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4nterconnect !assan Wassel 6 7 Mohit !iwari 6 7 9onathan :alamehr ; 7 - PowerPoint PPT Presentation

Jan 22, 2024 •584 likes •789 views

!owards Chip-scale 1lasmonic 4nterconnect !assan Wassel 6 7 Mohit !iwari 6 7 9onathan :alamehr ; 7 <u>e !heogara@an ; 7 9enniAer Bionne C 7 Drederic Chong 6 and !imothy Sherwood 6 6 Computer Science G HC Santa Iarbara ; Klectrical and

  1. !owards Chip-scale 1lasmonic 4nterconnect !assan Wassel 6 7 Mohit !iwari 6 7 9onathan :alamehr ; 7 <u>e !heogara@an ; 7 9enniAer Bionne C 7 Drederic Chong 6 and !imothy Sherwood 6 6 Computer Science G HC Santa Iarbara ; Klectrical and Computer Kngineering G HC Santa Iarbara C Materials Science and Kngineering G StanAord

  2. ! Motivation ! 4ntroduction to 1lasmonics Nhy 1lasmonicsO ! 1ower Models and Mesults ! Conclusion ! 1hotonics is able to provide " Pigh bandwidth via NBM " <ow latency Qno latching or buAAeringR " Bistance-independent energy consumption ! Powever7 ! 1hotonic component siSes are limited by the diAAraction limitT Passan Nassel N4UBS VWXW X

  3. ! Motivation ! 4ntroduction to 1lasmonics BiAAraction limit ! 1ower Models and Mesults ! Conclusion ! <ight cannot be conAined in spaces less than l W YVn where l W is the Aree-space wavelength and n is the reAractive indeZ oA the materialT ! Micrometer siSed components lead to high capacitances which limits bandwidth and increases latency and power consumption Qbest >nown is [W A9YbitR\V] 4mages are ta>en Arom \X]T \X] ^ramotnev !t#$%&#' 1lasmonics (!)*n,#t-!#,i//0$1ti*n#%i2it&3# !"#$%&'()*#*+,-. 7 volT _7 9an VWXWT \V] Meed !t#$%&#'4i%i1*n#*5ti1$%#2*,u%$t*0s&3# !"#$%&'()*#*+,-. 7 volT _7 9ulT VWXWT Passan Nassel N4UBS VWXW V

  4. ! Motivation ! 4ntroduction to 1lasmonics <ength vsT Knergy 1er Iit ! 1ower Models and Mesults ! Conclusion bWW Can plasmonics reduce the minimum distance at which aWW photonic lin>s are energy eAAicientO )nergy per bit 1f34 [WW _WW `WW Klectrical 1hotonic VWW XWW W W XWWW VWWW `WWW _WWW [WWW aWWW 5in6 length 1 !" 4 Klectrical results are obtained using Orion VTW Aor `V nm Q<:!RG ` ^PS with : dd d X :T 1hotonic lin> is modeled using electrical components parameters Arom Iatten et al \PO!4 VWWe] and ring modulators \Kirman et al7 AS1<OS VWXW] Passan Nassel N4UBS VWXW `

  5. ! Motivation ! 4ntroduction to 1lasmonics Outline ! 1ower Models and Mesults ! Conclusion ! Motivation ! 1lasmonics ! SurAace 1lasmon 1olaritons ! Sources ! Naveguides ! Modulators ! Betectors ! CMOS Compatibility ! 1ower Models h Mesults ! Conclusions Passan Nassel N4UBS VWXW _

  6. ! Motivation ! 4ntroduction to 1lasmonics SurAace 1lasmon 1olaritons ! 1ower Models and Mesults ! Conclusion SurAace plasmon polaritons QS11R are electromagnetic waves that are coupled to Aree electron collective oscillations in a metalT " Maintains the Areiuency oA photonics at much shorter wavelength ! Ohmic losses limit the propagation distances 4ncident <ight Bielectric KM Aield S>in depth QVW nmR Metal Passan Nassel N4UBS VWXW [

  7. ! Motivation ! 4ntroduction to 1lasmonics S11 Source ! 1ower Models and Mesults ! Conclusion ! Klectrical eZcitation ! Uot mature QXa mN Aor Aew m m propagationR \X] ! Optical KZcitation ! On-chip ! Uanolaser has been demonstrated \V] ! OAA-chip laser source ! CN laser is coupled to plasmonics with coupling losses oA XTX dI per transitionT \X] Nalters etT al7 A silicon-based electrical source oA surAace plasmon polaritonsT Uature Materials7 jQXRkVX 8 V[7 Becember VWWjT \V] 9:;:#<i%%&#' Uanophotonics =#%$s!0s#>*#(!)*n,#,i//0$1ti*n#%i2it:&3# !"#$%&'+"+*#&-)+*/*01 7 volT _7 UovT VWWjT Passan Nassel N4UBS VWXW a

  8. ! Motivation ! 4ntroduction to 1lasmonics 1lasmonic Naveguides ! 1ower Models and Mesults ! Conclusion ! 4nsulator-metal-insulator Q4M4 or <M-S11R 4 M ! Dew cm range with similar 4 conAinement to photonic waveguides \X] ! Metal-insulator-metal QM4M or MBMR ! Dor eZample7 eW m m range is achieved when the core M thic>ness oA 4 M silverYsilicaYsilver waveguide is V[W nmT\V] Drom \X] \X] lia7 et al7 m^eometries and materials Aor subwavelength surAace plasmon modes7m 9T OptT SocT AmT A VX7 V__V-V__a QVWW_RT \V] Bionne et al7 � 1lasmon slot waveguidesk !owards chip-scale propagation with subwavelength-scale localiSation7 1hysical Meview I7 volT b`7 VWWaT Passan Nassel N4UBS VWXW b

  9. ! Motivation ! 4ntroduction to 1lasmonics 1assive Bevices ! 1ower Models and Mesults ! Conclusion Iends are loss-Aree Pigh eAAiciency !-splitter and n- in MBM plasmonic coupling Arom and Splitters has been waveguides \X] two photonic proposed \[Wo waveguides loss]T QXTX dI per transition \V]R \X] :eronis !t#$%&#'?!n,s#$n,#s5%itt!0s#in#2!t$% -dielectric-metal subwavelength plasmonic @$A!>ui,!s&3# 233/,&4'()1.,-.'5&##&%. 7 volT eb7 VWW[T \V] Belacour et al7 KAAicient Birectional Coupling between Silicon and Copper 1lasmonic Uanoslot B$A!>ui,!s=#t*@$0,#9!t$%CDEi,!C4i%i1*n# Uanophotonics7 !"+* 5&##&%. VWXW 67 QeR Passan Nassel N4UBS VWXW e

  10. ! Motivation ! 4ntroduction to 1lasmonics 1lasmonic Modulators ! 1ower Models and Mesults ! Conclusion ! 1lasMOStor \X] ! Compact Modulator\V] \X] Bionne et al7 1lasMOStork a metal-oZide-Si Aield eAAect plasmonic modulatorT7 Uano letters7 volT j7 DebT VWWjT \V] Cai !t#$%:&#'F*25$1t&#-i>- -speed and power-eAAicient electrooptic plasmonic 2*,u%$t*0s:&3# !"+*'/&##&%. 7 volT j7 BecT VWWjT Passan Nassel N4UBS VWXW j

  11. ! Motivation ! 4ntroduction to 1lasmonics 1lasmonic Modulators ! 1ower Models and Mesults ! Conclusion Modulator <hotonic >ing <lasMOStor ?1A Compact Modulator ?3A Modulator ?GA Knergy per bit QA9R [W aTe X 4nsertion loss QdIR ` XTX ` Modulation depth XV pXW p` QdIR <ength q Nidth XWWW VZV XZWT[ Q G2 q G2 R Dreiuency Q^PSR XX p _W p XWW Capacitance QADR [W X_ X Swing voltage Q:R V WTb X \X] Bionne et al7 1lasMOStork a metal-oZide-Si Aield eAAect plasmonic modulatorT7 Uano letters7 volT j7 DebT VWWjT \V] Cai !t#$%:&#'F*25$1t&#-i>- -speed and power-eAAicient electrooptic plasmonic 2*,u%$t*0s:&3# !"+*'/&##&%. 7 volT j7 BecT VWWjT \`] Bong et alT m<ow :pp7 ultralow-energy7 compact7 high-speed silicon electro-optic modulator7m OptT KZpress XbQVWWjRT Passan Nassel N4UBS VWXW XW

  12. ! Motivation ! 4ntroduction to 1lasmonics Betectors ! 1ower Models and Mesults ! Conclusion ! S11 can be detected using photo-detectorsT ! 1lasmonics has been used to enhance the eAAiciency oA photo- detector \X] ! 1lasmonics is being proposed to develop phototransistors7 leading to removal oA the !4AT HIJ#;$n>#!t#$%:#' Uanometre-scale germanium photodetector enhanced by a near- in/0$0!,#,i5*%!#$nt!nn$&3# !"#$%&'()*#*+,-. 7 volT V7 MarT VWWeT Passan Nassel N4UBS VWXW XX

  13. ! Motivation ! 4ntroduction to 1lasmonics CMOS Compatibility ! 1ower Models and Mesults ! Conclusion ! Iest plasmonic matels are gold and silverT Powever7 aluminum and copper are also good plasmonic materialsT ! !he dielectric can be silicon7 silicon oZide7 silicon nitride or airT Passan Nassel N4UBS VWXW XV

  14. ! Motivation ! 4ntroduction to 1lasmonics 1lasmonic <in> ! 1ower Models and Mesults ! Conclusion 1hotonic-to-plasmonic Coupler Metal Bielectric 1hoto-detector Modulator <ight Source Klectrical 1lasmonic-to-photon Coupler Signal Klectrical Modulator Meceiver Signal Briver Dront-end Passan Nassel N4UBS VWXW X`

  15. ! Motivation ! 4ntroduction to 1lasmonics 1lasmonic <in> 1ower Model ! 1ower Models and Mesults ! Conclusion ! Static power d Segments 6 AQcoupler loss7 propagation loss7 modulator insertion lossR ! Bynamic power d Segments 6 activity Aactor6 K1I 6 Iandwidth ! Coupler loss d XTX dIY transition 1ropagation loss d WTV dIY m m ! 1lasmonic MBM Naveguides Memory Memory SerialiSer Cloc> Mecovery 1hotonic hBeserialiSer waveguide carrying Modulator driver light Meceiver Aront-end Passan Nassel N4UBS VWXW X_

  16. ! Motivation ! 4ntroduction to 1lasmonics Mesults ! 1ower Models and Mesults ! Conclusion XWWWWW XWWWW )nergy per bit 1f3/bit4 XWWW Klectrical XWW 1hotonic 1lasmonic XW X W XWWW VWWW `WWW _WWW [WWW aWWW 5in6 length 1 !" 4 Passan Nassel N4UBS VWXW X[

  17. ! Motivation ! 4ntroduction to 1lasmonics Pybrid <in> 1ower Model ! 1ower Models and Mesults ! Conclusion ! Static power d AQcoupler loss7 propagation loss7 modulator insertion lossR ! Bynamic power d activity Aactor 6 K1I 6 Iandwidth ! Coupler loss d XTX dIY transition ! 1ropagation loss d WTX dIYmm 1lasmonic-to-photon Coupler 1hotonic-to-plasmonic Coupler 1hoto-detector 1lasmonic Modulator <ight Silicon 1hotonic Source waveguide Klectrical Modulator Meceiver Klectrical Signal Briver Dront-end Signal Passan Nassel N4UBS VWXW Xa

  18. ! Motivation ! 4ntroduction to 1lasmonics NBM Pybrid <in> ! 1ower Models and Mesults ! Conclusion Passan Nassel N4UBS VWXW Xb

  19. ! Motivation ! 4ntroduction to 1lasmonics Mesults ! 1ower Models and Mesults ! Conclusion bWW aWW )nergy per bit 1f3/bit4 [WW _WW Klectrical `WW 1hotonic VWW Pybrid XWW W W XWWW VWWW `WWW _WWW [WWW aWWW 5in6 length 1 !" 4 Passan Nassel N4UBS VWXW Xe

  20. ! Motivation ! 4ntroduction to 1lasmonics Conclusions ! 1ower Models and Mesults ! Conclusion ! 1lasmonics cannot be used Aor wave guidingT ! 1lasmonics can improve the viability oA on- chip photonics7 via energy eAAicient detectors and modulatorsT ! 4t provides a potential oA reducing the minimum distance at which photonics is more energy eAAicient than electrical signalingT !han> your Passan Nassel N4UBS VWXW Xj

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