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3-D integration with an intra-cortical electrode array. B.Dierickx 1 - PowerPoint PPT Presentation

Presented at PIXEL2018 10-14 December 2018 Academia Sinica Pixel array for Taipei 3-D integration with an intra-cortical electrode array. B.Dierickx 1 , P.Gao 1 , A.Babaiefishani 1 , S.Veijalainen 1 , W.Wang 1 , B.Luyssaert 1 , A.Khan 2 ,


  1. Presented at PIXEL2018 10-14 December 2018 Academia Sinica Pixel array for Taipei 3-D integration with an intra-cortical electrode array. B.Dierickx 1 , P.Gao 1 , A.Babaiefishani 1 , S.Veijalainen 1 , W.Wang 1 , B.Luyssaert 1 , A.Khan 2 , R.Edgington 2 , K.Sahasrabuddhe 2 , M.Angle 2 1 Caeleste, Mechelen, Belgium 2 Paradromics, San Jose, US

  2. Outline 1. Introduction, purpose  Direct extracellular neuron signal sensing  Our approach Brain 2. Pixel design & performance  Sense amplifier design Micro wire bundle  Measured performance ROIC 256x256 pixels 3. Future outlook PCB  In-pixel analog domain filtering ADC Data acquisition  Prototype results 2

  3. 1. Introduction: purpose Detecting neural events in the brain → by an array of microelectrodes connected to an array of voltage amplifiers → like a large channel count oscilloscope with 10µV 20kHz resolution 3

  4. Microwire Electrodes One microwire electrode can record spiking activity from several neurons. 4

  5. Recording from microwire electrodes Connecting microwires directly to a CMOS array allows for readout, digitization, and multiplexing. CMOS with Metal Contact Pads Polished bundle 5

  6. Press the bundles onto CMOS sensor Microwire bundle Bundle before Pressing Exposed wire core 100 mm 100 mm CMOS Sensor Flexible diaphragm w/ metal bond pads Bundle after Pressing (for alignment) 6

  7. Henry/Argo sensor array Parameters Specifications # of neural sensors 65,536 (256x256) Full frame readout up to 39,000 Each pixel contains a high-gain, AC- frames/s coupled, low-noise voltage amplifier on 32 analog outputs Input referred < 10 µV rms noise (100 Hz- 20 kHz) 100 – 800 V/V Voltage gain > 1 T Ω Input impedance Pixel pitch 50 mm 7

  8. Henry Top electrode to be hybridized to the microwire electrode 16 differential output buffers Column ampl, X-scanner 50µm 14.3mm Y scanner Pixel biasing Pixel array 15.8mm Column ampl, X-scanner 16 differential output buffers 8

  9. 2. Pixel design & performance → overall pixel topology → design for compactness & for low noise → sense amplifier → pixel layout → measured performance in the array 9

  10. Class-A amplifier with resistive self-biasing Optimized for 1/f noise: single PMOSFET input >1M Ω 2…4pF ~1pF output Rfeedback >1T Ω 1MegOhm 10

  11. Compact high value resistor 𝑆 = 1 𝑙𝑈 = 𝑕 𝑛 𝑟. 𝐽 𝐶𝐽𝐵𝑇 PRO • Compact: a diode-connected MOSFET + a = MOSFET bias current source • R=1/g m AC value hardly dependent on variability of the 1st MOSFET. Dependent on I BIAS the variability of the bias • Can make extremely high R e.g. 1T Ω for I BIAS =25fA. Needed to make very low RC time: 1T Ω *100fC=0.1s CON • Needs an exclusive DC path for the I BIAS • Only AC / small signal: << 100mV • Not very linear • Offset must be solved by AC coupling • 1/f noise 11

  12. Actual Class-A amplifier self-biasing with MOSFETs R>1T Ω input output - Gain = 10 - Rload = 1Mohm - LNA+LPF input referred noise reaches 10µV RMS 12

  13. Actual Henry pixel topology 3 X 1-st order Gm-C LPF Self biased class-A amplifiers Electrode Columnwire C1 C2 LPF A2 A1 Row select C3 V DD 3 X to column load/buffer I b2 Self biasing G m M2 M3 V CC C In M1 Out I b1 R load 13

  14. Henry pixel LNA1 LNA2 14

  15. Total pixel gain and BW 15

  16. PSD + input noise histogram 20𝑙𝐼𝑨 න 100𝐼𝑨 Frequency [Hz] 16

  17. Henry pixel noise input referred noise of one row of pixels 17

  18. 3. Future outlook → recognize pulse shapes by matched filters → design of programmable filters → measured performance of prototypes 18

  19. Data reduction == recognize these shapes Matched filter gain&phase Matched filter frequency “matched filters” Matched filter Approximated by a linear sum of 2nd order filters time time time time 19

  20. Pixel topology Lowpass Bandpass Principal component 1 Resonant Electrode --------------------------- Pixel outputs ------------------- Q, f, A comparator + Σ in tissue + time stamp - Lowpass weights reference Bandpass - Resonant Q, f, A Principal component 2 + Σ + Lowpass Sense Bandpass - S&H Resonant weights amplifier - Q, f, A 100x Principal component 3 S&H Lowpass + Bandpass Σ Resonant + Q, f, A - weights S&H - Lowpass Bandpass Resonant Q, f, A 20

  21. Programmable filters Filters • (resonant) bandpass filter • (resonant) lowpass filter • summator Based on “ideal” R+C active filters Actually I BIAS /g m + C implementations Continuous programmability of center/lowpass frequency, Q and gain, by programming I BIAS Patent WO 2018/191725 pending 21

  22. The OTA • All transistors are minimum sized, or larger for mismatch • Tail current can be adjusted between <1fA and >1µA • Gain = between 100x and 200x 22

  23. Resonant bandpass filter (ideal) Bandwidth = β Quality factor = ω 0 /β 23

  24. Actual implementation Pro: compact layout Pro: easy to implement, pure MOS Pro: input offset free Pro: programmable by current Con: one less degree of freedom (R2 absent): If Q must be large, the difference between the two currents becomes 10µm huge. If Q is too small, the center gain H0 becomes small as well. 24

  25. Sweeping both branch currents (simulation)  The two branch currents are adjusted to obtain the desired Q and resonant frequency  C=100fF 25

  26. BPF measurement vs simulation 25 Gain [dB] Monte Carlo vs measurement 23 19 Monte Carlo 21 17 Measurement 19 Peak gain [dB] 15 17 13 Pex Chip1 15 11 Chip2 Chip3 13 9 Chip4 Frequency [Hz] 11 7 400 800 1600 Frequency [Hz] 400 500 600 700 800 900 1000 26

  27. 2 nd order low-pass filter 5µm 27

  28. LPF measurement vs simulation 8 Gain [dB] 6 4 LPF: Monte Carlo vs Measurement 2 2.6 2.5 0 2.4 -2 2.3 Peak gain 2.2 -4 2.1 2 -6 1.9 -8 1.8 1.7 Frequency [Hz] -10 Peak frequency [Hz] 1.6 200 400 800 1600 600 700 800 900 1000 Simulation Chip1 Chip2 Chip3 Chip4 Monte Carlo Measurement 28

  29. Multi-input differential summator N1 N2 N3 - + P1 P2 P3  Pure MOSFET design  All transistors have minimum size (except when needed for matching)  Capacitors are 100fF MOS  Input stages are PMOSFET source followers  By adjusting the currents one can set the SF’s output impedance, hence the gain of each branch 29

  30. Summator layout 4 + inputs 4 - inputs 30

  31. 4 2 Summator: 0 simulation vs. -2 measurement Gain [dB] -4 Three different branches with different -6 gains 0dB, -4.5dB, -9dB -8 Measurement compared with simulation -10 Frequency -12 100 1000 10000 Meas_0dB Meas_-4.5dB Meas_-9dB Sim_0dB Sim_-4.5dB Sim_-9dB 31

  32. 4 Conclusions 32

  33. Conclusions • Unprecedented massive parallel 256x256, 50µm pitch neural probe ROIC • 10µV RMS @ 20kHz bandwidth • Compact, in-pixel analog domain filters demonstrated • Fully programmable • Key design issue: mismatch of MOSFETs causes variability of frequency, gain and Q 33

  34. Thank you! Projects sponsored by DARPA NESD Program Contract Number: N66001-17-4005 Grant Number: 1 R43 MH110287-01 PI: Angle 34 Co-PIs: Angle and Melosh

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