materials  Ion Beam Analysis   Analysis of scaling effects and correction or use  Analysis of scaling effects and correction or use Nuclear Magnetic Resonance   Design of integration processes and validation  Design of integration processes and validation Mechanical Tests  Optical Techniques  Sample Preparation  40 tools Scanning Probe Microscopy  80 researchers Surface Analysis  Trace & Contamination Analysis  Experts X ray Analysis  Clean Room Metrology   Material science  Technological research  Multidisciplinary skills  Tool suppliers Biotechnology 2007 2007  Material Science  Micro & Nano systems  Nanoelectronics  Nanotoxicology  Complementarily to the large-scale facilities Photovoltaic  like ESRF & ILL Optoelectronics  – –     – – – – ) )   – – ) ) – – – – – – – –   – – – – ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 6

Large-scale facilities used for MNT Micro- & nano-technologies Micro- & nano-technologies Key access figures Key access figures 2006-2011 2006-2011 BESSY II  Annual proposal number  Annual proposal number 15-20 15-20 SOLEIL ELLETRA  Allocated shifts per year  Allocated shifts per year ~ 100 ~ 100 ESRF  Accepted proposals  Accepted proposals ILL 30% 30%  Beam time purchase (occasional)  Beam time purchase (occasional) Hachette  Brilliance  Brilliance 2007 2007  High flux  High flux  High stability  High stability  Spectroscopy  Spectroscopy  Multimode analysis  Multimode analysis  Tunable excitation  Tunable excitation  Pulsed excitation  Pulsed excitation  In depth analysis  In depth analysis ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 7

Micro- & Nano-technologies covered areas SR X-ray & neutrons PC-RAM Top electrode Top electrode Top electrode Top electrode  Energy storage  Energy storage PCM PCM PCM PCM  Diffraction  Diffraction  Photovoltaïcs  Photovoltaïcs  Spectroscopy  Spectroscopy Heater Heater Heater Heater  MEMS-NEMS on Si  MEMS-NEMS on Si  Fluorescence  Fluorescence  Biotechnologies on Si  Biotechnologies on Si  Absorption  Absorption Bottom electrode Bottom electrode Bottom electrode Bottom electrode  Diffusion  Diffusion  Photonics on Si  Photonics on Si  Photoelectron  Photoelectron  Non Volatile Memories  Non Volatile Memories  Reflection  Reflection  CMOS integration technologies  CMOS integration technologies  Imaging  Imaging  Tomography  Tomography 2007 2007  Local chemical composition  Local chemical composition  ….  ….  Local chemical bonding  Local chemical bonding R-RAM  Local crystalline structure  Local crystalline structure  Nanoscale morphology  Nanoscale morphology  Interface properties  Interface properties  …  … ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 8

CMOS integration technology Issues addressed with large-scale facilities Cu interconnections  Cu polycrystalline  Cu polycrystalline Transmission Electron properties properties Microscopy  Cu strain & stress  Cu strain & stress  Lwk material porosity  Lwk material porosity  Inter-diffusion  Inter-diffusion  Stability  Stability CMOS transistor  Crystallography  Crystallography  Composition  Composition 2007 2007  Chemical bonds  Chemical bonds  Dopant site &  Dopant site & coordination coordination  Inter-diffusion  Inter-diffusion  Interface properties  Interface properties  Stability  Stability 20 nm 20 nm 20 nm ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 9

HAXPS for CMOS gate stacks integration control Inter-diffusion control Metal Gate and High k dielectric for electrical characteristics monitoring for power consumption reduction Si 1 s Si 1 s ESRF HAXPES HAXPES h  = 3.81 keV h  = 3.81 keV   TiN ID32 La-O-Si La-O-Si XPS Intensity (a.u) XPS Intensity (a.u) XPS Intensity (a.u) XPS Intensity (a.u) LaO x Si-Si Si-Si Si-Si Si 3+ , Hf-O-Si Si 3+ , Hf-O-Si Without HfSi x 0 y Si-N Si-N SiO 2 annealing SiO 2 SiO 2 Si 1+ Si 1+ Si 1846 1846 1844 1844 1842 1842 1840 1840 1838 1838 1836 1836 Diffusion of La Binding Energy (eV) Binding Energy (eV) Si 1 s Si 1 s TiN   h  = 3.81 keV h  = 3.81 keV 2007 2007 HfSi x 0 y XPS Intensity (a.u) XPS Intensity (a.u) Si Si SiLa x O y After annealing Si 1846 1846 1844 1844 1842 1842 1840 1840 1838 1838 1836 1836 Hard x-ray: analysis of full stack Binding Energy (eV) Binding Energy (eV) R. Boujamaa et al. JAP 111, 054110 (2012) Si 1s: not observable with lab source ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 10

EXAFS for dopants activation and coordination Trends towards high level doping of the transistor channel ESRF ESRF EXAFS EXAFS ID32 ID32 G. Servanton. PhD research, Grenoble (2010) As cluster formation 2007 2007 As Si Ge Opposite results to the objectives ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 11

GISAXS for integration of Cu interconnections Porous materials for dielectric isolation of Cu interconnections GISAXS GISAXS Cu Cu Pores Line 2 ULk Line 2 ULk  Size & shape Via 1 ULk Via 1 ULk  Density  Stability during process Line 1 ULk Line 1 ULk Selection of the ULK material and integration process optimization for production of the 65-nm node and below 2007 2007 ESRF ESRF BM32 BM32 V. Jousseaume el al., Appl. Surf. Science, 254 (2007) 473 ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 12

TSV for 3D integration of IC’s Non destructive detection of voids Cu TSV Cu TSV Thin Si~15µm Thin Si~15µm ØTSV~3µm ØTSV~3µm Si Si Direct Direct Bonding Bonding Thin Si~15µm Thin Si~15µm ØTSV~3µm ØTSV~3µm 5  m 5  m Rebuilt die- Rebuilt die- Metal1 Metal1 on-wafer on-wafer Cu Cu Void Void X-ray tomography X-ray tomography 2007 2007 ESRF ESRF ID22 ID22 20  m Cu Voids Voids P. Bleuet el al., Rev. Sci. Inst., 80, 056101-3 (2009) 5  m 5  m 5  m Up-grade of beam lines towards 10-nm spatial resolution ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 13

A number of other MNT experiments White beam µDiff: Cu interconnect lines BM32 P. Gergaud et al., AIP Conf. Proc. 817, p. 205 (2006) HAXPES: CMOS gate stacks E. Martinez et al., J. of Vac. Sci. & Technol. B 25, 86 (2007) ID32 J. Rubio-Zuazo et al., AIP Conf. Proc. 931, p. 329 (2007) C. Gaumer et al., AIP Conf. Proc. 1173, p. 40 (2009) D17 Neutron reflectometry: Low k dielectric for Cu interconnects D. Rebiscoul et al., Microelectronic Eng ., 85, p. 2089 (2008) Soft x-ray XPS: CMOS Gate dielectric TEMPO L. Q. Zhuet al., J. of Appl. Phys. 105, 024102 (2009) 2007 2007 X-ray total scattering: Doping of GeTe for PC-RAM CRYSTAL G.E. Ghezzi et al., Appl. Phys. Lett., 99 151906 (2011) Large-scale RIs are Large-scale RIs are EXAFS: HgCdTe for IR detectors key component key component BM29 P. Ballet et al., J. Electron. Mater. 38, p. 1726 (2009) in the innovation cycle in the innovation cycle and industrial R&D and industrial R&D EXAFS: GeSbTe for PC-RAM X. Biquard et al., Appl. Phys. Lett. 98, 231907 (2011). BL01B1 ERF Workshop, Hamburg, May 31 – June 1, 2012 Amal Chabli 14