Investor Presentation May 2018
Weebit Nano AT A GLANCE Listed on the ASX in August 2016 Targeting the memory market which is estimated at > USD$100B R&D and HQ in Israel, R&D partnership with CEA-Leti, France Business & Tech partners – CEA-Leti France & Rice University, USA Developing next-gen solution based on Silicon Oxide (SiOx) ReRAM Patents Registered in the USA 1 2
SHARE INFORMATION SHAREHOLDING BREAKDOWN CAPITAL STRUCTURE 01 ASX Code: WBT 02 Share price: 6.6c 1 47.93% 7.57% 44.50% 03 Shares on issue: 1443m 1 04 Options: 150m 1&2 OTHER TOP 20 BOARD & 05 Market cap: A$95.2m 1 MANAGEMENT Excluding Board & Management 06 Cash: A$4.2m 3 1. As of 8 May 2018 2. Including performance shares 3. As of 31 March 2018 3 Confidential
LEADERSHIP TEAM CTO CFO CEO EXECUTIVE DIRECTOR CHAIRMAN Two decades in Extensive management PhD. in Applied Physics, Ex-Intel EVP 20 Years CPA experience Semiconductor engineering and sales experience focus on SiOx memories IEEE Fellow 45nm NOR Flash Senior Manager at CEO of Tower 38 years in the Led Intel into the Technology Development PWC Israel Semiconductor for 9 years Data Center semiconductor domain at Micron Active Board member of Brought to Market: Board member, Heavily involved in Was part of Automotive multiple companies in Centrino™ mobile Saifun Semiconductor Verisity and Jasper division at Intel TASE and NASDAQ technology (NROM Flash) acquisitions 4
NON-EXEC/ADVISORY TEAM DIRECTOR DIRECTOR DIRECTOR INVENTOR Chairman and major 15 years in Investment Banking Scientist of the Year 2013 Extensive management shareholder of Electro R&D magazine and financial experience Optics Systems (EOS) Founding member of Led the financial teams at a Inducted to the National Investec Bank Australia Chairman of number of publicly traded Academy of inventors Audio Pixels (AKP) international companies Founding General Partner, Feynman prize in Owns a wide variety of OurCrowd Strong experience in equity Nano science companies worldwide raisings for public companies 5
WEEBIT ReRAM TECHNOLOGY Next generation memory technology Faster and more efficient than flash memory On track to achieve 40nm 1Mb array by mid-2018 – comparable with current embedded memory technology Key differentiator: WBT uses silicon oxide – the most commonly used material in the semiconductor industry Silicon oxide enables lower cost and shorter time to market Confidential 6
RERAM VS. FLASH The parameters needed for the next generation memory solution are: Flash (3D-NAND) Weebit’s ReRAM Does not provide any speed Faster programming and read X Speed improvement for tomorrow’s needs operations No power improvement per bit, Energy efficient by low voltage and X Energy Efficiency consumes higher energy fast write Very challenging manufacturing Utilises standard material and Manufacturability X process machinery Provides increased capacity for the Density Scalability allows higher future density near future High error rate and limited Reliability X Significantly higher endurance endurance
EXPECTATIONS MET Feb 2018 Every committed milestone met 40nm 4Kbit Array results NOV 2017 ON TRACK 40nm working cells OCT 2017 to reach 40nm 1 Mb array 300nm 4Kbit Array MAY 2017 by mid-2018 Miniaturisation started NOVEMBER 2016 Successful Technology transfer to Leti SEPT 2016 Development kicked off at Leti 8
STEPS TOWARDS COMMERCIALISATION Q1 Q4 Q4 Mid > 2021 2019 2019 2020 2018 40nm 4Kb Array 1Mb Array Process IP revenues Production Fab 28nm/300mm demonstrated Demonstration Optimisation Integration Qualification Done 1Mb Wafers Baseline State of the Technology manufacturing improvement to art embedded transfer and IP and Basic achieve robust process qualification functionality Technology readiness parameters * Timeline refers to calendar year
ALLIANCE WITH CEA – LETI* A real partnership, with ideal mix of expertise, innovation and flexibility France-based research institute for electronics and information technologies Leti assists companies to bridge the gap between research and manufacturing FROM PROTOTYPES TO MANUFACTURING CUSTOMERS PRODUCTION ALLIANCES Intel, ST Microelectronics, Global Over 330 industrial partners foundries Proven international track record in moving from R&D to production INNOVATION HUB MEMORY EXPERTISE 60+ start-ups in semiconductor, Over 10 years of experience in memory architectures or software technology development NANOTECHNOLOGY COLLABORATION SPECIALIST Working on 40nm SiOx development State of the art industrial tools since September 2016 10 *LETI, A SUBSIDIARY OF FRANCE’S NUCLEAR AND RENEWABLE ENERGY COMMISSION COMMISSION. HTTP://WWW.LETI-CEA.COM/CEA-TECH/LETI/ENGLISH/PAGES/WELCOME.ASPX
MEMORY MARKET OVERVIEW Huge market experiencing exponential growth • Embedded memory market worth ~US$25B 1 • Flash produced by all fabs • • Flash memory market size ~US$35B Fabs can easily retool to produce ReRAM 2016 Embedded Memory Market 2016 Semiconductor memory market Market in 2016 - $24.6B 2% EEPROM/ROM/EPROM/Others 11% MCU SRAM 23% High Performance 2% NOR 1% SRAM CPU SRAM 43% 45% 21% 52% NAND Mobile MPU MCU NVM DRAM SRAM 1. Source: Yoal 2017 11
ReRAM: FORECAST FOR EXPONENTIAL GROWTH IN MARKET VALUE o Emerging memory technologies forecast for significant growth o ReRAM technology expected to be the fastest growing emerging memory technology with a CAGR of 119% o ReRAM forecast growth due to competitive cost/performance in both storage class memory and mass storage applications 12
ReRAM DENSITY WILL MATCH FLASH Highest capacity memory chips best address Storage Class Memory = Flash Gb = Giga-bit, i.e. billions of bits 13
NEUROMORPHIC COMPUTATION ReRAM well positioned for significant growth in Artificial Intelligence o ReRAM’s operation mimics the biological computation at the synaptic level o Physical similarities lead to functional similarities o Combines memory and processing units using synapse and neuron like cells o ReRAM for AI is significantly more energy efficient than today’s data centres, and significantly smaller o ReRAM is therefore very well placed to capitalise on the emergence of AI Ions migration leads to resistivity modulation capabilities ReRAM technology enables brain-inspired AI systems 14
ReRAM COMPETITIVE LANDSCAPE Speed to market is a significant competitive advantage Materials * Silicon Oxide Pr, Ca, Mn Silver Tellurium Memory 40nm 4Kb achieved Start work on 8Mb Array 512Kb Capacity Mb Array by mid-2018 Mb Array Retention 10Y > room temp No data 10Y @ 85 °C 40Y @ 125 °C Endurance 10 5 ** 10 3 10 6 10 5 Dimension 40nm 40nm 40nm 130nm Development <2 years 7 years 7 years >10 years time ** moving to 10 6 * Pr, Ce – rare earth Mn Ag, Ca – not fab friendly Based on public information 15
2018 PLANS TECHNICAL • Develop a 40nm Mbit array by mid-2018 o Addresses most needs of the embedded memory market • Improve endurance and retention to meet industry standards by end 2018 • Define a plan and be on the path to develop 28nm technology o Will open up new potential uses for WBT’s technology BUSINESS • Sign first cooperation agreement with a key industry player • Explore collaborations with other technologies that can complement WBT’s technology 16
DISCLAIMER This presentation contains certain statements that constitute forward-looking statements. Examples of such statements include, but are not limited to, statements regarding the design, scope, initiation, conduct and results of our research and development programs; our plans and objectives for future operations; and the potential benefits of our products and research technologies. In some cases, forward- looking statements can be identified by the use of terminology such as “may,” “will,” “expects,” “plans,” “anticipates,” “estimates,” “potential” or “continue” or the negative thereof or other comparable terminology. These statements involve a number of risks and uncertainties that could cause actual results and the timing of events to differ materially from those anticipated by these forward-looking statements. These risks and uncertainties include a variety of factors, some of which are beyond our control. All forward-looking statements and reasons why actual results may differ are based on information available to us when initially made, and we assume no obligation to update these forward-looking statements or reasons why actual results might differ or the information set forth herein. In addition, we do not make any representations or warranties, express or implied, with regard to the information included in this presentation of any other related document or information disclosed or furnished in connection thereto, including, without limitation, with respect to the accuracy, reliability, completeness or its sufficiency for any particular purpose. This information is proprietary and confidential of Weebit and is provided on a confidential basis and may not be disclosed or used without our prior written consent. You acknowledge that the disclosure and use of the information may be further prohibited under applicable securities or other laws. This presentation is made for informational purposes only and does not constitute an offer to sell any interest in Weebit not does it form the basis of any contract or agreement between the parties. 17
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