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A. Adraktas Acknowledgments: V. Senaj MKD meeting, 2 April 2015 2 - PowerPoint PPT Presentation

Technology MKD 3D field calculations Department MKD 3D field calculations A. Adraktas Acknowledgments: V. Senaj MKD meeting, 2 April 2015 2 April 2015 A.Adraktas 1 Technology MKD 3D field calculations Department 3D field calculations


  1. Technology MKD 3D field calculations Department MKD 3D field calculations A. Adraktas Acknowledgments: V. Senaj MKD meeting, 2 April 2015 2 April 2015 A.Adraktas 1

  2. Technology MKD 3D field calculations Department 3D field calculations for the existing GTO stack 2 April 2015 A.Adraktas 2

  3. Technology MKD 3D field calculations Department 3D field calculations for the existing GTO stack 2 April 2015 A.Adraktas 3

  4. Technology MKD 3D field calculations Department 3D field calculations for the existing GTO stack 2 April 2015 A.Adraktas 4

  5. Technology MKD 3D field calculations Department Calculation of inductance of model Based on previously existing models in opera 2d the inductance of the gto was calculated to L≈132nH 2 April 2015 A.Adraktas 5

  6. Technology MKD 3D field calculations Department Conclusions • According to the simulations high electric field is predicted near the surface of the araldite around the ground busbar where the discharges have benn observed. There is also a high field near the surface of the capacitor stack. Moving the ground busbar in a larger distance from the HV conductor will probably reduce the field significantly • The inductance prediction is based on a previously existing model. If we assume current density to be in a larger radius than before this would give us a lower inductance of the model(ongoing) 2 April 2015 A.Adraktas 6

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