Sub-6GHz 5G TDD Wireless Infrastructure Block Diagram High Power - PowerPoint PPT Presentation

Sub-6GHz 5G

TDD Wireless Infrastructure Block Diagram High Power Switch - LNA MAIA-011002 MAIA-011004 MAMF-011069 High Power Switch MAMF-011070 MASW-000822 MAMF-011119 MASW-000825 MASW-000834 MASW-000932 MASW-000936 MASW-011120 2

Complete Portfolio of Sub-6GHz 5G High Power Switch and m-MIMO Switch – LNA Modules PIN Diode Switch - LNA Module Key Attributes: > High input power handling: up to 120W LTE for 5G Macro applications > Super low Tx insertion loss 120W MASW-011120, High Power Switch, 0.03-6 GHz > Low NF: 1.0dB @ 2.7 GHz Average Power > 5 mm QFN packages MAMF-011070, Switch-Bias module, 0.03-6 GHz 100W MAIA-011004, Switch-LNA module, 0.4-5 GHz 60W MAIA-011002, Switch-LNA module, 0.4-4 GHz MAMF-011069, Dual Switch-LNA, 1.8-3.9 GHz 20W MAMF-011119, Single Switch-LNA, 2.3-5.0 GHz SOI Switch - 10W LNA Module Key Attributes: > Single Channel architecture for 5G m-MIMO applications > Broadband: 2.3 – 5.0 GHz > 50 Ohm internally matched at both input & output > High power handling: 10-20W LTE > Low NF: 1.3dB typical > 6 mm QFN Packages 0.6 1.8 2.3 2.7 3.5 5.0 Frequency (GHz) 3

MAMF-011070 High Power Switch with Integrated Bias Control Functional Schematic > Features: • Broadband Performance: 0.03 – 6.0 GHz • Low Loss: Tx = 0.3 dB, Rx = 0.4 dB at 2.7 GHz • High Isolation: Rx = 43 dB at 2.7 GHz • Up to 125 W CW Power Handling at 85 ºC • Single +5 V DC supply • Compatible with 1.8 V and 3.3 V logic • Lead-Free 5 mm 20-Lead HQFN Package > Additional Information: • Export Compliance; ECCN EAR99 • Demo Boards Available 4

MAIA-011004 High Power Switch - LNA Module, 0.4 – 5.0 GHz NF Functional Schematic > Features: • 2-Stage LNA and High Power Switch • High RF Input Power: • 120 W CW @ +85°C, 2.0 GHz • 100 W CW @ +85°C, 2.7 GHz • Noise Figure: • 0.85 dB @ 2.0 GHz • 1.0 dB @ 2.7 GHz • Gain: • 37 dB @ 2.0 GHz • 34 dB @ 2.7 GHz OIP3 • OIP3: 36 dBm Gain • Lead-Free 5 mm 32-lead HQFN > Additional Information: • Export Compliance; ECCN EAR99 • Demo Boards Available 5

MAMF-011119 Single Channel Integrated Switch LNA Module, 2.3 – 5.0 GHz > Features: Functional Schematic Application Schematic • Broadband: 2.3 – 5.0 GHz • RX Mode: • Gain: 34 dB typ. • NF: 1.3 dB typ. • Input IP3: -4 dBm typ. • TX Mode: • IL: 0.4 dB typ. • P0.1dB: 40.5 dBm typ. • Single 5 V Supply • Integrated Control Circuitry with 1.8 V Logic • 50 Ohm Internally Matched Input & Output • Lead-Free 6x6 mm 20 Lead QFN Package > Additional Information: • Export Compliance; ECCN EAR99 6

mmWave 5G

5G Analog Beamforming Typical System Architecture DSA PA Switch Antenna Mixer VCO VVA LNA 8

MAAP-011246 2W, Power Amplifier, 27.5 - 31.5 GHz Functional Schematic > Features: OIP3 • Bias: 6V & Idq=900mA • Gain: 23dB • P SAT : 33dBm @ 6V & Id of 1600mA • P 1dB : 31dBm • OIP3: 37dBm • 50ohm in/out internally matched • 5x5mm 32-lead QFN > Additional Information: • Export Compliance; ECCN EAR99 Psat • Gain Demo Boards Available 9

MAAP-011250 4W, Power Amplifier, 27.5 - 30 GHz Functional Schematic OIP3 OIP3 > Features: V D2 V D1 V G C10 • R3 R4 R5 Bias: 6V & Idq=2300mA R1 C5 C3 C4 C1 • Gain: 24dB V G V D1 V D2 V D3 • P SAT : 36dBm @ 6V & Id=3300mA RF IN • P 1dB : 34.8dBm RF OUT • OIP3: 38dBm DET V G V D1 V D2 V D3 • PAE: 18% @ P SAT C11 C9 R6 C12 R2 R7 R8 • C6 50ohm in/out internally matched C2 C7 C8 V DET • Integrated Power Detector V G V D1 V D2 Gain • 5x5mm 32-lead QFN Psat Psat > Additional Information: • Export Compliance; ECCN EAR99 • Demo Boards Available 10

MASW-011098 13W CW, Ka-Band Reflective AlGaAs SPDT PIN Diode Switch, 26 – 40GHz Functional Diagram IL (Reverse Bias) > Features: GND B2 GND RFC B1 • IL RFC to RF 1 or 2 : 0.85dB @ 30GHz 20 19 18 17 16 N/C 15 N/C 1 • Isolation Off State: 29dB @ 30GHz C C • 14 GND 2 L GND CW Power On State of 13W at 85 °C, V R =-25V L • T on /T off : 30/21nsec @ 26.5GHz RF2 3 13 RF1 SW2 SW1 C C C C • T RISE /T FALL : 10/8 nsec @ 26.5GHz GND 4 12 GND • Integrated DC Block and RF Bias Networks N/C 5 11 N/C • Available in a Lead-Free 5x5 mm 20-Pin 6 7 8 9 10 Laminate Package N/C N/C N/C N/C N/C > Additional Information: Isolation: RF common to RFx IL • Export Compliance; ECCN EAR99 • Demo Boards Available 11

MAAL-011129 16dBm P1dB, Broadband Low Noise Amplifier, 18 – 31.5 GHz > Features: • Gain: 23 dB @ 24 GHz • Noise Figure: 2.5 dB @ 24 GHz • P1dB: 16 dBm @ 24 GHz • Output IP3: 25 dBm @ 24 GHz • V DD = 3 to 5 V • Power Down Capability • Available in a Lead-Free 2x2 mm 8-Pin PDFN Package • 50 Ohm Internally Matched Input & Output > Additional Information: • Export Compliance; ECCN EAR99 • Demo Boards Available 12

mmWave 5G T&M

MAAM-011238 Wideband Amplifier, 100 kHz – 50 GHz > Features: Functional Schematic • Gain: 14 dB @ 6 V, 30 GHz • P1dB: 17 dBm @ 6 V, 30 GHz • P3dB: 18.5 dBm @ 6V, 30 GHz • V DD = 4 - 6 V, I D = 125 - 150 mA • Integrated Power Detector • Package: 5mm 12L SMT • 50 Ohm Internally Matched Input & Output > Additional Information: • Export Compliance; ECCN 3A001.b.2.d • Demo Boards Available 14

MAAL-011141 Broadband Low Noise Amplifier, DC – 28 GHz > Features: • Gain: 17.5 dB @ 8 GHz • Noise Figure: 1.4 dB @ 8 GHz • P1dB: 16 dBm @ 8 GHz • Output IP3: 27.5 dBm @ 8 GHz • V DD = 5 to 10 V • Power Down Capability • Available as bare DIE and in a Lead-Free 5x5 mm 32-Pin AQFN Package • 50 Ohm Internally Matched Input & Output > Additional Information: • Export Compliance; ECCN EAR99 • Demo Boards Available 15

MAMX-011054 Broadband Double-Balanced Mixers, 18 - 46 GHz Production > Features: • Conversion Loss: 6.5 dB • Input IP3: 20 dBm • LO Power: 15 dBm • IF Bandwidth: DC – 20 GHz • High Isolation • Available as DIE and in a Lead-Free 3x3 mm 12- Pin PQFN Package • 50 Ohm Internally Matched > Additional Information: • Export Compliance; ECCN EAR99 • Demo Boards Available 16

MASW-011102 SPDT Non-Reflective Switch, DC – 30 GHz > Features: • Low Insertion Loss: 1.8 dB @ 30 GHz • High Isolation: 40 dB @ 30 GHz • Input P1dB: 24 dBm • Input IP3: 45 dBm • Available in a Lead-Free 3x3 mm 14-Pin PQFN Package • Fast Switching Speed > Additional Information: • Export Compliance; ECCN EAR99 • Demo Boards Available 17

AlGaAs PIN Diode Switches Reflective Frequency Insertion Isolation P1dB Bias Topology or Part Number Package Loss (dB) (dB) (dBm) (mA) (GHz) Absorptive 0.05 - 18 0.2 22 23 SPST Reflective 10 MA4AGSW1 DIE 18 – 50 0.3 46 SPST 10-50 1.2 30 23 Absorptive 10 MA4AGSW1A DIE 0.05 - 18 0.5 47 23 SP2T Reflective 10 MA4AGSW2 DIE 18 – 50 0.7 33 0.05 - 18 0.6 45 23 SP3T Reflective 10 MA4AGSW3 DIE 18 – 50 0.8 31 0.05 - 18 0.7 41 23 SP4T Reflective 10 MA4AGSW4 DIE 18 – 50 1.0 32 0.05 - 18 1.4 35 23 SP5T Reflective 10 MA4AGSW5 DIE 18 – 50 1.9 30 0.05 - 18 1.5 32 23 SP8T Reflective 10 MA4AGSW8-1 DIE 18 - 50 2.0 32 18